IT946134B - Dispositivo semiconduttore con contuttori pellicolari di metal lo con migliori caratteristiche di continuita - Google Patents
Dispositivo semiconduttore con contuttori pellicolari di metal lo con migliori caratteristiche di continuitaInfo
- Publication number
- IT946134B IT946134B IT32277/71A IT3227771A IT946134B IT 946134 B IT946134 B IT 946134B IT 32277/71 A IT32277/71 A IT 32277/71A IT 3227771 A IT3227771 A IT 3227771A IT 946134 B IT946134 B IT 946134B
- Authority
- IT
- Italy
- Prior art keywords
- contuctors
- semiconductor device
- film metal
- better continuity
- continuity characteristics
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6326—Deposition processes
- H10P14/6328—Deposition from the gas or vapour phase
- H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
- H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
- H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
- H10P14/6682—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/69—Inorganic materials
- H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
- H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
- H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/02—Contacts, special
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12530271A | 1971-03-17 | 1971-03-17 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IT946134B true IT946134B (it) | 1973-05-21 |
Family
ID=22419085
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT32277/71A IT946134B (it) | 1971-03-17 | 1971-12-11 | Dispositivo semiconduttore con contuttori pellicolari di metal lo con migliori caratteristiche di continuita |
Country Status (13)
| Country | Link |
|---|---|
| US (1) | US3703667A (enExample) |
| JP (1) | JPS5116269B1 (enExample) |
| BE (1) | BE780816A (enExample) |
| CA (1) | CA972472A (enExample) |
| DD (1) | DD95433A5 (enExample) |
| DE (1) | DE2213199A1 (enExample) |
| ES (1) | ES400633A1 (enExample) |
| FR (1) | FR2130125A1 (enExample) |
| GB (1) | GB1366559A (enExample) |
| IT (1) | IT946134B (enExample) |
| NL (1) | NL7203496A (enExample) |
| SE (1) | SE374456B (enExample) |
| SU (1) | SU456437A3 (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57112027A (en) * | 1980-12-29 | 1982-07-12 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPH0225042U (enExample) * | 1988-07-29 | 1990-02-19 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3246173A (en) * | 1964-01-29 | 1966-04-12 | Rca Corp | Signal translating circuit employing insulated-gate field effect transistors coupledthrough a common semiconductor substrate |
| US3374406A (en) * | 1964-06-01 | 1968-03-19 | Rca Corp | Insulated-gate field-effect transistor |
| US3339128A (en) * | 1964-07-31 | 1967-08-29 | Rca Corp | Insulated offset gate field effect transistor |
| US3528168A (en) * | 1967-09-26 | 1970-09-15 | Texas Instruments Inc | Method of making a semiconductor device |
| JPS5144492B2 (enExample) * | 1971-09-03 | 1976-11-29 |
-
1971
- 1971-03-17 US US125302A patent/US3703667A/en not_active Expired - Lifetime
- 1971-12-11 IT IT32277/71A patent/IT946134B/it active
-
1972
- 1972-01-17 CA CA132,627A patent/CA972472A/en not_active Expired
- 1972-02-14 SU SU1747998A patent/SU456437A3/ru active
- 1972-02-18 DD DD160986A patent/DD95433A5/xx unknown
- 1972-03-07 FR FR7207858A patent/FR2130125A1/fr not_active Withdrawn
- 1972-03-09 GB GB1117772A patent/GB1366559A/en not_active Expired
- 1972-03-10 ES ES400633A patent/ES400633A1/es not_active Expired
- 1972-03-16 JP JP47026892A patent/JPS5116269B1/ja active Pending
- 1972-03-16 NL NL7203496A patent/NL7203496A/xx unknown
- 1972-03-16 BE BE780816A patent/BE780816A/xx unknown
- 1972-03-17 SE SE7203400A patent/SE374456B/xx unknown
- 1972-03-17 DE DE19722213199 patent/DE2213199A1/de active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| GB1366559A (en) | 1974-09-11 |
| FR2130125A1 (enExample) | 1972-11-03 |
| NL7203496A (enExample) | 1972-09-19 |
| DE2213199A1 (de) | 1972-09-21 |
| ES400633A1 (es) | 1975-01-16 |
| SU456437A3 (ru) | 1975-01-05 |
| US3703667A (en) | 1972-11-21 |
| BE780816A (fr) | 1972-09-18 |
| JPS5116269B1 (enExample) | 1976-05-22 |
| CA972472A (en) | 1975-08-05 |
| SE374456B (enExample) | 1975-03-03 |
| DD95433A5 (enExample) | 1973-02-05 |
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