FR2716041A1 - Commande de diode laser pulsée, compacte, à fréquence de répétition d'impulsion élevée et de grande puissance. - Google Patents

Commande de diode laser pulsée, compacte, à fréquence de répétition d'impulsion élevée et de grande puissance. Download PDF

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Publication number
FR2716041A1
FR2716041A1 FR9501294A FR9501294A FR2716041A1 FR 2716041 A1 FR2716041 A1 FR 2716041A1 FR 9501294 A FR9501294 A FR 9501294A FR 9501294 A FR9501294 A FR 9501294A FR 2716041 A1 FR2716041 A1 FR 2716041A1
Authority
FR
France
Prior art keywords
energy storage
energy
power
laser
pulse
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
FR9501294A
Other languages
English (en)
French (fr)
Inventor
Chung Hyung Dong
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
COSMO LASER Inc
Original Assignee
COSMO LASER Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by COSMO LASER Inc filed Critical COSMO LASER Inc
Publication of FR2716041A1 publication Critical patent/FR2716041A1/fr
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/53—Generators characterised by the type of circuit or by the means used for producing pulses by the use of an energy-accumulating element discharged through the load by a switching device controlled by an external signal and not incorporating positive feedback
    • H03K3/57—Generators characterised by the type of circuit or by the means used for producing pulses by the use of an energy-accumulating element discharged through the load by a switching device controlled by an external signal and not incorporating positive feedback the switching device being a semiconductor device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0428—Electrical excitation ; Circuits therefor for applying pulses to the laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Lasers (AREA)
FR9501294A 1994-02-04 1995-02-03 Commande de diode laser pulsée, compacte, à fréquence de répétition d'impulsion élevée et de grande puissance. Pending FR2716041A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR19940002144 1994-02-04

Publications (1)

Publication Number Publication Date
FR2716041A1 true FR2716041A1 (fr) 1995-08-11

Family

ID=19376847

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9501294A Pending FR2716041A1 (fr) 1994-02-04 1995-02-03 Commande de diode laser pulsée, compacte, à fréquence de répétition d'impulsion élevée et de grande puissance.

Country Status (7)

Country Link
CN (1) CN1114790A (it)
BR (1) BR9500547A (it)
DE (1) DE19503611A1 (it)
FR (1) FR2716041A1 (it)
GB (1) GB2286483A (it)
IT (1) IT1273495B (it)
TW (1) TW270261B (it)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0784365B1 (en) * 1996-01-12 2006-08-23 Kabushiki Kaisha Topcon Apparatus and method for producing a laser beam
DE19818561A1 (de) * 1998-04-25 1999-11-04 Jenoptik Jena Gmbh Impulslasersteuerung
DE10041079A1 (de) * 2000-08-22 2002-03-14 Osram Opto Semiconductors Gmbh Lasermodul mit Ansteuerschaltung
DE10058774A1 (de) * 2000-11-27 2002-06-13 Adva Ag Optische Sendeeinrichtung, insbesondere Laser-Sendeeinrichtung
US7616669B2 (en) 2003-06-30 2009-11-10 Electro Scientific Industries, Inc. High energy pulse suppression method
CN104159697B (zh) 2011-07-05 2017-02-15 伊雷克托科学工业股份有限公司 在使用过程中为声光射束偏转器和声光调制器提供温度稳定性的系统和方法
DE102012000672A1 (de) * 2011-10-21 2013-04-25 Lfk-Lenkflugkörpersysteme Gmbh Verteilte Energieversorgung eines Laserwaffensystems
CN111244752B (zh) * 2020-02-04 2023-05-30 复旦大学 一种激光雷达、半导体激光器的驱动模块及驱动方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1991009432A1 (en) * 1989-12-07 1991-06-27 TELECOMUNICAÇõES BRASILEIRAS S/A - TELEBRÁS Impedance-matching coupler
US5155352A (en) * 1991-11-25 1992-10-13 The United States Of America As Represented By The Secretary Of The Army Optically activated sub-nanosecond hybrid pulser
US5280168A (en) * 1991-11-25 1994-01-18 The United States Of America As Represented By The Secretary Of The Army Tapered radial transmission line for an optically activated hybrid pulser

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE364403B (it) * 1972-07-03 1974-02-18 Bofors Ab
US5121401A (en) * 1990-05-03 1992-06-09 Motorola, Inc. Pulsed modulators utilizing transmission lines

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1991009432A1 (en) * 1989-12-07 1991-06-27 TELECOMUNICAÇõES BRASILEIRAS S/A - TELEBRÁS Impedance-matching coupler
US5155352A (en) * 1991-11-25 1992-10-13 The United States Of America As Represented By The Secretary Of The Army Optically activated sub-nanosecond hybrid pulser
US5280168A (en) * 1991-11-25 1994-01-18 The United States Of America As Represented By The Secretary Of The Army Tapered radial transmission line for an optically activated hybrid pulser

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
E.O.GÖBEL ET AL.: "Direct gain modulation of a semiconductor laser by GaAs picosecond optoelectronic switch", APPLIED PHYSICS LETTERS, vol. 42, no. 1, NEW YORK, US, pages 25 - 27 *
J.VANDERWALL ET AL.: "Subnanosecond rise time pulses from injection lasers", IEEE JOURNAL OF QUANTUM ELECTRONICS, vol. 10, no. 7, NEW YORK, US, pages 570 - 572 *

Also Published As

Publication number Publication date
ITMI950188A1 (it) 1996-08-03
DE19503611A1 (de) 1995-08-17
TW270261B (it) 1996-02-11
ITMI950188A0 (it) 1995-02-03
CN1114790A (zh) 1996-01-10
IT1273495B (it) 1997-07-08
GB9501246D0 (en) 1995-03-15
BR9500547A (pt) 1995-10-17
GB2286483A (en) 1995-08-16

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