IT1273495B - Dispositivo di controllo per laser a semiconduttore impulsato, compatto,ad elevata frequenza di ripetizione degli impulsi e potenza elevata - Google Patents

Dispositivo di controllo per laser a semiconduttore impulsato, compatto,ad elevata frequenza di ripetizione degli impulsi e potenza elevata

Info

Publication number
IT1273495B
IT1273495B ITMI950188A ITMI950188A IT1273495B IT 1273495 B IT1273495 B IT 1273495B IT MI950188 A ITMI950188 A IT MI950188A IT MI950188 A ITMI950188 A IT MI950188A IT 1273495 B IT1273495 B IT 1273495B
Authority
IT
Italy
Prior art keywords
pulse
compact
control device
semiconductor laser
repetition frequency
Prior art date
Application number
ITMI950188A
Other languages
English (en)
Inventor
Dong Chung Hyung
Original Assignee
Cosmo Laser Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cosmo Laser Inc filed Critical Cosmo Laser Inc
Publication of ITMI950188A0 publication Critical patent/ITMI950188A0/it
Publication of ITMI950188A1 publication Critical patent/ITMI950188A1/it
Application granted granted Critical
Publication of IT1273495B publication Critical patent/IT1273495B/it

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/53—Generators characterised by the type of circuit or by the means used for producing pulses by the use of an energy-accumulating element discharged through the load by a switching device controlled by an external signal and not incorporating positive feedback
    • H03K3/57—Generators characterised by the type of circuit or by the means used for producing pulses by the use of an energy-accumulating element discharged through the load by a switching device controlled by an external signal and not incorporating positive feedback the switching device being a semiconductor device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0428—Electrical excitation ; Circuits therefor for applying pulses to the laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
ITMI950188A 1994-02-04 1995-02-03 Dispositivo di controllo per laser a semiconduttore impulsato, compatto,ad elevata frequenza di ripetizione degli impulsi e potenza elevata IT1273495B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR19940002144 1994-02-04

Publications (3)

Publication Number Publication Date
ITMI950188A0 ITMI950188A0 (it) 1995-02-03
ITMI950188A1 ITMI950188A1 (it) 1996-08-03
IT1273495B true IT1273495B (it) 1997-07-08

Family

ID=19376847

Family Applications (1)

Application Number Title Priority Date Filing Date
ITMI950188A IT1273495B (it) 1994-02-04 1995-02-03 Dispositivo di controllo per laser a semiconduttore impulsato, compatto,ad elevata frequenza di ripetizione degli impulsi e potenza elevata

Country Status (7)

Country Link
CN (1) CN1114790A (it)
BR (1) BR9500547A (it)
DE (1) DE19503611A1 (it)
FR (1) FR2716041A1 (it)
GB (1) GB2286483A (it)
IT (1) IT1273495B (it)
TW (1) TW270261B (it)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0784365B1 (en) * 1996-01-12 2006-08-23 Kabushiki Kaisha Topcon Apparatus and method for producing a laser beam
DE19818561A1 (de) * 1998-04-25 1999-11-04 Jenoptik Jena Gmbh Impulslasersteuerung
DE10041079A1 (de) * 2000-08-22 2002-03-14 Osram Opto Semiconductors Gmbh Lasermodul mit Ansteuerschaltung
DE10058774A1 (de) * 2000-11-27 2002-06-13 Adva Ag Optische Sendeeinrichtung, insbesondere Laser-Sendeeinrichtung
US7616669B2 (en) 2003-06-30 2009-11-10 Electro Scientific Industries, Inc. High energy pulse suppression method
DE112012002844T5 (de) 2011-07-05 2014-04-24 Electronic Scientific Industries, Inc. Verfahren zur Laserbearbeitung mit einem thermisch stabilisierten akustooptischen Strahlablenker und thermisch stabilisiertes Hochgeschwindigkeits-Laserbearbeitungssystem
DE102012000672A1 (de) * 2011-10-21 2013-04-25 Lfk-Lenkflugkörpersysteme Gmbh Verteilte Energieversorgung eines Laserwaffensystems
CN111244752B (zh) * 2020-02-04 2023-05-30 复旦大学 一种激光雷达、半导体激光器的驱动模块及驱动方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE364403B (it) * 1972-07-03 1974-02-18 Bofors Ab
BR8906400A (pt) * 1989-12-07 1991-06-11 Brasilia Telecom Acoplador casador de impedancias
US5121401A (en) * 1990-05-03 1992-06-09 Motorola, Inc. Pulsed modulators utilizing transmission lines
US5155352A (en) * 1991-11-25 1992-10-13 The United States Of America As Represented By The Secretary Of The Army Optically activated sub-nanosecond hybrid pulser
US5280168A (en) * 1991-11-25 1994-01-18 The United States Of America As Represented By The Secretary Of The Army Tapered radial transmission line for an optically activated hybrid pulser

Also Published As

Publication number Publication date
BR9500547A (pt) 1995-10-17
ITMI950188A0 (it) 1995-02-03
ITMI950188A1 (it) 1996-08-03
CN1114790A (zh) 1996-01-10
DE19503611A1 (de) 1995-08-17
TW270261B (it) 1996-02-11
GB9501246D0 (en) 1995-03-15
FR2716041A1 (fr) 1995-08-11
GB2286483A (en) 1995-08-16

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Legal Events

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0001 Granted