FR2115442B1 - - Google Patents

Info

Publication number
FR2115442B1
FR2115442B1 FR7142489A FR7142489A FR2115442B1 FR 2115442 B1 FR2115442 B1 FR 2115442B1 FR 7142489 A FR7142489 A FR 7142489A FR 7142489 A FR7142489 A FR 7142489A FR 2115442 B1 FR2115442 B1 FR 2115442B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7142489A
Other versions
FR2115442A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of FR2115442A1 publication Critical patent/FR2115442A1/fr
Application granted granted Critical
Publication of FR2115442B1 publication Critical patent/FR2115442B1/fr
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/10—DRAM devices comprising bipolar components

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Electronic Switches (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Static Random-Access Memory (AREA)
FR7142489A 1970-11-27 1971-11-26 Expired FR2115442B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7017342.A NL165601C (nl) 1970-11-27 1970-11-27 Geintegreerd capacitief matrixgeheugen.

Publications (2)

Publication Number Publication Date
FR2115442A1 FR2115442A1 (fr) 1972-07-07
FR2115442B1 true FR2115442B1 (fr) 1976-12-03

Family

ID=19811655

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7142489A Expired FR2115442B1 (fr) 1970-11-27 1971-11-26

Country Status (8)

Country Link
US (1) US3761900A (fr)
JP (1) JPS5244182B1 (fr)
CA (1) CA979526A (fr)
FR (1) FR2115442B1 (fr)
GB (1) GB1375993A (fr)
IT (1) IT941288B (fr)
NL (1) NL165601C (fr)
SE (1) SE382709B (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5434227U (fr) * 1977-08-10 1979-03-06
US4621205A (en) * 1984-01-16 1986-11-04 Hewlett-Packard Company Method and apparatus for reducing varactor noise

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FI1A (fi) * 1842-06-29 Blåsmaskiner av järn
US3490007A (en) * 1965-12-24 1970-01-13 Nippon Electric Co Associative memory elements using field-effect transistors
US3448344A (en) * 1966-03-15 1969-06-03 Westinghouse Electric Corp Mosaic of semiconductor elements interconnected in an xy matrix
US3387286A (en) * 1967-07-14 1968-06-04 Ibm Field-effect transistor memory
US3532945A (en) * 1967-08-30 1970-10-06 Fairchild Camera Instr Co Semiconductor devices having a low capacitance junction
JPS4844581B1 (fr) * 1969-03-15 1973-12-25
US3533089A (en) * 1969-05-16 1970-10-06 Shell Oil Co Single-rail mosfet memory with capacitive storage

Also Published As

Publication number Publication date
FR2115442A1 (fr) 1972-07-07
DE2155263B2 (de) 1977-03-03
IT941288B (it) 1973-03-01
NL7017342A (fr) 1972-05-30
NL165601C (nl) 1981-04-15
NL165601B (nl) 1980-11-17
CA979526A (en) 1975-12-09
GB1375993A (en) 1974-12-04
SE382709B (sv) 1976-02-09
JPS5244182B1 (fr) 1977-11-05
DE2155263A1 (de) 1972-06-08
US3761900A (en) 1973-09-25

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Legal Events

Date Code Title Description
ST Notification of lapse