IT964137B - Accrescimento di strati isolanti in particolare per dispositivi semiconduttori - Google Patents
Accrescimento di strati isolanti in particolare per dispositivi semiconduttoriInfo
- Publication number
- IT964137B IT964137B IT28360/72A IT2836072A IT964137B IT 964137 B IT964137 B IT 964137B IT 28360/72 A IT28360/72 A IT 28360/72A IT 2836072 A IT2836072 A IT 2836072A IT 964137 B IT964137 B IT 964137B
- Authority
- IT
- Italy
- Prior art keywords
- growth
- semiconductor devices
- insulating layers
- insulating
- layers
- Prior art date
Links
Classifications
-
- H10P14/6309—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H10P14/6322—
-
- H10W74/43—
-
- H10P14/6342—
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US18383371A | 1971-09-27 | 1971-09-27 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IT964137B true IT964137B (it) | 1974-01-21 |
Family
ID=22674479
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT28360/72A IT964137B (it) | 1971-09-27 | 1972-08-22 | Accrescimento di strati isolanti in particolare per dispositivi semiconduttori |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPS5338916B2 (OSRAM) |
| CA (1) | CA974153A (OSRAM) |
| DE (1) | DE2243285A1 (OSRAM) |
| FR (1) | FR2154664B1 (OSRAM) |
| GB (1) | GB1407222A (OSRAM) |
| IT (1) | IT964137B (OSRAM) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB8507601D0 (en) * | 1985-03-23 | 1985-05-01 | Standard Telephones Cables Ltd | Integrated circuits |
| US5262336A (en) * | 1986-03-21 | 1993-11-16 | Advanced Power Technology, Inc. | IGBT process to produce platinum lifetime control |
| KR910006164B1 (ko) * | 1987-03-18 | 1991-08-16 | 가부시키가이샤 도시바 | 박막형성방법과 그 장치 |
| US6838741B2 (en) * | 2002-12-10 | 2005-01-04 | General Electtric Company | Avalanche photodiode for use in harsh environments |
-
1972
- 1972-08-22 IT IT28360/72A patent/IT964137B/it active
- 1972-08-30 GB GB4015772A patent/GB1407222A/en not_active Expired
- 1972-09-02 DE DE2243285A patent/DE2243285A1/de not_active Withdrawn
- 1972-09-04 JP JP8803072A patent/JPS5338916B2/ja not_active Expired
- 1972-09-14 CA CA151,676A patent/CA974153A/en not_active Expired
- 1972-09-20 FR FR7234255A patent/FR2154664B1/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR2154664A1 (OSRAM) | 1973-05-11 |
| DE2243285A1 (de) | 1973-04-05 |
| JPS5338916B2 (OSRAM) | 1978-10-18 |
| GB1407222A (en) | 1975-09-24 |
| FR2154664B1 (OSRAM) | 1976-05-21 |
| CA974153A (en) | 1975-09-09 |
| JPS4842678A (OSRAM) | 1973-06-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| GB1348391A (en) | Methods of manufacturing semiconductor devices | |
| IT947946B (it) | Dispositivo semiconduttore elettroluminescente | |
| IT956672B (it) | Dispositivo semiconduttore elettroluminescente | |
| JPS51139269A (en) | Method of manufacturing semiconductor element | |
| IT973893B (it) | Semiconduttore con composto contenente gallio | |
| MY7400250A (en) | Fabricating of semiconductor devices | |
| IT947244B (it) | Dispositivo semiconduttore | |
| IT963495B (it) | Apparecchiatura per lo stampaggio di strati sottili | |
| DE2255171B2 (de) | Isolierschicht-feldeffekttransistor | |
| IT975353B (it) | Dispositivo semiconduttore | |
| IT976112B (it) | Procedimento per la fabbricazione di dispositivi semiconduttori | |
| BE788036A (fr) | Elements semiconducteurs piezo-electriques | |
| IT965683B (it) | Dispositivo per fabbricare strati sottili di sostanze inorganiche | |
| IT959277B (it) | Dispositivo semiconduttore | |
| IT964137B (it) | Accrescimento di strati isolanti in particolare per dispositivi semiconduttori | |
| IT958953B (it) | Procedimento per l eliminazione di sporgenze da strati semicondut tori epitassiali | |
| IT949790B (it) | Procedimento per preparare sottili strati di tantalio | |
| AU4801772A (en) | Thin layer semiconductor device | |
| IT946566B (it) | Dispositivo di allineamento per l impiego in apparecchiature di trattamento di articoli semicon duttori | |
| IT939155B (it) | Dispositivo per depositare strati di materiale semiconduttore | |
| IT968985B (it) | Metodo di fabbricazione di dispo sitivi semiconduttori incorporan ti silicio policristallino | |
| AU459971B2 (en) | Formation of openings in insulating layers inmos semiconductor devices | |
| AU4728572A (en) | Manufacturing semiconductor devices | |
| IT952873B (it) | Dispositivo semiconduttore | |
| BE793545A (fr) | Materiau semiconducteur magnetique |