JPS57181171A - Field effect semiconductor device - Google Patents

Field effect semiconductor device

Info

Publication number
JPS57181171A
JPS57181171A JP57062643A JP6264382A JPS57181171A JP S57181171 A JPS57181171 A JP S57181171A JP 57062643 A JP57062643 A JP 57062643A JP 6264382 A JP6264382 A JP 6264382A JP S57181171 A JPS57181171 A JP S57181171A
Authority
JP
Japan
Prior art keywords
semiconductor device
field effect
effect semiconductor
field
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57062643A
Other languages
Japanese (ja)
Inventor
Oo Hoogusujiyaa Pooru
Koogan Adorian
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Verizon Laboratories Inc
Original Assignee
GTE Laboratories Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by GTE Laboratories Inc filed Critical GTE Laboratories Inc
Publication of JPS57181171A publication Critical patent/JPS57181171A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/80Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/808Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0642Isolation within the component, i.e. internal isolation
    • H01L29/0649Dielectric regions, e.g. SiO2 regions, air gaps
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/7722Field effect transistors using static field induced regions, e.g. SIT, PBT

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Weting (AREA)
JP57062643A 1981-04-17 1982-04-16 Field effect semiconductor device Pending JPS57181171A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US25508381A 1981-04-17 1981-04-17

Publications (1)

Publication Number Publication Date
JPS57181171A true JPS57181171A (en) 1982-11-08

Family

ID=22966761

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57062643A Pending JPS57181171A (en) 1981-04-17 1982-04-16 Field effect semiconductor device

Country Status (4)

Country Link
JP (1) JPS57181171A (en)
DE (1) DE3213772A1 (en)
GB (1) GB2097188A (en)
IT (1) IT1150836B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6453476A (en) * 1987-08-24 1989-03-01 Nippon Telegraph & Telephone Superconducting three-terminal element and manufacture thereof

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3782609D1 (en) * 1986-09-30 1992-12-17 Siemens Ag SILICON TEMPERATURE SENSOR.
EP0435541A3 (en) * 1989-12-26 1991-07-31 Motorola Inc. Semiconductor device having internal current limit overvoltage protection
US5309007A (en) * 1991-09-30 1994-05-03 The United States Of America As Represented By The Secretary Of The Navy Junction field effect transistor with lateral gate voltage swing (GVS-JFET)
US7026669B2 (en) * 2004-06-03 2006-04-11 Ranbir Singh Lateral channel transistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6453476A (en) * 1987-08-24 1989-03-01 Nippon Telegraph & Telephone Superconducting three-terminal element and manufacture thereof

Also Published As

Publication number Publication date
GB2097188A (en) 1982-10-27
DE3213772A1 (en) 1982-11-25
IT1150836B (en) 1986-12-17
IT8220692A0 (en) 1982-04-13

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