IT8219373A0 - Fotorivelatore a retroazione di fotoni ad alta sensibilita'. - Google Patents
Fotorivelatore a retroazione di fotoni ad alta sensibilita'.Info
- Publication number
- IT8219373A0 IT8219373A0 IT8219373A IT1937382A IT8219373A0 IT 8219373 A0 IT8219373 A0 IT 8219373A0 IT 8219373 A IT8219373 A IT 8219373A IT 1937382 A IT1937382 A IT 1937382A IT 8219373 A0 IT8219373 A0 IT 8219373A0
- Authority
- IT
- Italy
- Prior art keywords
- high sensitivity
- feedback photodetector
- sensitivity photon
- photon feedback
- photodetector
- Prior art date
Links
- 230000035945 sensitivity Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/111—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
- H01L31/1075—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/125—Composite devices with photosensitive elements and electroluminescent elements within one single body
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Composite Materials (AREA)
- Light Receiving Elements (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/230,873 US4399448A (en) | 1981-02-02 | 1981-02-02 | High sensitivity photon feedback photodetectors |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IT8219373A0 true IT8219373A0 (it) | 1982-01-29 |
| IT1149520B IT1149520B (it) | 1986-12-03 |
Family
ID=22866915
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT19373/82A IT1149520B (it) | 1981-02-02 | 1982-01-29 | Fotorivelatore a retroazione di fotoni ad alta sensibilita' |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US4399448A (it) |
| JP (1) | JPS57149779A (it) |
| BE (1) | BE891952A (it) |
| CA (1) | CA1182200A (it) |
| DE (1) | DE3202832A1 (it) |
| FR (1) | FR2499317B1 (it) |
| GB (1) | GB2094551B (it) |
| IT (1) | IT1149520B (it) |
| NL (1) | NL186610C (it) |
| SE (1) | SE455975B (it) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5889887A (ja) * | 1981-11-25 | 1983-05-28 | Univ Tohoku | 半導体光機能デバイス |
| FR2612334B1 (fr) * | 1986-12-12 | 1989-04-21 | Thomson Csf | Dispositif de multiplication de porteurs de charge par un phenomene d'avalanche et son application aux photodetecteurs, aux photocathodes, et aux visionneurs infrarouges |
| GB8828348D0 (en) * | 1988-12-05 | 1989-01-05 | Secr Defence | Photodetector |
| US4979002A (en) * | 1989-09-08 | 1990-12-18 | University Of Colorado Foundation, Inc. | Optical photodiode switch array with zener diode |
| JP3910817B2 (ja) * | 2000-12-19 | 2007-04-25 | ユーディナデバイス株式会社 | 半導体受光装置 |
| US6674064B1 (en) | 2001-07-18 | 2004-01-06 | University Of Central Florida | Method and system for performance improvement of photodetectors and solar cells |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3369133A (en) * | 1962-11-23 | 1968-02-13 | Ibm | Fast responding semiconductor device using light as the transporting medium |
| US3369132A (en) * | 1962-11-14 | 1968-02-13 | Ibm | Opto-electronic semiconductor devices |
| US3278814A (en) * | 1962-12-14 | 1966-10-11 | Ibm | High-gain photon-coupled semiconductor device |
| DE2247966A1 (de) * | 1972-09-29 | 1974-04-11 | Heinz Prof Dr Rer Nat Beneking | Halbleiteranordnung zum nachweis von lichtstrahlen |
| DE2422330A1 (de) * | 1974-05-08 | 1975-11-13 | Siemens Ag | Optoelektronisches halbleiter-koppelelement |
| US3988167A (en) * | 1975-03-07 | 1976-10-26 | Rca Corporation | Solar cell device having improved efficiency |
| US3990101A (en) * | 1975-10-20 | 1976-11-02 | Rca Corporation | Solar cell device having two heterojunctions |
| US4286277A (en) * | 1977-11-22 | 1981-08-25 | The United States Of America As Represented By The Secretary Of The Army | Planar indium antimonide diode array and method of manufacture |
| US4332974A (en) * | 1979-06-28 | 1982-06-01 | Chevron Research Company | Multilayer photovoltaic cell |
-
1981
- 1981-02-02 US US06/230,873 patent/US4399448A/en not_active Expired - Fee Related
-
1982
- 1982-01-20 CA CA000394526A patent/CA1182200A/en not_active Expired
- 1982-01-21 SE SE8200330A patent/SE455975B/sv not_active IP Right Cessation
- 1982-01-29 IT IT19373/82A patent/IT1149520B/it active
- 1982-01-29 DE DE19823202832 patent/DE3202832A1/de active Granted
- 1982-01-29 BE BE0/207182A patent/BE891952A/fr unknown
- 1982-01-29 GB GB8202602A patent/GB2094551B/en not_active Expired
- 1982-02-01 NL NLAANVRAGE8200371,A patent/NL186610C/xx not_active IP Right Cessation
- 1982-02-01 FR FR8201555A patent/FR2499317B1/fr not_active Expired
- 1982-02-02 JP JP57014416A patent/JPS57149779A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6244867B2 (it) | 1987-09-22 |
| FR2499317A1 (fr) | 1982-08-06 |
| IT1149520B (it) | 1986-12-03 |
| FR2499317B1 (fr) | 1985-11-29 |
| US4399448A (en) | 1983-08-16 |
| CA1182200A (en) | 1985-02-05 |
| SE455975B (sv) | 1988-08-22 |
| JPS57149779A (en) | 1982-09-16 |
| DE3202832C2 (it) | 1988-06-01 |
| GB2094551A (en) | 1982-09-15 |
| NL8200371A (nl) | 1982-09-01 |
| DE3202832A1 (de) | 1982-09-02 |
| NL186610C (nl) | 1991-01-02 |
| BE891952A (fr) | 1982-05-17 |
| NL186610B (nl) | 1990-08-01 |
| GB2094551B (en) | 1985-01-03 |
| SE8200330L (sv) | 1982-08-03 |
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