IT941288B - Memoria a matrice di tipo capacitivo - Google Patents

Memoria a matrice di tipo capacitivo

Info

Publication number
IT941288B
IT941288B IT31562/71A IT3156271A IT941288B IT 941288 B IT941288 B IT 941288B IT 31562/71 A IT31562/71 A IT 31562/71A IT 3156271 A IT3156271 A IT 3156271A IT 941288 B IT941288 B IT 941288B
Authority
IT
Italy
Prior art keywords
capacitive
type matrix
matrix memory
memory
type
Prior art date
Application number
IT31562/71A
Other languages
English (en)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Application granted granted Critical
Publication of IT941288B publication Critical patent/IT941288B/it

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/10—DRAM devices comprising bipolar components

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Electronic Switches (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Static Random-Access Memory (AREA)
IT31562/71A 1970-11-27 1971-11-24 Memoria a matrice di tipo capacitivo IT941288B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7017342.A NL165601C (nl) 1970-11-27 1970-11-27 Geintegreerd capacitief matrixgeheugen.

Publications (1)

Publication Number Publication Date
IT941288B true IT941288B (it) 1973-03-01

Family

ID=19811655

Family Applications (1)

Application Number Title Priority Date Filing Date
IT31562/71A IT941288B (it) 1970-11-27 1971-11-24 Memoria a matrice di tipo capacitivo

Country Status (8)

Country Link
US (1) US3761900A (it)
JP (1) JPS5244182B1 (it)
CA (1) CA979526A (it)
FR (1) FR2115442B1 (it)
GB (1) GB1375993A (it)
IT (1) IT941288B (it)
NL (1) NL165601C (it)
SE (1) SE382709B (it)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5434227U (it) * 1977-08-10 1979-03-06
US4621205A (en) * 1984-01-16 1986-11-04 Hewlett-Packard Company Method and apparatus for reducing varactor noise

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FI1A (fi) * 1842-06-29 Blåsmaskiner av järn
US3490007A (en) * 1965-12-24 1970-01-13 Nippon Electric Co Associative memory elements using field-effect transistors
US3448344A (en) * 1966-03-15 1969-06-03 Westinghouse Electric Corp Mosaic of semiconductor elements interconnected in an xy matrix
US3387286A (en) * 1967-07-14 1968-06-04 Ibm Field-effect transistor memory
US3532945A (en) * 1967-08-30 1970-10-06 Fairchild Camera Instr Co Semiconductor devices having a low capacitance junction
JPS4844581B1 (it) * 1969-03-15 1973-12-25
US3533089A (en) * 1969-05-16 1970-10-06 Shell Oil Co Single-rail mosfet memory with capacitive storage

Also Published As

Publication number Publication date
FR2115442A1 (it) 1972-07-07
DE2155263B2 (de) 1977-03-03
NL7017342A (it) 1972-05-30
NL165601C (nl) 1981-04-15
NL165601B (nl) 1980-11-17
CA979526A (en) 1975-12-09
FR2115442B1 (it) 1976-12-03
GB1375993A (en) 1974-12-04
SE382709B (sv) 1976-02-09
JPS5244182B1 (it) 1977-11-05
DE2155263A1 (de) 1972-06-08
US3761900A (en) 1973-09-25

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