IT946699B - Procedimento per fabbricare una memoria fissa - Google Patents

Procedimento per fabbricare una memoria fissa

Info

Publication number
IT946699B
IT946699B IT19534/72A IT1953472A IT946699B IT 946699 B IT946699 B IT 946699B IT 19534/72 A IT19534/72 A IT 19534/72A IT 1953472 A IT1953472 A IT 1953472A IT 946699 B IT946699 B IT 946699B
Authority
IT
Italy
Prior art keywords
procedure
manufacturing
fixed memory
memory
fixed
Prior art date
Application number
IT19534/72A
Other languages
English (en)
Italian (it)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of IT946699B publication Critical patent/IT946699B/it

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00Electrodes of devices having potential barriers
    • H10D64/60Electrodes characterised by their materials
    • H10D64/66Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C17/00Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
    • G11C17/12Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B20/00Read-only memory [ROM] devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • H10W74/43
IT19534/72A 1971-01-21 1972-01-19 Procedimento per fabbricare una memoria fissa IT946699B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2102854A DE2102854C3 (de) 1971-01-21 1971-01-21 Verfahren zur Herstellung eines Festwertspeichers

Publications (1)

Publication Number Publication Date
IT946699B true IT946699B (it) 1973-05-21

Family

ID=5796572

Family Applications (1)

Application Number Title Priority Date Filing Date
IT19534/72A IT946699B (it) 1971-01-21 1972-01-19 Procedimento per fabbricare una memoria fissa

Country Status (8)

Country Link
JP (1) JPS5716440B1 (OSRAM)
BE (1) BE778166A (OSRAM)
DE (1) DE2102854C3 (OSRAM)
FR (1) FR2122557B1 (OSRAM)
GB (1) GB1373996A (OSRAM)
IT (1) IT946699B (OSRAM)
LU (1) LU64616A1 (OSRAM)
NL (1) NL7115829A (OSRAM)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4064495A (en) * 1976-03-22 1977-12-20 General Electric Company Ion implanted archival memory media and methods for storage of data therein
DE3036869C2 (de) * 1979-10-01 1985-09-05 Hitachi, Ltd., Tokio/Tokyo Integrierte Halbleiterschaltung und Schaltkreisaktivierverfahren
US4476478A (en) * 1980-04-24 1984-10-09 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor read only memory and method of making the same
FR2551247B1 (fr) * 1983-08-23 1988-06-17 Rosencher Emmanuel Memoire integree non volatile reinscriptible, procede de fabrication de cette memoire et dispositif d'ecriture dans celle-ci

Also Published As

Publication number Publication date
JPS5716440B1 (OSRAM) 1982-04-05
GB1373996A (en) 1974-11-13
FR2122557A1 (OSRAM) 1972-09-01
LU64616A1 (OSRAM) 1972-06-26
NL7115829A (OSRAM) 1972-07-25
FR2122557B1 (OSRAM) 1976-07-09
DE2102854C3 (de) 1973-10-11
DE2102854A1 (de) 1972-08-03
BE778166A (fr) 1972-05-16
DE2102854B2 (de) 1973-03-15

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