IT1289513B1 - Struttura integrata con dispositivo a soglia di conduzione inversa prestabilita - Google Patents
Struttura integrata con dispositivo a soglia di conduzione inversa prestabilitaInfo
- Publication number
- IT1289513B1 IT1289513B1 ITMI962728A IT1289513B1 IT 1289513 B1 IT1289513 B1 IT 1289513B1 IT MI962728 A ITMI962728 A IT MI962728A IT 1289513 B1 IT1289513 B1 IT 1289513B1
- Authority
- IT
- Italy
- Prior art keywords
- region
- zener diode
- references
- integrated structure
- insulated
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/866—Zener diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
- H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
- H01L27/0783—Lateral bipolar transistors in combination with diodes, or capacitors, or resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0804—Emitter regions of bipolar transistors
- H01L29/0808—Emitter regions of bipolar transistors of lateral transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/735—Lateral transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
- Control Of El Displays (AREA)
- Thin Film Transistor (AREA)
- Medicines Containing Antibodies Or Antigens For Use As Internal Diagnostic Agents (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT96MI002728 IT1289513B1 (it) | 1996-12-23 | 1996-12-23 | Struttura integrata con dispositivo a soglia di conduzione inversa prestabilita |
US08/984,910 US6020623A (en) | 1996-12-23 | 1997-12-04 | Integrated structure with device having a preset reverse conduction threshold |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT96MI002728 IT1289513B1 (it) | 1996-12-23 | 1996-12-23 | Struttura integrata con dispositivo a soglia di conduzione inversa prestabilita |
Publications (2)
Publication Number | Publication Date |
---|---|
ITMI962728A1 ITMI962728A1 (it) | 1998-06-23 |
IT1289513B1 true IT1289513B1 (it) | 1998-10-15 |
Family
ID=11375479
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT96MI002728 IT1289513B1 (it) | 1996-12-23 | 1996-12-23 | Struttura integrata con dispositivo a soglia di conduzione inversa prestabilita |
Country Status (2)
Country | Link |
---|---|
US (1) | US6020623A (it) |
IT (1) | IT1289513B1 (it) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9356012B2 (en) * | 2011-09-23 | 2016-05-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | High voltage ESD protection apparatus |
EP3804138B1 (en) * | 2018-05-30 | 2023-07-12 | Search For The Next Ltd | A circuit and device including a transistor and diode |
US11296247B2 (en) * | 2019-02-11 | 2022-04-05 | Allegro Microsystems, Llc | Photodetector with a buried layer |
US11217718B2 (en) | 2019-02-11 | 2022-01-04 | Allegro Microsystems, Llc | Photodetector with a buried layer |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3626390A (en) * | 1969-11-13 | 1971-12-07 | Ibm | Minimemory cell with epitaxial layer resistors and diode isolation |
US4319257A (en) * | 1980-01-16 | 1982-03-09 | Harris Corporation | Low thermal coefficient semiconductor device |
US4936928A (en) * | 1985-11-27 | 1990-06-26 | Raytheon Company | Semiconductor device |
US4766469A (en) * | 1986-01-06 | 1988-08-23 | Siliconix Incorporated | Integrated buried zener diode and temperature compensation transistor |
JPH09162298A (ja) * | 1995-12-12 | 1997-06-20 | Fujitsu Ltd | 半導体装置 |
-
1996
- 1996-12-23 IT IT96MI002728 patent/IT1289513B1/it active IP Right Grant
-
1997
- 1997-12-04 US US08/984,910 patent/US6020623A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US6020623A (en) | 2000-02-01 |
ITMI962728A1 (it) | 1998-06-23 |
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Legal Events
Date | Code | Title | Description |
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0001 | Granted |