IT8220692A0 - Dispositivo semiconduttore ad effetto di campo. - Google Patents

Dispositivo semiconduttore ad effetto di campo.

Info

Publication number
IT8220692A0
IT8220692A0 IT8220692A IT2069282A IT8220692A0 IT 8220692 A0 IT8220692 A0 IT 8220692A0 IT 8220692 A IT8220692 A IT 8220692A IT 2069282 A IT2069282 A IT 2069282A IT 8220692 A0 IT8220692 A0 IT 8220692A0
Authority
IT
Italy
Prior art keywords
semiconductor device
field effect
effect semiconductor
field
semiconductor
Prior art date
Application number
IT8220692A
Other languages
English (en)
Other versions
IT1150836B (it
Inventor
Paul O Haugsjaa
Adrian Cogan
Original Assignee
Gte Laboratories Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gte Laboratories Inc filed Critical Gte Laboratories Inc
Publication of IT8220692A0 publication Critical patent/IT8220692A0/it
Application granted granted Critical
Publication of IT1150836B publication Critical patent/IT1150836B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0642—Isolation within the component, i.e. internal isolation
    • H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/7722—Field effect transistors using static field induced regions, e.g. SIT, PBT

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Weting (AREA)
IT20692/82A 1981-04-17 1982-04-13 Dispositivo semiconduttore ad effetto di campo IT1150836B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US25508381A 1981-04-17 1981-04-17

Publications (2)

Publication Number Publication Date
IT8220692A0 true IT8220692A0 (it) 1982-04-13
IT1150836B IT1150836B (it) 1986-12-17

Family

ID=22966761

Family Applications (1)

Application Number Title Priority Date Filing Date
IT20692/82A IT1150836B (it) 1981-04-17 1982-04-13 Dispositivo semiconduttore ad effetto di campo

Country Status (4)

Country Link
JP (1) JPS57181171A (it)
DE (1) DE3213772A1 (it)
GB (1) GB2097188A (it)
IT (1) IT1150836B (it)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3782609D1 (de) * 1986-09-30 1992-12-17 Siemens Ag Silizium-temperatursensor.
JPS6453476A (en) * 1987-08-24 1989-03-01 Nippon Telegraph & Telephone Superconducting three-terminal element and manufacture thereof
EP0435541A3 (en) * 1989-12-26 1991-07-31 Motorola Inc. Semiconductor device having internal current limit overvoltage protection
US5309007A (en) * 1991-09-30 1994-05-03 The United States Of America As Represented By The Secretary Of The Navy Junction field effect transistor with lateral gate voltage swing (GVS-JFET)
US7026669B2 (en) * 2004-06-03 2006-04-11 Ranbir Singh Lateral channel transistor

Also Published As

Publication number Publication date
DE3213772A1 (de) 1982-11-25
IT1150836B (it) 1986-12-17
GB2097188A (en) 1982-10-27
JPS57181171A (en) 1982-11-08

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