IT8619511A0 - Processo per la fabbricazione di transistori ad effetto di campo a "gate" isolato con giunzioni a profondita' nulla mediante planarizzazione. - Google Patents

Processo per la fabbricazione di transistori ad effetto di campo a "gate" isolato con giunzioni a profondita' nulla mediante planarizzazione.

Info

Publication number
IT8619511A0
IT8619511A0 IT8619511A IT1951186A IT8619511A0 IT 8619511 A0 IT8619511 A0 IT 8619511A0 IT 8619511 A IT8619511 A IT 8619511A IT 1951186 A IT1951186 A IT 1951186A IT 8619511 A0 IT8619511 A0 IT 8619511A0
Authority
IT
Italy
Prior art keywords
planarization
insulated
gate
manufacture
field effect
Prior art date
Application number
IT8619511A
Other languages
English (en)
Other versions
IT1189976B (it
IT8619511A1 (it
Inventor
Maria Luisa Polignano
Original Assignee
Sgs Microelettronica Spa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Microelettronica Spa filed Critical Sgs Microelettronica Spa
Priority to IT19511/86A priority Critical patent/IT1189976B/it
Publication of IT8619511A0 publication Critical patent/IT8619511A0/it
Priority to JP62035993A priority patent/JPS62200770A/ja
Priority to EP87301545A priority patent/EP0233791A3/en
Priority to DE198787301545T priority patent/DE233791T1/de
Publication of IT8619511A1 publication Critical patent/IT8619511A1/it
Application granted granted Critical
Publication of IT1189976B publication Critical patent/IT1189976B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41775—Source or drain electrodes for field effect devices characterised by the proximity or the relative position of the source or drain electrode and the gate electrode, e.g. the source or drain electrode separated from the gate electrode by side-walls or spreading around or above the gate electrode
    • H01L29/41783—Raised source or drain electrodes self aligned with the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66613—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation
    • H01L29/66628—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation recessing the gate by forming single crystalline semiconductor material at the source or drain location

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
IT19511/86A 1986-02-21 1986-02-21 Processo per la fabbricazione di transistori ad effetto di campo a "gate" isolato con giunzioni a profondita' nulla mediante planarizzazione IT1189976B (it)

Priority Applications (4)

Application Number Priority Date Filing Date Title
IT19511/86A IT1189976B (it) 1986-02-21 1986-02-21 Processo per la fabbricazione di transistori ad effetto di campo a "gate" isolato con giunzioni a profondita' nulla mediante planarizzazione
JP62035993A JPS62200770A (ja) 1986-02-21 1987-02-20 絶縁ゲ−ト電界効果トランジスタの製造方法
EP87301545A EP0233791A3 (en) 1986-02-21 1987-02-23 Insulated gate field effect transistor and method of manufacture thereof
DE198787301545T DE233791T1 (de) 1986-02-21 1987-02-23 Isolierter gatter-feldeffekttransistor und dessen herstellungsverfahren.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT19511/86A IT1189976B (it) 1986-02-21 1986-02-21 Processo per la fabbricazione di transistori ad effetto di campo a "gate" isolato con giunzioni a profondita' nulla mediante planarizzazione

Publications (3)

Publication Number Publication Date
IT8619511A0 true IT8619511A0 (it) 1986-02-21
IT8619511A1 IT8619511A1 (it) 1987-08-21
IT1189976B IT1189976B (it) 1988-02-10

Family

ID=11158654

Family Applications (1)

Application Number Title Priority Date Filing Date
IT19511/86A IT1189976B (it) 1986-02-21 1986-02-21 Processo per la fabbricazione di transistori ad effetto di campo a "gate" isolato con giunzioni a profondita' nulla mediante planarizzazione

Country Status (4)

Country Link
EP (1) EP0233791A3 (it)
JP (1) JPS62200770A (it)
DE (1) DE233791T1 (it)
IT (1) IT1189976B (it)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5015594A (en) * 1988-10-24 1991-05-14 International Business Machines Corporation Process of making BiCMOS devices having closely spaced device regions
EP0422824A1 (en) * 1989-10-12 1991-04-17 AT&T Corp. Field-effect transistor with polysilicon window pad
CA2031254A1 (en) * 1989-12-01 1991-06-02 Kenji Aoki Doping method of barrier region in semiconductor device
EP0505877A2 (en) * 1991-03-27 1992-09-30 Seiko Instruments Inc. Impurity doping method with adsorbed diffusion source
US5422289A (en) * 1992-04-27 1995-06-06 National Semiconductor Corporation Method of manufacturing a fully planarized MOSFET and resulting structure
FR2807208B1 (fr) 2000-03-29 2003-09-05 St Microelectronics Sa Dispositif semi-conducteur de memoire non volatile et procede de fabrication correspondant
US8999175B2 (en) 2004-01-09 2015-04-07 Ecolab Usa Inc. Methods for washing and processing fruits, vegetables, and other produce with medium chain peroxycarboxylic acid compositions

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5748248A (en) * 1980-09-04 1982-03-19 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS59202669A (ja) * 1983-05-02 1984-11-16 Hitachi Ltd 半導体装置とその製造方法
JPS60198863A (ja) * 1984-03-23 1985-10-08 Nec Corp Ｍｉｓトランジスタ及びその製造方法
JPS6115372A (ja) * 1984-07-02 1986-01-23 Toshiba Corp 半導体装置およびその製造方法
IT1213192B (it) * 1984-07-19 1989-12-14 Ates Componenti Elettron Processo per la fabbricazione di transistori ad effetto di campo agate isolato (igfet) ad elevata velocita' di risposta in circuiti integrati ad alta densita'.

Also Published As

Publication number Publication date
EP0233791A3 (en) 1988-01-13
EP0233791A2 (en) 1987-08-26
IT1189976B (it) 1988-02-10
IT8619511A1 (it) 1987-08-21
DE233791T1 (de) 1988-03-17
JPS62200770A (ja) 1987-09-04

Similar Documents

Publication Publication Date Title
IT8523356A0 (it) Processo per la fabbricazione mediante ricristallizzazione epitassiale di transistori ad effetto di campo a gate isolato con giunzioni a profondita' minima.
IT8421113A1 (it) Procedimento per fabbricare transistor ad effetto di campo
IT7923200A0 (it) Processo perfezionato per la fabbricazione di transistori bipolari.
IT1115542B (it) Processo per la fabbricazione di transistori fet di potenza
IT1230055B (it) Processo per la produzione di allumine boemitiche.
DE3788525D1 (de) Feldeffekttransistoranordnungen.
DE3786363D1 (de) Halbleiteranordnungen mit hoher beweglichkeit.
DE3751098D1 (de) Feldeffekttransistor.
IT1237799B (it) Processo microbico per la produzione di antibiotici immunosoppressivi
DE3782748D1 (de) Feldeffekttransistor mit isoliertem gate.
IT1115346B (it) Processo perfezionato per la fabbricazione di transistori ad effetto di campo
IT8421968A0 (it) Processo per la fabbricazione di transistori ad effetto di campo agate isolato (igfet) ad elevata velocita' di risposta in circuiti integrati ad alta densita'.
IT8423280A0 (it) Processo per la sintesi di 2-metossi-6-bromo-naftalene.
IT8619511A0 (it) Processo per la fabbricazione di transistori ad effetto di campo a "gate" isolato con giunzioni a profondita' nulla mediante planarizzazione.
IT7969328A0 (it) Procedimento per la produzione di un transistore ad effetto di campo a semiconduttore metallico
IT1211125B (it) Composti azotati. processo per la preparazione di
ITRM910621A1 (it) Procedimento per la fabbricazione di transistori con struttura gate -isolante -semiconduttore.
IT8622182A0 (it) Processo per la fabbricazione di transistore ad effetto di campo a "gate" isolata con giunzioni aventi profondita' estremamente ridotta.
IT8021514A0 (it) Metodo di fabbricazione di un transistore ad effetto di campo, aporta isolata e transistore fabbricato con l'ausilio di tale metodo.
IT1128530B (it) Perfezionamento nelle strutture a semiconduttore ad esempio per transistori e procedimento per la loro fabbricazione
IT8521201A0 (it) Transistore mos a canale n con limitazione dell'effetto di perforazione (punch-through) erelativo processo di formazione.
MA20491A1 (fr) Procede de preparation d'aminomethylene-2 indanedione-1,3 substituees sur l'azote
IT8423775A0 (it) Processo e impianto per laproduzione di film orientati.
DE3788206T2 (de) Feldeffekttransistor mit verschobener Bandlücke.
IT8721725A0 (it) Processo per fabbricare strutture (mes)fet sottili, e relativi transistori ad effetto di campo.

Legal Events

Date Code Title Description
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19970227