IT1308465B1 - Struttura di cella di memoriadi tipo impilato, in particolare cellaferroelettrica - Google Patents

Struttura di cella di memoriadi tipo impilato, in particolare cellaferroelettrica

Info

Publication number
IT1308465B1
IT1308465B1 IT1999TO000356A ITTO990356A IT1308465B1 IT 1308465 B1 IT1308465 B1 IT 1308465B1 IT 1999TO000356 A IT1999TO000356 A IT 1999TO000356A IT TO990356 A ITTO990356 A IT TO990356A IT 1308465 B1 IT1308465 B1 IT 1308465B1
Authority
IT
Italy
Prior art keywords
cell
type memory
stacked type
memory cell
particular ferroelectric
Prior art date
Application number
IT1999TO000356A
Other languages
English (en)
Inventor
Chiara Corvasce
Raffaele Zambrano
Original Assignee
St Microelectronics Srl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by St Microelectronics Srl filed Critical St Microelectronics Srl
Priority to IT1999TO000356A priority Critical patent/IT1308465B1/it
Publication of ITTO990356A0 publication Critical patent/ITTO990356A0/it
Priority to US09/365,187 priority patent/US6300654B1/en
Publication of ITTO990356A1 publication Critical patent/ITTO990356A1/it
Priority to US09/911,637 priority patent/US6656801B2/en
Application granted granted Critical
Publication of IT1308465B1 publication Critical patent/IT1308465B1/it
Priority to US10/621,262 priority patent/US6872996B2/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/312—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor with a bit line higher than the capacitor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/48—Data lines or contacts therefor
    • H10B12/485—Bit line contacts
IT1999TO000356A 1999-04-30 1999-04-30 Struttura di cella di memoriadi tipo impilato, in particolare cellaferroelettrica IT1308465B1 (it)

Priority Applications (4)

Application Number Priority Date Filing Date Title
IT1999TO000356A IT1308465B1 (it) 1999-04-30 1999-04-30 Struttura di cella di memoriadi tipo impilato, in particolare cellaferroelettrica
US09/365,187 US6300654B1 (en) 1999-04-30 1999-08-02 Structure of a stacked memory cell, in particular a ferroelectric cell
US09/911,637 US6656801B2 (en) 1999-04-30 2001-07-23 Method of fabricating a ferroelectric stacked memory cell
US10/621,262 US6872996B2 (en) 1999-04-30 2003-07-15 Method of fabricating a ferroelectric stacked memory cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT1999TO000356A IT1308465B1 (it) 1999-04-30 1999-04-30 Struttura di cella di memoriadi tipo impilato, in particolare cellaferroelettrica

Publications (3)

Publication Number Publication Date
ITTO990356A0 ITTO990356A0 (it) 1999-04-30
ITTO990356A1 ITTO990356A1 (it) 2000-10-30
IT1308465B1 true IT1308465B1 (it) 2001-12-17

Family

ID=11417771

Family Applications (1)

Application Number Title Priority Date Filing Date
IT1999TO000356A IT1308465B1 (it) 1999-04-30 1999-04-30 Struttura di cella di memoriadi tipo impilato, in particolare cellaferroelettrica

Country Status (2)

Country Link
US (2) US6300654B1 (it)
IT (1) IT1308465B1 (it)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4421009B2 (ja) 1999-06-02 2010-02-24 株式会社東芝 強誘電体メモリ
US6844583B2 (en) * 2001-06-26 2005-01-18 Samsung Electronics Co., Ltd. Ferroelectric memory devices having expanded plate lines
KR100415543B1 (ko) * 2001-06-30 2004-01-24 주식회사 하이닉스반도체 강유전체 메모리 셀구조 및 그 제조방법
US6624457B2 (en) * 2001-07-20 2003-09-23 Intel Corporation Stepped structure for a multi-rank, stacked polymer memory device and method of making same
US6674321B1 (en) * 2001-10-31 2004-01-06 Agile Materials & Technologies, Inc. Circuit configuration for DC-biased capacitors
US20040259316A1 (en) * 2001-12-05 2004-12-23 Baki Acikel Fabrication of parallel plate capacitors using BST thin films
US6683341B1 (en) * 2001-12-05 2004-01-27 Agile Materials & Technologies, Inc. Voltage-variable capacitor with increased current conducting perimeter
FR2833783B1 (fr) * 2001-12-13 2004-03-12 St Microelectronics Sa Composant d'un circuit integre, pae exemple une cellule de memorisation, protege contre les aleas logiques, et procede de realisation associe
JP2003229541A (ja) * 2002-01-31 2003-08-15 Sony Corp 半導体記憶装置及びその製造方法
JP2004047943A (ja) * 2002-03-20 2004-02-12 Fujitsu Ltd 半導体装置
JP2004288696A (ja) * 2003-03-19 2004-10-14 Fujitsu Ltd 半導体装置の製造方法
JP4567314B2 (ja) 2003-10-24 2010-10-20 富士通セミコンダクター株式会社 半導体装置及びその製造方法
US7495886B2 (en) * 2005-07-27 2009-02-24 Agile Rf, Inc. Dampening of electric field-induced resonance in parallel plate capacitors
US20070024393A1 (en) * 2005-07-27 2007-02-01 Forse Roger J Tunable notch duplexer
US7304339B2 (en) * 2005-09-22 2007-12-04 Agile Rf, Inc. Passivation structure for ferroelectric thin-film devices
US7728377B2 (en) * 2005-09-23 2010-06-01 Agile Rf, Inc. Varactor design using area to perimeter ratio for improved tuning range
US7675388B2 (en) * 2006-03-07 2010-03-09 Agile Rf, Inc. Switchable tunable acoustic resonator using BST material
CN108172578A (zh) * 2017-12-26 2018-06-15 东芯半导体有限公司 一种减少设计面积的动态随机存储器单元及其制造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5350705A (en) * 1992-08-25 1994-09-27 National Semiconductor Corporation Ferroelectric memory cell arrangement having a split capacitor plate structure
KR950009813B1 (ko) * 1993-01-27 1995-08-28 삼성전자주식회사 반도체장치 및 그 제조방법
JPH0714993A (ja) * 1993-06-18 1995-01-17 Mitsubishi Electric Corp 半導体装置およびその製造方法
JPH07142597A (ja) * 1993-11-12 1995-06-02 Mitsubishi Electric Corp 半導体記憶装置およびその製造方法
JP3653107B2 (ja) * 1994-03-14 2005-05-25 株式会社ルネサステクノロジ 半導体装置およびその製造方法
US5654222A (en) * 1995-05-17 1997-08-05 Micron Technology, Inc. Method for forming a capacitor with electrically interconnected construction
JP3520144B2 (ja) * 1995-10-26 2004-04-19 株式会社ルネサステクノロジ 半導体記憶装置およびその製造方法
US6063656A (en) * 1997-04-18 2000-05-16 Micron Technology, Inc. Cell capacitors, memory cells, memory arrays, and method of fabrication

Also Published As

Publication number Publication date
US20020008269A1 (en) 2002-01-24
ITTO990356A1 (it) 2000-10-30
US6656801B2 (en) 2003-12-02
US6300654B1 (en) 2001-10-09
ITTO990356A0 (it) 1999-04-30

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