KR920003477A - 금속 배선층 형성 방법 - Google Patents
금속 배선층 형성 방법Info
- Publication number
- KR920003477A KR920003477A KR1019900010027A KR900010027A KR920003477A KR 920003477 A KR920003477 A KR 920003477A KR 1019900010027 A KR1019900010027 A KR 1019900010027A KR 900010027 A KR900010027 A KR 900010027A KR 920003477 A KR920003477 A KR 920003477A
- Authority
- KR
- South Korea
- Prior art keywords
- wiring layer
- metal wiring
- formation method
- layer formation
- metal
- Prior art date
Links
- 230000015572 biosynthetic process Effects 0.000 title 1
- 239000002184 metal Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019900010027A KR930005485B1 (ko) | 1990-07-03 | 1990-07-03 | 금속 배선층 형성 방법 |
| DE4028776A DE4028776C2 (de) | 1990-07-03 | 1990-09-11 | Verfahren zur Bildung einer metallischen Verdrahtungsschicht und Füllen einer Kontaktöffnung in einem Halbleiterbauelement |
| IT02151590A IT1244563B (it) | 1990-07-03 | 1990-09-19 | Un metodo per formare uno strato di metallo in un dispositivo a semiconduttore. |
| JP2254053A JPH0465831A (ja) | 1990-07-03 | 1990-09-20 | 金属配線層形成方法 |
| GB9020519A GB2245596B (en) | 1990-07-03 | 1990-09-20 | A method of forming a metal wiring layer |
| FR9011624A FR2664295B1 (fr) | 1990-07-03 | 1990-09-20 | Procede de formation d'une couche metallique a travers un trou de contact. |
| US07/897,294 US5318923A (en) | 1990-07-03 | 1992-06-11 | Method for forming a metal wiring layer in a semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019900010027A KR930005485B1 (ko) | 1990-07-03 | 1990-07-03 | 금속 배선층 형성 방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR920003477A true KR920003477A (ko) | 1992-02-29 |
| KR930005485B1 KR930005485B1 (ko) | 1993-06-22 |
Family
ID=19300844
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019900010027A KR930005485B1 (ko) | 1990-07-03 | 1990-07-03 | 금속 배선층 형성 방법 |
Country Status (2)
| Country | Link |
|---|---|
| KR (1) | KR930005485B1 (ko) |
| IT (1) | IT1244563B (ko) |
-
1990
- 1990-07-03 KR KR1019900010027A patent/KR930005485B1/ko not_active IP Right Cessation
- 1990-09-19 IT IT02151590A patent/IT1244563B/it active IP Right Grant
Also Published As
| Publication number | Publication date |
|---|---|
| IT1244563B (it) | 1994-07-28 |
| IT9021515A0 (it) | 1990-09-19 |
| KR930005485B1 (ko) | 1993-06-22 |
| IT9021515A1 (it) | 1992-03-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| G160 | Decision to publish patent application | ||
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant | ||
| FPAY | Annual fee payment |
Payment date: 20100528 Year of fee payment: 18 |
|
| EXPY | Expiration of term |