IT1311701B1 - IONIC PULVERIZATION CATHODE FOR MAGNETRON UNBALKED PLATFORM AND COATING SYSTEM WITH THE SAME - Google Patents

IONIC PULVERIZATION CATHODE FOR MAGNETRON UNBALKED PLATFORM AND COATING SYSTEM WITH THE SAME

Info

Publication number
IT1311701B1
IT1311701B1 IT1999PN000060A ITPN990060A IT1311701B1 IT 1311701 B1 IT1311701 B1 IT 1311701B1 IT 1999PN000060 A IT1999PN000060 A IT 1999PN000060A IT PN990060 A ITPN990060 A IT PN990060A IT 1311701 B1 IT1311701 B1 IT 1311701B1
Authority
IT
Italy
Prior art keywords
unbalked
pulverization
magnetron
ionic
cathode
Prior art date
Application number
IT1999PN000060A
Other languages
Italian (it)
Inventor
Yudian Fan
Baihai Wang
Anthony C H Wong
George Bonatsos
Original Assignee
Zhentao Int Titanium Coating
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Zhentao Int Titanium Coating filed Critical Zhentao Int Titanium Coating
Publication of ITPN990060A0 publication Critical patent/ITPN990060A0/en
Publication of ITPN990060A1 publication Critical patent/ITPN990060A1/en
Application granted granted Critical
Publication of IT1311701B1 publication Critical patent/IT1311701B1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Disintegrating Or Milling (AREA)
IT1999PN000060A 1998-10-09 1999-07-16 IONIC PULVERIZATION CATHODE FOR MAGNETRON UNBALKED PLATFORM AND COATING SYSTEM WITH THE SAME IT1311701B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN98120365A CN1109127C (en) 1998-10-09 1998-10-09 Non-balance plane magnetic controlled sputtering cathode and film plating device thereof

Publications (3)

Publication Number Publication Date
ITPN990060A0 ITPN990060A0 (en) 1999-07-16
ITPN990060A1 ITPN990060A1 (en) 2001-01-16
IT1311701B1 true IT1311701B1 (en) 2002-03-19

Family

ID=5226709

Family Applications (1)

Application Number Title Priority Date Filing Date
IT1999PN000060A IT1311701B1 (en) 1998-10-09 1999-07-16 IONIC PULVERIZATION CATHODE FOR MAGNETRON UNBALKED PLATFORM AND COATING SYSTEM WITH THE SAME

Country Status (3)

Country Link
CN (1) CN1109127C (en)
GB (1) GB2342361B (en)
IT (1) IT1311701B1 (en)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100846484B1 (en) * 2002-03-14 2008-07-17 삼성전자주식회사 Rotation magnetron in magnetron electrode and method of manufacturing the same and sputtering apparatus with the same
DE102006020004B4 (en) * 2006-04-26 2011-06-01 Systec System- Und Anlagentechnik Gmbh & Co.Kg Apparatus and method for homogeneous PVD coating
JP4526582B2 (en) * 2007-11-30 2010-08-18 パナソニック株式会社 Sputtering apparatus and sputtering method
CN201614406U (en) * 2008-08-27 2010-10-27 梯尔涂层有限公司 Equipment for forming cladding layer of deposition material
JP2010144199A (en) * 2008-12-17 2010-07-01 Canon Anelva Corp Vacuum vessel, vacuum treatment apparatus having vacuum vessel, and method for manufacturing vacuum vessel
US20120125766A1 (en) * 2010-11-22 2012-05-24 Zhurin Viacheslav V Magnetron with non-equipotential cathode
CN102586750A (en) * 2012-03-14 2012-07-18 无锡康力电子有限公司 Planar moving target mechanism
CN105200381B (en) * 2015-10-27 2018-06-12 中国科学院兰州化学物理研究所 The auxiliary magnetic control sputtering film plating device of anodic field
CN106435500B (en) * 2016-09-30 2018-07-27 西南交通大学 A kind of magnetic field sources for planar rondure magnetron sputtering cathode target
CN109065429B (en) * 2018-08-10 2020-05-05 成都极星等离子科技有限公司 Ion source capable of reducing electron escape rate
CN109706428A (en) * 2019-02-25 2019-05-03 常州星宇车灯股份有限公司 A kind of sputtering target assembly
CN114574830B (en) * 2022-03-11 2024-03-26 陕西理工大学 Magnet arrangement structure for magnetron sputtering target cathode
CN114351104B (en) * 2022-03-21 2022-06-07 山西金山磁材有限公司 Magnetic flux device of magnetron sputtering planar target
CN115011941A (en) * 2022-06-06 2022-09-06 中国科学院电工研究所 Permanent magnet selective coating method based on variable magnetic field magnetron sputtering coating device

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH648690A5 (en) * 1980-10-14 1985-03-29 Balzers Hochvakuum CATHODE ARRANGEMENT FOR SPRAYING MATERIAL FROM A TARGET IN A CATHODE SPRAYING SYSTEM.
US4517070A (en) * 1984-06-28 1985-05-14 General Motors Corporation Magnetron sputtering cathode assembly and magnet assembly therefor
KR950000011B1 (en) * 1990-02-28 1995-01-07 니찌덴 아네루바 가부시끼가이샤 Magnetron sputtering apparatus and thin film depositing method
US5441614A (en) * 1994-11-30 1995-08-15 At&T Corp. Method and apparatus for planar magnetron sputtering
CN2232044Y (en) * 1995-01-24 1996-07-31 郑世民 Large return passage closed sputtering trace column magnetic control target
CN1157335A (en) * 1996-02-13 1997-08-20 王福贞 Permanent-magnet controlled plane cathode arc source
US5736019A (en) * 1996-03-07 1998-04-07 Bernick; Mark A. Sputtering cathode
CN2241698Y (en) * 1996-03-08 1996-12-04 甘国工 Plane magnetic control sputtering source
US6081725A (en) * 1996-10-30 2000-06-27 Nec Corporation Portable telephone system and control method therefor

Also Published As

Publication number Publication date
GB9903261D0 (en) 1999-04-07
ITPN990060A0 (en) 1999-07-16
CN1109127C (en) 2003-05-21
CN1215094A (en) 1999-04-28
GB2342361B (en) 2003-06-04
GB2342361A (en) 2000-04-12
ITPN990060A1 (en) 2001-01-16

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