IT1239989B - Struttura di cella programmata,a bassa capacita' e ad elevata tensione di rottura, per circuiti di memoria a sola lettura - Google Patents

Struttura di cella programmata,a bassa capacita' e ad elevata tensione di rottura, per circuiti di memoria a sola lettura

Info

Publication number
IT1239989B
IT1239989B IT19903A IT1990390A IT1239989B IT 1239989 B IT1239989 B IT 1239989B IT 19903 A IT19903 A IT 19903A IT 1990390 A IT1990390 A IT 1990390A IT 1239989 B IT1239989 B IT 1239989B
Authority
IT
Italy
Prior art keywords
programmed
read
cell structure
memory circuits
low capacity
Prior art date
Application number
IT19903A
Other languages
English (en)
Italian (it)
Other versions
IT9019903A1 (it
IT9019903A0 (it
Inventor
Giancarlo Ginami
Enrico Laurin
Silvia Lucherini
Bruno Vajana
Original Assignee
Sgs Thomson Microelectronics
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Thomson Microelectronics filed Critical Sgs Thomson Microelectronics
Priority to IT19903A priority Critical patent/IT1239989B/it
Publication of IT9019903A0 publication Critical patent/IT9019903A0/it
Priority to DE69112882T priority patent/DE69112882T2/de
Priority to EP91104217A priority patent/EP0450389B1/en
Priority to JP8596791A priority patent/JPH0582758A/ja
Publication of IT9019903A1 publication Critical patent/IT9019903A1/it
Priority to US08/139,800 priority patent/US5486487A/en
Application granted granted Critical
Publication of IT1239989B publication Critical patent/IT1239989B/it

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
    • G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
IT19903A 1990-03-30 1990-03-30 Struttura di cella programmata,a bassa capacita' e ad elevata tensione di rottura, per circuiti di memoria a sola lettura IT1239989B (it)

Priority Applications (5)

Application Number Priority Date Filing Date Title
IT19903A IT1239989B (it) 1990-03-30 1990-03-30 Struttura di cella programmata,a bassa capacita' e ad elevata tensione di rottura, per circuiti di memoria a sola lettura
DE69112882T DE69112882T2 (de) 1990-03-30 1991-03-19 Zellstruktur mit niedriger Kapazität und mit hoher Durchbruchspannung programmiert für Festwertspeicherschaltungen.
EP91104217A EP0450389B1 (en) 1990-03-30 1991-03-19 A low-capacitance, high breakdown voltage programmed cell structure for read-only memory circuits
JP8596791A JPH0582758A (ja) 1990-03-30 1991-03-27 Ｒｏｍ回路用プログラムセル構造
US08/139,800 US5486487A (en) 1990-03-30 1993-10-19 Method for adjusting the threshold of a read-only memory to achieve low capacitance and high breakdown voltage

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT19903A IT1239989B (it) 1990-03-30 1990-03-30 Struttura di cella programmata,a bassa capacita' e ad elevata tensione di rottura, per circuiti di memoria a sola lettura

Publications (3)

Publication Number Publication Date
IT9019903A0 IT9019903A0 (it) 1990-03-30
IT9019903A1 IT9019903A1 (it) 1991-09-30
IT1239989B true IT1239989B (it) 1993-11-27

Family

ID=11162207

Family Applications (1)

Application Number Title Priority Date Filing Date
IT19903A IT1239989B (it) 1990-03-30 1990-03-30 Struttura di cella programmata,a bassa capacita' e ad elevata tensione di rottura, per circuiti di memoria a sola lettura

Country Status (4)

Country Link
EP (1) EP0450389B1 (OSRAM)
JP (1) JPH0582758A (OSRAM)
DE (1) DE69112882T2 (OSRAM)
IT (1) IT1239989B (OSRAM)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5291435A (en) * 1993-01-07 1994-03-01 Yu Shih Chiang Read-only memory cell

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4268950A (en) * 1978-06-05 1981-05-26 Texas Instruments Incorporated Post-metal ion implant programmable MOS read only memory
US4359817A (en) * 1981-05-28 1982-11-23 General Motors Corporation Method for making late programmable read-only memory devices
JPS5830154A (ja) * 1981-08-17 1983-02-22 Toshiba Corp 固定記憶半導体装置およびその製造方法

Also Published As

Publication number Publication date
DE69112882T2 (de) 1996-02-15
DE69112882D1 (de) 1995-10-19
EP0450389A3 (OSRAM) 1994-02-23
EP0450389B1 (en) 1995-09-13
JPH0582758A (ja) 1993-04-02
IT9019903A1 (it) 1991-09-30
EP0450389A2 (en) 1991-10-09
IT9019903A0 (it) 1990-03-30

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Legal Events

Date Code Title Description
0001 Granted
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19970329