IT8821755A0 - Metodo per accrescere un cristallo di silicio di struttura dendritica. - Google Patents

Metodo per accrescere un cristallo di silicio di struttura dendritica.

Info

Publication number
IT8821755A0
IT8821755A0 IT8821755A IT2175588A IT8821755A0 IT 8821755 A0 IT8821755 A0 IT 8821755A0 IT 8821755 A IT8821755 A IT 8821755A IT 2175588 A IT2175588 A IT 2175588A IT 8821755 A0 IT8821755 A0 IT 8821755A0
Authority
IT
Italy
Prior art keywords
growing
silicon crystal
dendritic structure
dendritic
silicon
Prior art date
Application number
IT8821755A
Other languages
English (en)
Other versions
IT1226404B (it
Inventor
Edgar Leonard Kochka
William Clyde Higginbotham
Paul Anthony Piotrowski
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of IT8821755A0 publication Critical patent/IT8821755A0/it
Application granted granted Critical
Publication of IT1226404B publication Critical patent/IT1226404B/it

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Photovoltaic Devices (AREA)
IT8821755A 1987-09-08 1988-08-26 Metodo per accrescere un cristallo di silicio di struttura dendritica. IT1226404B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US9538387A 1987-09-08 1987-09-08

Publications (2)

Publication Number Publication Date
IT8821755A0 true IT8821755A0 (it) 1988-08-26
IT1226404B IT1226404B (it) 1991-01-15

Family

ID=22251718

Family Applications (1)

Application Number Title Priority Date Filing Date
IT8821755A IT1226404B (it) 1987-09-08 1988-08-26 Metodo per accrescere un cristallo di silicio di struttura dendritica.

Country Status (5)

Country Link
JP (1) JP2575838B2 (it)
KR (1) KR960013580B1 (it)
AU (1) AU602113B2 (it)
FR (1) FR2620135A1 (it)
IT (1) IT1226404B (it)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6143633A (en) * 1995-10-05 2000-11-07 Ebara Solar, Inc. In-situ diffusion of dopant impurities during dendritic web growth of crystal ribbon
AU740188B2 (en) * 1997-10-01 2001-11-01 Ebara Corporation In-situ diffusion of dopant impurities during dendritic web growth of crystal ribbon
JP5030350B2 (ja) * 2001-09-18 2012-09-19 コスモ石油株式会社 シリコンの製造装置および方法
JP5030351B2 (ja) * 2001-09-26 2012-09-19 コスモ石油株式会社 シリコンの製造装置および方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3615261A (en) * 1969-04-02 1971-10-26 Motorola Inc Method of producing single semiconductor crystals
US4415401A (en) * 1980-03-10 1983-11-15 Mobil Solar Energy Corporation Control of atmosphere surrounding crystal growth zone
US4443411A (en) * 1980-12-15 1984-04-17 Mobil Solar Energy Corporation Apparatus for controlling the atmosphere surrounding a crystal growth zone
JPS61178495A (ja) * 1985-01-31 1986-08-11 Fujitsu Ltd 単結晶の成長方法

Also Published As

Publication number Publication date
JP2575838B2 (ja) 1997-01-29
IT1226404B (it) 1991-01-15
AU602113B2 (en) 1990-09-27
KR960013580B1 (ko) 1996-10-09
FR2620135A1 (fr) 1989-03-10
AU2093588A (en) 1989-03-09
KR890005825A (ko) 1989-05-17
JPS6483600A (en) 1989-03-29

Similar Documents

Publication Publication Date Title
EP0314990A3 (en) Process for preferentially etching polycrystalline silicon
KR890008951A (ko) 실리콘 카바이드 기판의 제조방법
FI882007A0 (fi) Menetelmä steroidi-5- -reduktaasin inhibiittorien valmistamiseksi
EP0297867A3 (en) A process for the growth of iii-v group compound semiconductor crystal of a si substrate
EP0259777A3 (en) Method for growing single crystal thin films of element semiconductor
FR2607322B1 (fr) Procede de croissance epitaxiale d'un compose semi-conducteur
DE3855765D1 (de) Dünnschicht-Siliciumhalbleiteranordnung und Verfahren zu ihrer Herstellung
DE3677169D1 (de) Hochreine siliziumnitridfaser und verfahren zu ihrer herstellung.
IT8821522A0 (it) Apparecchio per tagliare cristallo semiconduttore
GB2207809B (en) Method of manufacturing polycrystalline silicon
DE68913429D1 (de) Verfahren zur Herstellung von Silicium-Einkristallen.
DE3377874D1 (en) Method of growing silicon crystals by the czochralski method
KR880701459A (ko) 실리콘 웨이퍼에 바이어스를 형성하기 위한 플래너공정
SG49058A1 (en) Improved method for growing silicon crystal
GB8809809D0 (en) Method of manufacturing single crystal of compound semiconductor & apparatus for same
DE3868176D1 (de) Verfahren zur herstellung von siliciumtetrachlorid.
GB2191112B (en) Method of and device for growing single crystals.
DE3888736T2 (de) Verfahren zur Epitaxieabscheidung von Silizium.
IT1204918B (it) Processo per coltivare baffi di camburo di silicio mediante sottoraffreddamento
DE68917054T2 (de) Verfahren zur Einkristallzüchtung von zersetzbaren Halbleiter-Verbindungen.
IT8821755A0 (it) Metodo per accrescere un cristallo di silicio di struttura dendritica.
IT1173651B (it) Metodo per l'accrescimento di silicio monocristallino su uno strato di mascheratura
IT8741733A0 (it) Procedimento per far crescere cristalli a nastri dendritici di silicio.
KR890700175A (ko) 실리콘 카바이드의 제조방법
JPS6469599A (en) Lid for growing silicon dendritic web crystal

Legal Events

Date Code Title Description
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19970827