FR2504733B1 - Photodetecteur a porteurs majoritaires - Google Patents
Photodetecteur a porteurs majoritairesInfo
- Publication number
- FR2504733B1 FR2504733B1 FR8206732A FR8206732A FR2504733B1 FR 2504733 B1 FR2504733 B1 FR 2504733B1 FR 8206732 A FR8206732 A FR 8206732A FR 8206732 A FR8206732 A FR 8206732A FR 2504733 B1 FR2504733 B1 FR 2504733B1
- Authority
- FR
- France
- Prior art keywords
- majority carrier
- carrier photodetector
- photodetector
- majority
- carrier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/11—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers, e.g. bipolar phototransistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN heterojunction type
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/257,355 US4471370A (en) | 1981-04-24 | 1981-04-24 | Majority carrier photodetector |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2504733A1 FR2504733A1 (fr) | 1982-10-29 |
FR2504733B1 true FR2504733B1 (fr) | 1987-03-20 |
Family
ID=22975975
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR8206732A Expired FR2504733B1 (fr) | 1981-04-24 | 1982-04-20 | Photodetecteur a porteurs majoritaires |
Country Status (6)
Country | Link |
---|---|
US (1) | US4471370A (fr) |
JP (1) | JPS57183077A (fr) |
CA (1) | CA1192976A (fr) |
DE (1) | DE3215083A1 (fr) |
FR (1) | FR2504733B1 (fr) |
GB (1) | GB2097584B (fr) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5994474A (ja) * | 1982-11-19 | 1984-05-31 | Nec Corp | ヘテロ接合光検出器 |
JPS59104178A (ja) * | 1982-12-07 | 1984-06-15 | Kokusai Denshin Denwa Co Ltd <Kdd> | 半導体受光素子 |
CA1228661A (fr) * | 1984-04-10 | 1987-10-27 | Rca Inc. | Photodetecteur a avalanche |
CA1228662A (fr) * | 1984-04-10 | 1987-10-27 | Paul P. Webb | Photodetecteur a avalanche a region d'absorption a deux surfaces |
CA1228663A (fr) * | 1984-04-10 | 1987-10-27 | Paul P. Webb | Photodetecteur a region d'avalanche isolee |
US4586066A (en) * | 1984-04-10 | 1986-04-29 | Rca Inc. | Avalanche photodetector |
DE3650250D1 (de) * | 1985-07-12 | 1995-04-06 | Hewlett Packard Co | Detektor und mischdiode mit null-polarisationsspannung und herstellungsverfahren. |
US4839709A (en) * | 1985-07-12 | 1989-06-13 | Hewlett-Packard Company | Detector and mixer diode operative at zero bias voltage |
US4857982A (en) * | 1988-01-06 | 1989-08-15 | University Of Southern California | Avalanche photodiode with floating guard ring |
US5121181A (en) * | 1989-01-31 | 1992-06-09 | International Business Machines Corporation | Resonant tunneling photodetector for long wavelength applications |
DE3917685A1 (de) * | 1989-05-31 | 1990-12-06 | Telefunken Electronic Gmbh | Halbleiter-bauelement |
DE3920219A1 (de) * | 1989-06-21 | 1991-01-10 | Licentia Gmbh | Betrieb eines optischen detektors bzw. optischer detektor geeignet fuer diesen betrieb |
US5077597A (en) * | 1990-08-17 | 1991-12-31 | North Carolina State University | Microelectronic electron emitter |
US5459332A (en) * | 1994-03-31 | 1995-10-17 | The United States Of America As Represented By The Secretary Of The Navy | Semiconductor photodetector device |
US6344650B1 (en) * | 1999-04-23 | 2002-02-05 | Sandia Corporation | Electron gas grid semiconductor radiation detectors |
JP3954504B2 (ja) | 2003-01-23 | 2007-08-08 | アスモ株式会社 | モータ |
JP5506258B2 (ja) | 2008-08-06 | 2014-05-28 | キヤノン株式会社 | 整流素子 |
CN108039363A (zh) * | 2017-11-30 | 2018-05-15 | 电子科技大学 | 光驱动SiC/GaN基半导体器件及其制作工艺 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS512393A (fr) * | 1974-06-24 | 1976-01-09 | Hitachi Ltd | |
US4160258A (en) * | 1977-11-18 | 1979-07-03 | Bell Telephone Laboratories, Incorporated | Optically coupled linear bilateral transistor |
US4254429A (en) * | 1978-07-08 | 1981-03-03 | Shunpei Yamazaki | Hetero junction semiconductor device |
US4353081A (en) * | 1980-01-29 | 1982-10-05 | Bell Telephone Laboratories, Incorporated | Graded bandgap rectifying semiconductor devices |
US4410902A (en) * | 1981-03-23 | 1983-10-18 | The United States Of America As Represented By The Secretary Of The Army | Planar doped barrier semiconductor device |
-
1981
- 1981-04-24 US US06/257,355 patent/US4471370A/en not_active Expired - Fee Related
-
1982
- 1982-04-15 CA CA000401046A patent/CA1192976A/fr not_active Expired
- 1982-04-20 FR FR8206732A patent/FR2504733B1/fr not_active Expired
- 1982-04-20 GB GB8211401A patent/GB2097584B/en not_active Expired
- 1982-04-22 DE DE19823215083 patent/DE3215083A1/de not_active Ceased
- 1982-04-22 JP JP57066402A patent/JPS57183077A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
FR2504733A1 (fr) | 1982-10-29 |
GB2097584B (en) | 1985-04-17 |
GB2097584A (en) | 1982-11-03 |
US4471370A (en) | 1984-09-11 |
CA1192976A (fr) | 1985-09-03 |
DE3215083A1 (de) | 1982-11-18 |
JPS57183077A (en) | 1982-11-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |