GB2342361A - Planar unbalanced magnetron sputtering cathode - Google Patents
Planar unbalanced magnetron sputtering cathode Download PDFInfo
- Publication number
- GB2342361A GB2342361A GB9903261A GB9903261A GB2342361A GB 2342361 A GB2342361 A GB 2342361A GB 9903261 A GB9903261 A GB 9903261A GB 9903261 A GB9903261 A GB 9903261A GB 2342361 A GB2342361 A GB 2342361A
- Authority
- GB
- United Kingdom
- Prior art keywords
- permanent magnets
- magnetron sputtering
- vacuum chamber
- target
- electromagnets
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000001755 magnetron sputter deposition Methods 0.000 title claims abstract description 41
- 238000000576 coating method Methods 0.000 claims abstract description 34
- 239000011248 coating agent Substances 0.000 claims abstract description 31
- 230000005291 magnetic effect Effects 0.000 claims abstract description 16
- 238000001816 cooling Methods 0.000 claims abstract description 6
- 230000005294 ferromagnetic effect Effects 0.000 claims abstract description 6
- 238000000151 deposition Methods 0.000 claims abstract description 3
- 230000008021 deposition Effects 0.000 claims abstract description 3
- 238000004544 sputter deposition Methods 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 12
- 229910052742 iron Inorganic materials 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 4
- 239000011247 coating layer Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 229910001209 Low-carbon steel Inorganic materials 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
- H01J37/3408—Planar magnetron sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Disintegrating Or Milling (AREA)
Abstract
The present invention relates to a planar unbalanced magnetron sputtering cathode which comprises a target 11, a non-ferromagnetic back plate 14, permanent magnets 13 and pole shoes 12,16. The N-S axes of the permanent magnets are parallel to the target surface and located between the target and the non-ferromagnetic back plate. The magnetic poles with same polarity of the permanent magnet on both sides are opposite to each other. The interior pole shoe 16 is disposed between the permanent magnets. The outer pole shoes 12 are disposed on both sides outside the permanent magnets. A water-cooling channel 15 is located between the permanent magnets and the target. In the coating system equipped with said planar unbalanced magnetron sputtering cathodes, the cathodes are well-distributed near the inner wall of the vacuum chamber and respective electromagnets are disposed in the center of the vacuum chamber. The polarities of the electromagnets and the magnetron sputtering cathodes are opposite from each other. The work piece holder for film deposition is put between the cathodes and the electromagnets. The present invention ensures the whole vacuum chamber is filled with the complete confined field line net cages and the electrons within the whole coating space are controlled, so that the electrons do not easily escape to the wall of the vacuum chamber(anode), thus and the gas ionization rate within the whole space of the vacuum chamber is increased.
Description
PLANAR UNBALANCED MAGNETRON SPUTTERING CATHODE
AND COATING SYSTEM WITH THE SAME
The present invention relates to a planar unbalanced magnetron sputtering cathode and a coating system with the same, belonging to the technical field of the thin film deposition under vacuum condition.
At present, the planar unbalanced magnetron sputtering cathode applied in industry, such as the cathode adopted by Hauzer Techno Coating (Netherlands) in HTC coating system, employs an electromagnet for enhancing the outer magnetic pole of conventional magnetron sputtering cathode, the unbalanced magnetron sputtering cathode constructed by the electromagnet is shown in Fig. 1. Said cathode was disclosed in the article entitled"A new method for hard coatings: ABSTH (arc bond sputtering)", written by W.-D. Munz, D.
Schulze and F. J. M. Hauzer, Surface and coatings
Technology, 50 (1992) 169-178. As shown in Fig. 1, the cathode includes an electromagnetic coil 1, a target 2, permanent magnets 3, and a vacuum chamber 4. In this configuration, the magnetic field is generated by the permanent magnets, the N-S axis of the permanent magnets are vertical to the target surface, the polarities of the outer permanent magnets and the interior permanent magnet are opposed to each other, the outer permanent magnets and the interior permanent magnet are connected by the back plate made of pure iron or low-carbon steel.
Now, a vacuum coating system equipped with the planar unbalanced magnetron sputtering cathodes is available on the market, such as the HTC1000-4 ABS coating system manufactured by Hauser Techno Coating,
Netherlands. This coating system is equipped with four planar unbalanced magnetron sputtering cathodes as shown in Fig. 1, within the vacuum chamber. As shown in Fig.
2, the coating system includes four planar unbalanced magnetron sputtering cathodes, each of them comprising an electromagnetic coil 1, a target 2, permanent magnets 3, in the figure, the reference number 5 indicates the race track field lines, the reference number 6 indicates the divergent field lines and the reference number 7 indicates a planet rotating work piece holder. The polarities of the magnetic fields of two adjacent unbalanced magnetron sputtering cathodes are opposite from each other. Therefore, the field lines originating from each pole are connected, such that the field line nets can be formed within the vacuum chamber to confine the electrons. The field line nets confining the electrons are near to the wall of the vacuum chamber, such that the ionization rate of gas in this region can be increased. But the effect is not obvious in the areas which have high coating rate within the vacuum chamber, i. e. the areas requiring higher ionization rate. Furthermore, the field line nets that confine the electrons are not closed at both ends of the vacuum chamber, thus it will be easy for the electrons to escape from there and reach the wall of the vacuum chamber (anode).
The planar unbalanced magnetron sputtering cathode of the present invention comprises a target, a nonferromagnetic back plate, permanent magnets and pole shoes. The N-S axes of the permanent magnets are parallel to the target surface and located between the target and the non-ferromagnetic back plate. The magnetic poles of the permanent magnets having the same polarity disposed on the left and the right sides are opposite to each other. An interior pole shoe is disposed between the permanent magnets. Outer pole shoes are disposed on both sides outside the permanent magnets. A water-cooling channel is disposed between the permanent magnets and the target.
The coating system of the invention is equipped with the above mentioned planar unbalanced magnetron sputtering cathodes. Said cathodes are welldistributed near the inner wall of the vacuum chamber of the coating system, and electromagnets are disposed at the center of the vacuum chamber. The magnetic polarities of the electromagnets and the magnetron sputtering cathodes are opposite from each other. The work pieces to be film deposited may be put on a planet rotating holder located between the cathodes and the electromagnets.
Some of the field lines coming from the interior pole shoe of the planar unbalanced magnetron sputtering cathode of the present invention, passing into the target surface, are known as the race track field lines and form the race track magnetic field; the others not passing into the target surface are known as divergent field lines. Therefore, the distribution of the field lines for the unbalanced magnetron sputtering cathode is effected.
Applying the cathodes of the present invention to the coating system and having the electromagnets disposed in the center of the vacuum chamber, have the advantage that the divergent field lines from the planar unbalanced magnetron sputtering cathodes will substantially extend to the center of the vacuum chamber, such that all the work pieces in the whole vacuum chamber will be immersed into the plasma and bombarded by ions.
Said electromagnets may be held at a floating potential or supplied with a negative bias voltage which is lower than the sputtering threshold so as to reflect the arriving electrons which have moved spirally to the center magnet along the divergent field lines.
The other advantage of the coating system of the present invention is in that the whole vacuum chamber is made to be filled with the complete confined field line net cages and the electrons within the whole coating space are controlled, so that the electrons cannot easily escape to the wall of the vacuum chamber (anode), and accordingly the gas ionization rate, i. e., the ion density of the plasma within the whole space of the vacuum chamber is increased. As a result of this, the film layers of the work pieces will be bombarded by more ions.
Thus at least in its preferred forms the present invention provides a planar unbalanced magnetron sputtering cathode and a coating system with the same which make the whole vacuum chamber filled with the completely confined field line net cage and realize the controlling of the electrons within the whole coating space of the vacuum chamber, so that it is not easy for the electrons to escape to the wall of the vacuum chamber (anode), and the gas ionization rate within the whole space of the vacuum chamber can be increased.
Some preferred embodiments of the invention will now be described by way of example only and with reference to the accompanying drawings, in which:
Fig. 1 is a diagrammatic view of the Hauzer planar unbalanced magnetron sputtering cathode;
Fig. 2 is a diagrammatic view of the Hauzer Coating
System in the prior art;
Fig. 3 is a diagrammatic view of a planar unbalanced magnetron sputtering cathode according to the present invention;
Fig. 4 is a diagrammatic view of a coating system according to the present invention equipped with the planar unbalanced magnetron sputtering cathodes shown in
Fig. 3;
Fig. 5 is a diagrammatic view of the situation where the field line net cages are confined at the top of the vacuum chamber.
In Fig. 3, the reference number 11 represents a target, 12 represents the outer pole shoes which are made of pure iron, 13 represents a permanent magnet, 14 represents a non-ferromagnetic back plate which is made of Teflon, 15 represents a water-cooling channel, 16 represents an interior pole shoe, 17 represents a strong plasma zone, 18 represents the divergent field lines, 19 represents the race track field lines.
In Fig. 4, the reference number 21 represents a vacuum chamber, 22 represents the interior pole shoes of the electromagnets made of pure iron, 23 represents the coils of the electromagnets, 24 represents the outer pole shoes of the electromagnets made of pure iron, 25 represents the back plates of the electromagnets, which are made of pure iron, 26 represents the outer field lines which form an outer field line net cage, 27 represents the interior field lines which form an interior field line net cage, 28 represents the race track field lines, 29 represents the unbalanced magnetron sputtering cathodes described above.
In Fig. 5, the reference number 21 represents a vacuum chamber, 26 represents the outer field line net cages, 28 represents the race track field lines, 29 represents the unbalanced magnetron sputtering cathodes described above, and 30 represents the electromagnets.
As shown in Fig. 3, an unbalanced magnetron sputtering cathode according to the present invention comprises a target 11, a non-iron magnetic back plate 14, the permanent magnets 13 and the pole shoes 12 and 16. The N-S axes of the permanent magnets are parallel to the target surface and located between the target 11 and the non-ferromagnetic back plate 14. The north poles of the permanent magnets on both sides are facing each other. The interior pole shoe 16 is disposed between the permanent magnets on both sides. The outer pole shoes 12 are disposed on both sides outside the permanent magnets. A water-cooling channel 15 is disposed between the permanent magnets and the target.
Fig. 4 shows a diagrammatic view of a coating system according to the present invention equipped with the unbalanced magnetron sputtering cathodes. In the system, four planar unbalanced magnetron sputtering cathodes are well-distributed near the inner wall of the vacuum chamber. In the center of the vacuum chamber, there are provided the electromagnets whose N and S magnetic poles are opposite from the ones of the magnetron sputtering cathodes. A planet rotating work piece holder may be located in the space between the wall of the vacuum chamber and the electromagnets.
The electromagnets are employed as the center magnets of the coating system of the present invention such that the strength of the magnetic field can be adjusted easily for obtaining the various ionization rates required by different coating processes. Under the condition of a given process, a permanent magnet could also be simply used as the center magnets.
As shown in Fig. 4, the whole arrangement could be divided into four same units, and each unit includes a planar unbalanced magnetron sputtering cathode and an electromagnet. The magnetic field of the electromagnet is similar to that of the planar unbalanced magnetron sputtering cathode of the invention, that is to say, it includes two parts known as a race track magnetic field and a interior divergent magnetic field. The race track magnetic field of each planar unbalanced magnetron sputtering cathode is facing to those of the electromagnet, and their polarities are opposite. In every unit, the divergent magnetic fields of both the planar unbalanced magnetron sputtering cathode and the electromagnet act together to construct an outer field line net cage and an interior field line net cage with the top and the bottom ends closed. Fig. 5 shows the closure of the top (or bottom) ends of the field line cage. The electrons could then be avoided escaping from the upper and lower sides of the vacuum chamber to the wall of the vacuum chamber (i. e. anode). In the coating system, there are totally eight complete confined field line net cages which fill the whole vacuum chamber, as shown in the figure, in order to control the electrons within the whole coating space, so that the electrons cannot easily escape to the wall of vacuum chamber (anode). As a result, the gas ionization rate within the whole space of vacuum chamber can be increased.
Each of the units has the planar unbalanced magnetron sputtering effect independently. Such unit could be used in the coating system either separately or combined in any number, such as the arrangement of 4 units shown in Fig. 4.
In addition, in order to keep a high gas ionization in the coating space, the center electromagnets are held at a floating potential or supplied with a negative bias voltage which is lower than a sputtering threshold of the material thereof. Therefore, the electrons moving spirally along the divergent field lines and toward the electromagnets will be reflected therefrom, and come into collision with the molecules of the gas filling in the coating space. Thus, the ionization rate is increased, more ions can be bombarded onto the coating layer of the work pieces, the quality of the coating layer, such as the binding strength between the coating layer and the work piece, will be improved.
It is obvious that the above described planar unbalanced magnetron sputtering cathode and the coating system have the advantage of wide use in magnetron sputtering process. It could be understood that the specific embodiments of the invention described above are illustrative and not intended to limit the invention. There exist various modifications which are easy to be realized to those skilled in the art of thin films deposition without departing from the scope of the appended claims.
Claims (5)
- Claims 1. A planar unbalanced magnetron sputtering cathode comprising a target, a non-ferromagnetic back plate, permanent magnets, an interior pole shoe, outer pole shoes and a water-cooling channel, wherein the N-S axes of said permanent magnets are parallel to the surface of the target and located between the target and the nonferromagnetic back plate, the magnetic poles of said permanent magnets with the same polarity are opposite to each other, the interior pole shoe is disposed between said permanent magnets, the outer pole shoes are disposed on both sides outside said permanent magnets, and said water-cooling channel is located between said permanent magnets and said target.
- 2. A coating system equipped with a planar unbalanced magnetron sputtering cathode according to claim 1, comprising planar unbalanced magnetron sputtering cathodes well-distributed near the inner wall of a vacuum chamber; electromagnets disposed in the center of the vacuum chamber, the polarities of said electromagnets and said magnetron sputtering cathodes being opposite from each other; a work piece holder for film deposition being put between said cathodes and said electromagnets.
- 3. A coating system as claimed in claim 2, wherein said electromagnets are held at a floating potential or supplied with a negative bias voltage which is lower than a sputtering threshold of the material to be coated.
- 4. A planar unbalanced magnetron sputtering cathod as herein described with reference to the accompanying drawings.
- 5. A coating system as herein described with reference to the accompanying drawings.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN98120365A CN1109127C (en) | 1998-10-09 | 1998-10-09 | Non-balance plane magnetic controlled sputtering cathode and film plating device thereof |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| GB9903261D0 GB9903261D0 (en) | 1999-04-07 |
| GB2342361A true GB2342361A (en) | 2000-04-12 |
| GB2342361B GB2342361B (en) | 2003-06-04 |
Family
ID=5226709
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB9903261A Expired - Fee Related GB2342361B (en) | 1998-10-09 | 1999-02-12 | Planar unbalanced magnetron sputtering cathode and coating system with the same |
Country Status (3)
| Country | Link |
|---|---|
| CN (1) | CN1109127C (en) |
| GB (1) | GB2342361B (en) |
| IT (1) | IT1311701B1 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007124879A2 (en) * | 2006-04-26 | 2007-11-08 | Systec System- Und Anlagentechnik Gmbh & Co. Kg | Homogeneous pvd coating device and method |
| GB2462890A (en) * | 2008-08-27 | 2010-03-03 | Teer Coatings Ltd | Magnetron sputter ion plating system and method for deposition of a coating |
| US20120125766A1 (en) * | 2010-11-22 | 2012-05-24 | Zhurin Viacheslav V | Magnetron with non-equipotential cathode |
| CN102586750A (en) * | 2012-03-14 | 2012-07-18 | 无锡康力电子有限公司 | Planar moving target mechanism |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100846484B1 (en) * | 2002-03-14 | 2008-07-17 | 삼성전자주식회사 | Rotation magnetron in magnetron electrode and method of manufacturing the same and sputtering apparatus with the same |
| JP4526582B2 (en) * | 2007-11-30 | 2010-08-18 | パナソニック株式会社 | Sputtering apparatus and sputtering method |
| JP2010144199A (en) * | 2008-12-17 | 2010-07-01 | Canon Anelva Corp | Vacuum vessel, vacuum treatment apparatus having vacuum vessel, and method for manufacturing vacuum vessel |
| CN105200381B (en) * | 2015-10-27 | 2018-06-12 | 中国科学院兰州化学物理研究所 | The auxiliary magnetic control sputtering film plating device of anodic field |
| CN106435500B (en) * | 2016-09-30 | 2018-07-27 | 西南交通大学 | A kind of magnetic field sources for planar rondure magnetron sputtering cathode target |
| CN109065429B (en) * | 2018-08-10 | 2020-05-05 | 成都极星等离子科技有限公司 | Ion source capable of reducing electron escape rate |
| CN109706428A (en) * | 2019-02-25 | 2019-05-03 | 常州星宇车灯股份有限公司 | A kind of sputtering target assembly |
| CN114574830B (en) * | 2022-03-11 | 2024-03-26 | 陕西理工大学 | Magnet arrangement structure for magnetron sputtering target cathode |
| CN114351104B (en) * | 2022-03-21 | 2022-06-07 | 山西金山磁材有限公司 | Magnetic flux device of magnetron sputtering planar target |
| CN115011941B (en) * | 2022-06-06 | 2024-08-23 | 中国科学院电工研究所 | Permanent magnet selective coating method based on variable magnetic field magnetron sputtering coating device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4448653A (en) * | 1980-10-14 | 1984-05-15 | Balzers Aktiengesellschaft | Cathode arrangement for sputtering material from a target in a cathode sputtering unit |
| EP0444658A2 (en) * | 1990-02-28 | 1991-09-04 | Anelva Corporation | Magnetron sputtering apparatus and thin film depositing method |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4517070A (en) * | 1984-06-28 | 1985-05-14 | General Motors Corporation | Magnetron sputtering cathode assembly and magnet assembly therefor |
| US5441614A (en) * | 1994-11-30 | 1995-08-15 | At&T Corp. | Method and apparatus for planar magnetron sputtering |
| CN2232044Y (en) * | 1995-01-24 | 1996-07-31 | 郑世民 | Large return passage closed sputtering trace column magnetic control target |
| CN1157335A (en) * | 1996-02-13 | 1997-08-20 | 王福贞 | Permanent-magnet controlled plane cathode arc source |
| US5736019A (en) * | 1996-03-07 | 1998-04-07 | Bernick; Mark A. | Sputtering cathode |
| CN2241698Y (en) * | 1996-03-08 | 1996-12-04 | 甘国工 | Plane magnetic control sputtering source |
| US6081725A (en) * | 1996-10-30 | 2000-06-27 | Nec Corporation | Portable telephone system and control method therefor |
-
1998
- 1998-10-09 CN CN98120365A patent/CN1109127C/en not_active Expired - Fee Related
-
1999
- 1999-02-12 GB GB9903261A patent/GB2342361B/en not_active Expired - Fee Related
- 1999-07-16 IT IT1999PN000060A patent/IT1311701B1/en active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4448653A (en) * | 1980-10-14 | 1984-05-15 | Balzers Aktiengesellschaft | Cathode arrangement for sputtering material from a target in a cathode sputtering unit |
| EP0444658A2 (en) * | 1990-02-28 | 1991-09-04 | Anelva Corporation | Magnetron sputtering apparatus and thin film depositing method |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007124879A2 (en) * | 2006-04-26 | 2007-11-08 | Systec System- Und Anlagentechnik Gmbh & Co. Kg | Homogeneous pvd coating device and method |
| WO2007124879A3 (en) * | 2006-04-26 | 2008-07-17 | Systec System Und Anlagentechn | Homogeneous pvd coating device and method |
| GB2462890A (en) * | 2008-08-27 | 2010-03-03 | Teer Coatings Ltd | Magnetron sputter ion plating system and method for deposition of a coating |
| GB2462890B (en) * | 2008-08-27 | 2013-05-29 | Teer Coatings Ltd | Apparatus and a method for deposition of material to form a coating |
| US20120125766A1 (en) * | 2010-11-22 | 2012-05-24 | Zhurin Viacheslav V | Magnetron with non-equipotential cathode |
| CN102586750A (en) * | 2012-03-14 | 2012-07-18 | 无锡康力电子有限公司 | Planar moving target mechanism |
Also Published As
| Publication number | Publication date |
|---|---|
| GB2342361B (en) | 2003-06-04 |
| ITPN990060A1 (en) | 2001-01-16 |
| IT1311701B1 (en) | 2002-03-19 |
| CN1215094A (en) | 1999-04-28 |
| ITPN990060A0 (en) | 1999-07-16 |
| GB9903261D0 (en) | 1999-04-07 |
| CN1109127C (en) | 2003-05-21 |
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