FR2158385A1 - - Google Patents

Info

Publication number
FR2158385A1
FR2158385A1 FR7238572A FR7238572A FR2158385A1 FR 2158385 A1 FR2158385 A1 FR 2158385A1 FR 7238572 A FR7238572 A FR 7238572A FR 7238572 A FR7238572 A FR 7238572A FR 2158385 A1 FR2158385 A1 FR 2158385A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7238572A
Other languages
French (fr)
Other versions
FR2158385B1 (en, 2012
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of FR2158385A1 publication Critical patent/FR2158385A1/fr
Application granted granted Critical
Publication of FR2158385B1 publication Critical patent/FR2158385B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/8311—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] the IGFETs characterised by having different channel structures
FR7238572A 1971-11-03 1972-10-31 Expired FR2158385B1 (en, 2012)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2154654A DE2154654C3 (de) 1971-11-03 1971-11-03 Spannungsteilerschaltungsanordnung und Verfahren zu deren Herstellung

Publications (2)

Publication Number Publication Date
FR2158385A1 true FR2158385A1 (en, 2012) 1973-06-15
FR2158385B1 FR2158385B1 (en, 2012) 1977-12-23

Family

ID=5824100

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7238572A Expired FR2158385B1 (en, 2012) 1971-11-03 1972-10-31

Country Status (5)

Country Link
DE (1) DE2154654C3 (en, 2012)
FR (1) FR2158385B1 (en, 2012)
GB (1) GB1351088A (en, 2012)
IT (1) IT970159B (en, 2012)
NL (1) NL7214912A (en, 2012)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2838310C2 (de) * 1978-09-01 1983-12-01 Siemens AG, 1000 Berlin und 8000 München Schaltungsanordnung zur Umsetzung von Digital-Signalen, insbesondere PCM- Signalen, in diesen entsprechende Analog- Signale, mit einem R-2R-Kettennetzwerk
DE3027456C2 (de) * 1980-07-19 1984-11-15 Telefunken electronic GmbH, 7100 Heilbronn Integrierte Halbleiterschaltung mit einer Stromquelle aus einem Verarmungs-IG-FET

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1563879A (en, 2012) * 1968-02-09 1969-04-18

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1054513A (en, 2012) * 1963-03-21 1900-01-01
DE1921131C3 (de) * 1969-04-25 1979-01-18 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Anordnung zur Temperaturkompensation eines als Regel-Stellglied in Verstärkern angeordneten Feldeffekttransistors

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1563879A (en, 2012) * 1968-02-09 1969-04-18

Also Published As

Publication number Publication date
NL7214912A (en, 2012) 1973-05-07
DE2154654A1 (de) 1973-05-10
GB1351088A (en) 1974-04-24
DE2154654C3 (de) 1982-04-15
DE2154654B2 (de) 1980-01-10
FR2158385B1 (en, 2012) 1977-12-23
IT970159B (it) 1974-04-10

Similar Documents

Publication Publication Date Title
AR196074A1 (en, 2012)
FR2158385B1 (en, 2012)
AU2726271A (en, 2012)
AU2952271A (en, 2012)
AU3005371A (en, 2012)
AU2894671A (en, 2012)
AU2941471A (en, 2012)
AU2485671A (en, 2012)
AU2742671A (en, 2012)
AU2706571A (en, 2012)
AU2880771A (en, 2012)
AU2940971A (en, 2012)
AU2724971A (en, 2012)
AU2755871A (en, 2012)
AU2836771A (en, 2012)
AU2837671A (en, 2012)
AU2854371A (en, 2012)
AU2875571A (en, 2012)
AU2740271A (en, 2012)
AU2885171A (en, 2012)
AR192311Q (en, 2012)
AU2907471A (en, 2012)
AU2927871A (en, 2012)
AU2938071A (en, 2012)
AU3038671A (en, 2012)

Legal Events

Date Code Title Description
ST Notification of lapse