IT201600089977A1 - Configurazione microelettronica e corrispondente procedimento di fabbricazione per una configurazione microelettronica - Google Patents

Configurazione microelettronica e corrispondente procedimento di fabbricazione per una configurazione microelettronica

Info

Publication number
IT201600089977A1
IT201600089977A1 IT102016000089977A IT201600089977A IT201600089977A1 IT 201600089977 A1 IT201600089977 A1 IT 201600089977A1 IT 102016000089977 A IT102016000089977 A IT 102016000089977A IT 201600089977 A IT201600089977 A IT 201600089977A IT 201600089977 A1 IT201600089977 A1 IT 201600089977A1
Authority
IT
Italy
Prior art keywords
microelectronic configuration
microelectronic
configuration
manufacturing procedure
corresponding manufacturing
Prior art date
Application number
IT102016000089977A
Other languages
English (en)
Italian (it)
Inventor
Fabian Utermoehlen
Fabian Henrici
Ingo Herrmann
Original Assignee
Bosch Gmbh Robert
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bosch Gmbh Robert filed Critical Bosch Gmbh Robert
Publication of IT201600089977A1 publication Critical patent/IT201600089977A1/it

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14643Photodiode arrays; MOS imagers
    • H01L27/14649Infrared imagers
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02Constructional details
    • G01J5/0215Compact construction
    • G01J5/022Monolithic
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02Constructional details
    • G01J5/0225Shape of the cavity itself or of elements contained in or suspended over the cavity
    • G01J5/023Particular leg structure or construction or shape; Nanotubes
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02Constructional details
    • G01J5/0225Shape of the cavity itself or of elements contained in or suspended over the cavity
    • G01J5/024Special manufacturing steps or sacrificial layers or layer structures
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02Constructional details
    • G01J5/04Casings
    • G01J5/041Mountings in enclosures or in a particular environment
    • G01J5/045Sealings; Vacuum enclosures; Encapsulated packages; Wafer bonding structures; Getter arrangements
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02Constructional details
    • G01J5/04Casings
    • G01J5/046Materials; Selection of thermal materials
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02Constructional details
    • G01J5/08Optical arrangements
    • G01J5/0806Focusing or collimating elements, e.g. lenses or concave mirrors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/14618Containers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/14625Optical elements or arrangements associated with the device
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0203Containers; Encapsulations, e.g. encapsulation of photodiodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0224Electrodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0232Optical elements or arrangements associated with the device

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Nanotechnology (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Radiation Pyrometers (AREA)
IT102016000089977A 2015-09-10 2016-09-06 Configurazione microelettronica e corrispondente procedimento di fabbricazione per una configurazione microelettronica IT201600089977A1 (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102015217290.2A DE102015217290A1 (de) 2015-09-10 2015-09-10 Mikroelektronische Anordnung und entsprechendes Herstellungsverfahren für eine mikroelektronische Anordnung

Publications (1)

Publication Number Publication Date
IT201600089977A1 true IT201600089977A1 (it) 2018-03-06

Family

ID=58160891

Family Applications (1)

Application Number Title Priority Date Filing Date
IT102016000089977A IT201600089977A1 (it) 2015-09-10 2016-09-06 Configurazione microelettronica e corrispondente procedimento di fabbricazione per una configurazione microelettronica

Country Status (4)

Country Link
CN (1) CN106525250A (fr)
DE (1) DE102015217290A1 (fr)
FR (1) FR3041151A1 (fr)
IT (1) IT201600089977A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022259535A1 (fr) * 2021-06-11 2022-12-15 株式会社京都セミコンダクター Dispositif de réception de lumière

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19923606A1 (de) 1998-06-30 2000-01-13 Bosch Gmbh Robert Vorrichtung zur Erfassung elektromagnetischer Strahlung
CN1258820C (zh) * 1998-06-30 2006-06-07 罗伯特·博施有限公司 电磁辐射的探测装置
US7326932B2 (en) * 2005-01-26 2008-02-05 Analog Devices, Inc. Sensor and cap arrangement
US7692148B2 (en) * 2005-01-26 2010-04-06 Analog Devices, Inc. Thermal sensor with thermal barrier
US8487260B2 (en) * 2005-01-26 2013-07-16 Analog Devices, Inc. Sensor
WO2011055654A1 (fr) * 2009-11-05 2011-05-12 コニカミノルタオプト株式会社 Dispositif de capture d'image et procédé de fabrication de ce dispositif de capture d'image
US8664602B2 (en) * 2011-12-19 2014-03-04 Bae Systems Information And Electronic Systems Integration Inc. Wafer-level intrapixel getter reflector whole die encapsulation device and method
WO2014085664A1 (fr) * 2012-11-30 2014-06-05 Robert Bosch Gmbh Capteur infrarouge à mems doté d'une lentille plasmonique
CN104310300A (zh) * 2014-09-23 2015-01-28 杭州大立微电子有限公司 集成像元级聚光透镜的红外探测器及其制备方法

Also Published As

Publication number Publication date
DE102015217290A1 (de) 2017-03-16
FR3041151A1 (fr) 2017-03-17
CN106525250A (zh) 2017-03-22

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