IT1244563B - Un metodo per formare uno strato di metallo in un dispositivo a semiconduttore. - Google Patents
Un metodo per formare uno strato di metallo in un dispositivo a semiconduttore.Info
- Publication number
- IT1244563B IT1244563B IT02151590A IT2151590A IT1244563B IT 1244563 B IT1244563 B IT 1244563B IT 02151590 A IT02151590 A IT 02151590A IT 2151590 A IT2151590 A IT 2151590A IT 1244563 B IT1244563 B IT 1244563B
- Authority
- IT
- Italy
- Prior art keywords
- metal
- forming
- layer
- semiconductor device
- contact hole
- Prior art date
Links
- 239000002184 metal Substances 0.000 title abstract 5
- 238000000034 method Methods 0.000 title abstract 5
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000000137 annealing Methods 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019900010027A KR930005485B1 (ko) | 1990-07-03 | 1990-07-03 | 금속 배선층 형성 방법 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| IT9021515A0 IT9021515A0 (it) | 1990-09-19 |
| IT9021515A1 IT9021515A1 (it) | 1992-03-19 |
| IT1244563B true IT1244563B (it) | 1994-07-28 |
Family
ID=19300844
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT02151590A IT1244563B (it) | 1990-07-03 | 1990-09-19 | Un metodo per formare uno strato di metallo in un dispositivo a semiconduttore. |
Country Status (2)
| Country | Link |
|---|---|
| KR (1) | KR930005485B1 (it) |
| IT (1) | IT1244563B (it) |
-
1990
- 1990-07-03 KR KR1019900010027A patent/KR930005485B1/ko not_active IP Right Cessation
- 1990-09-19 IT IT02151590A patent/IT1244563B/it active IP Right Grant
Also Published As
| Publication number | Publication date |
|---|---|
| IT9021515A0 (it) | 1990-09-19 |
| KR930005485B1 (ko) | 1993-06-22 |
| IT9021515A1 (it) | 1992-03-19 |
| KR920003477A (ko) | 1992-02-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR960002059B1 (ko) | 반도체 장치의 제조방법 | |
| KR940016754A (ko) | 전면성 텅스텐 플러그 제조방법 | |
| JPS5562733A (en) | Method of forming narrow region on silicon substrate | |
| KR960004095B1 (en) | Manufacturing method of metal plug in contact-hole | |
| MY127027A (en) | Method of forming a conductive pattern on dielectric substrates | |
| IT1244563B (it) | Un metodo per formare uno strato di metallo in un dispositivo a semiconduttore. | |
| TW345743B (en) | Method for forming side contact of semiconductor device | |
| ATE46791T1 (de) | Verfahren zum selektiven auffuellen von in isolationsschichten geaetzten kontaktloechern mit metallisch leitenden materialien bei der herstellung von hoechstintegrierten halbleiterschaltungen sowie eine vorrichtung zur durchfuehrung des verfahrens. | |
| ATE136159T1 (de) | Verfahren zum herstellen einer abgeschiedenen schicht, und verfahren zum herstellen einer halbleitervorrichtung | |
| EP0392725A3 (en) | Method for fabricating integrated circuits with silicide | |
| TW370693B (en) | Method for forming a contact to a substrate | |
| KR900001011A (ko) | 절연막의 제조방법 | |
| MY110288A (en) | Process for forming deposited film and process for preparing semiconductor device. | |
| JPS5764927A (en) | Manufacture of semiconductor device | |
| TW365700B (en) | Method of manufacture of plugs | |
| KR970052190A (ko) | 반도체 소자의 금속층 형성방법 | |
| JPS6415917A (en) | Forming method of high melting-point metallic film | |
| KR960004075B1 (en) | Method of forming metal plug | |
| TW340252B (en) | Process of forming a via hole | |
| KR960016232B1 (en) | Metal silicide forming method | |
| JPS6411348A (en) | Manufacture of semiconductor device | |
| JPS54149463A (en) | Selective diffusion method aluminum | |
| KR970000959B1 (en) | Contact plug forming method of semiconductor device | |
| KR870009448A (ko) | 박막형성방법 | |
| TW340253B (en) | Process for producing contact holes |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 0001 | Granted | ||
| TA | Fee payment date (situation as of event date), data collected since 19931001 |
Effective date: 19970926 |