IT1249525B - Dispositivo di protezione della perdita della massa particolarmente per circuiti integrati mos - Google Patents

Dispositivo di protezione della perdita della massa particolarmente per circuiti integrati mos

Info

Publication number
IT1249525B
IT1249525B ITMI910409A ITMI910409A IT1249525B IT 1249525 B IT1249525 B IT 1249525B IT MI910409 A ITMI910409 A IT MI910409A IT MI910409 A ITMI910409 A IT MI910409A IT 1249525 B IT1249525 B IT 1249525B
Authority
IT
Italy
Prior art keywords
protection device
terminal
integrated circuits
substrate
mass loss
Prior art date
Application number
ITMI910409A
Other languages
English (en)
Inventor
Francesco Colandrea
Vanni Poletto
Original Assignee
Sgs Thomson Microelectronics
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Thomson Microelectronics filed Critical Sgs Thomson Microelectronics
Priority to ITMI910409A priority Critical patent/IT1249525B/it
Publication of ITMI910409A0 publication Critical patent/ITMI910409A0/it
Priority to EP92102151A priority patent/EP0519156A1/en
Priority to JP4029340A priority patent/JPH0575030A/ja
Publication of ITMI910409A1 publication Critical patent/ITMI910409A1/it
Application granted granted Critical
Publication of IT1249525B publication Critical patent/IT1249525B/it

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/06—Modifications for ensuring a fully conducting state
    • H03K17/063—Modifications for ensuring a fully conducting state in field-effect transistor switches

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

Dispositivo di protezione dalla perdita della massa particolarmente per circuiti integrati MOS, il quale comprende un dispositivo high side driver che presenta un morsetto d'ingresso, un substrato riferito a massa ed un morsetto di uscita per il pilotaggio di carichi esterni al dispositivo high side driver stesso. Il morsetto di uscita è realizzato mediante il morsetto di source di un transistore MOS. Al morsetto di uscita è collegato almeno un morsetto di un carico, il cui altro morsetto è riferito a massa. Il dispositivo di protezione comprende almeno un diodo collegante il substrato al morsetto di uscita. Questo diodo collega il substrato alla massa attraverso il carico nel caso che il riferimento a massa del substrato venga interrotto.
ITMI910409A 1991-02-18 1991-02-18 Dispositivo di protezione della perdita della massa particolarmente per circuiti integrati mos IT1249525B (it)

Priority Applications (3)

Application Number Priority Date Filing Date Title
ITMI910409A IT1249525B (it) 1991-02-18 1991-02-18 Dispositivo di protezione della perdita della massa particolarmente per circuiti integrati mos
EP92102151A EP0519156A1 (en) 1991-02-18 1992-02-10 Ground loss protection device particularly for mos integrated circuits
JP4029340A JPH0575030A (ja) 1991-02-18 1992-02-17 接地損失保護装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
ITMI910409A IT1249525B (it) 1991-02-18 1991-02-18 Dispositivo di protezione della perdita della massa particolarmente per circuiti integrati mos

Publications (3)

Publication Number Publication Date
ITMI910409A0 ITMI910409A0 (it) 1991-02-18
ITMI910409A1 ITMI910409A1 (it) 1992-08-18
IT1249525B true IT1249525B (it) 1995-02-23

Family

ID=11358618

Family Applications (1)

Application Number Title Priority Date Filing Date
ITMI910409A IT1249525B (it) 1991-02-18 1991-02-18 Dispositivo di protezione della perdita della massa particolarmente per circuiti integrati mos

Country Status (3)

Country Link
EP (1) EP0519156A1 (it)
JP (1) JPH0575030A (it)
IT (1) IT1249525B (it)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4428115C2 (de) * 1994-08-09 1997-10-16 Hella Kg Hueck & Co Steuergerät mit einer Schaltungsanordnung zum Schutz des Steuergerätes bei Unterbrechung der Steuergerätemasse
DE10002537A1 (de) * 2000-01-21 2001-07-26 Volkswagen Ag Verfahren zur Detektion einer fehlerhaften Masseverbindung in einer elektrischen Einrichtung insbesondere eines Kraftfahrzeugs
DE10249599B4 (de) * 2002-10-24 2007-12-27 Knorr-Bremse Systeme für Nutzfahrzeuge GmbH Sicherheitsschaltung für analoge Sensoren
JP4473294B2 (ja) * 2007-09-05 2010-06-02 矢崎総業株式会社 電源制御装置
CN103582824B (zh) 2011-05-27 2016-08-17 飞思卡尔半导体公司 接地丢失监控电路以及包括其的集成电路
US9851392B2 (en) 2013-01-10 2017-12-26 Nxp Usa, Inc. Ground-loss detection circuit

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4691129A (en) * 1986-03-19 1987-09-01 Siemens Aktiengesellschaft Drive circuit for a power MOSFET with source-side load
US4725912A (en) * 1986-06-16 1988-02-16 Motorola Inc. Power MOS loss of ground protection
JPH01147854A (ja) * 1987-12-04 1989-06-09 Nissan Motor Co Ltd 半導体装置
US4808839A (en) * 1988-04-04 1989-02-28 Motorola, Inc. Power field effect transistor driver circuit for protection from overvoltages
DE3827730C1 (it) * 1988-08-16 1989-12-28 Hella Kg Hueck & Co, 4780 Lippstadt, De
JP2504586B2 (ja) * 1989-10-31 1996-06-05 東芝マイクロエレクトロニクス株式会社 接地外れ保護回路を有する電子回路装置

Also Published As

Publication number Publication date
ITMI910409A0 (it) 1991-02-18
JPH0575030A (ja) 1993-03-26
EP0519156A1 (en) 1992-12-23
ITMI910409A1 (it) 1992-08-18

Similar Documents

Publication Publication Date Title
TW349277B (en) Semiconductor integrated circuit
EP0592111A3 (en) Multichip module for integrated semiconductor components with a maximum of input and output options.
DE69333821D1 (de) Integrierte Halbleiterschaltung mit Eingangs/Ausgangschnittstelle geeignet für niedrige Amplituden
EP0260125A3 (en) Electrostatic discharge protection circuit
DE68918040T2 (de) Integrierte Halbleiterschaltung mit Ein- und Ausgangsanschlüssen, die einen unabhängigen Verbindungstest erlauben.
KR940010463A (ko) 저(low)전압 전력 공급원상에서 동작하는 전하 펌프
KR970072397A (ko) 반도체 장치
EP0697732A3 (en) Driving circuit module
KR940704085A (ko) 모스펫(MOSFET) 전력용 트랜지스터 보호회로(Circuit for protecting a MOSFET power transistor)
KR960039342A (ko) 반도체 집적 회로
KR920017126A (ko) 복수의 인터페이스 레벨을 출력 가능한 반도체 집적 회로장치
IT1249525B (it) Dispositivo di protezione della perdita della massa particolarmente per circuiti integrati mos
KR970063275A (ko) 반도체집적회로 및 그것을 사용한 회로장치
TW200504934A (en) Semiconductor integrated circuit device
MX9600724A (es) Fuente de luz semiconductora que tiene una salida optica de alta energia espectralmente alta.
JPS6471216A (en) Buffer circuit
KR970072681A (ko) 기판 바이어스가 분리된 회로에서의 정전기 보호회로
TW333710B (en) The semiconductor IC device
DE59902368D1 (de) Schutzschaltung auf einer integrierten schaltung
EP0292327A3 (en) Electrostatic breakdown protection circuits
KR960042745A (ko) 다수개의 스위칭 수단을 가지는 다용도 패드를 구비한 반도체 메모리장치
KR930006875A (ko) 집적회로
KR970024162A (ko) 풀업 또는 풀다운 저항을 갖는 반도체 장치(a semiconductor device having pull-up or pull-down resistance)
TW333636B (en) The semiconductor IC
EP1261127A3 (en) Semiconductor integrated circuit device

Legal Events

Date Code Title Description
0001 Granted
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19950224