CA972472A - Continuity of metal film conductors - Google Patents
Continuity of metal film conductorsInfo
- Publication number
- CA972472A CA972472A CA132,627A CA132627A CA972472A CA 972472 A CA972472 A CA 972472A CA 132627 A CA132627 A CA 132627A CA 972472 A CA972472 A CA 972472A
- Authority
- CA
- Canada
- Prior art keywords
- continuity
- metal film
- film conductors
- conductors
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6326—Deposition processes
- H10P14/6328—Deposition from the gas or vapour phase
- H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
- H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
- H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
- H10P14/6682—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/69—Inorganic materials
- H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
- H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
- H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/02—Contacts, special
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12530271A | 1971-03-17 | 1971-03-17 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA972472A true CA972472A (en) | 1975-08-05 |
Family
ID=22419085
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA132,627A Expired CA972472A (en) | 1971-03-17 | 1972-01-17 | Continuity of metal film conductors |
Country Status (13)
| Country | Link |
|---|---|
| US (1) | US3703667A (enExample) |
| JP (1) | JPS5116269B1 (enExample) |
| BE (1) | BE780816A (enExample) |
| CA (1) | CA972472A (enExample) |
| DD (1) | DD95433A5 (enExample) |
| DE (1) | DE2213199A1 (enExample) |
| ES (1) | ES400633A1 (enExample) |
| FR (1) | FR2130125A1 (enExample) |
| GB (1) | GB1366559A (enExample) |
| IT (1) | IT946134B (enExample) |
| NL (1) | NL7203496A (enExample) |
| SE (1) | SE374456B (enExample) |
| SU (1) | SU456437A3 (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57112027A (en) * | 1980-12-29 | 1982-07-12 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPH0225042U (enExample) * | 1988-07-29 | 1990-02-19 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3246173A (en) * | 1964-01-29 | 1966-04-12 | Rca Corp | Signal translating circuit employing insulated-gate field effect transistors coupledthrough a common semiconductor substrate |
| US3374406A (en) * | 1964-06-01 | 1968-03-19 | Rca Corp | Insulated-gate field-effect transistor |
| US3339128A (en) * | 1964-07-31 | 1967-08-29 | Rca Corp | Insulated offset gate field effect transistor |
| US3528168A (en) * | 1967-09-26 | 1970-09-15 | Texas Instruments Inc | Method of making a semiconductor device |
| JPS5144492B2 (enExample) * | 1971-09-03 | 1976-11-29 |
-
1971
- 1971-03-17 US US125302A patent/US3703667A/en not_active Expired - Lifetime
- 1971-12-11 IT IT32277/71A patent/IT946134B/it active
-
1972
- 1972-01-17 CA CA132,627A patent/CA972472A/en not_active Expired
- 1972-02-14 SU SU1747998A patent/SU456437A3/ru active
- 1972-02-18 DD DD160986A patent/DD95433A5/xx unknown
- 1972-03-07 FR FR7207858A patent/FR2130125A1/fr not_active Withdrawn
- 1972-03-09 GB GB1117772A patent/GB1366559A/en not_active Expired
- 1972-03-10 ES ES400633A patent/ES400633A1/es not_active Expired
- 1972-03-16 JP JP47026892A patent/JPS5116269B1/ja active Pending
- 1972-03-16 NL NL7203496A patent/NL7203496A/xx unknown
- 1972-03-16 BE BE780816A patent/BE780816A/xx unknown
- 1972-03-17 SE SE7203400A patent/SE374456B/xx unknown
- 1972-03-17 DE DE19722213199 patent/DE2213199A1/de active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| GB1366559A (en) | 1974-09-11 |
| FR2130125A1 (enExample) | 1972-11-03 |
| NL7203496A (enExample) | 1972-09-19 |
| DE2213199A1 (de) | 1972-09-21 |
| ES400633A1 (es) | 1975-01-16 |
| SU456437A3 (ru) | 1975-01-05 |
| IT946134B (it) | 1973-05-21 |
| US3703667A (en) | 1972-11-21 |
| BE780816A (fr) | 1972-09-18 |
| JPS5116269B1 (enExample) | 1976-05-22 |
| SE374456B (enExample) | 1975-03-03 |
| DD95433A5 (enExample) | 1973-02-05 |
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