JPH0582758A - Ｒｏｍ回路用プログラムセル構造 - Google Patents

Ｒｏｍ回路用プログラムセル構造

Info

Publication number
JPH0582758A
JPH0582758A JP8596791A JP8596791A JPH0582758A JP H0582758 A JPH0582758 A JP H0582758A JP 8596791 A JP8596791 A JP 8596791A JP 8596791 A JP8596791 A JP 8596791A JP H0582758 A JPH0582758 A JP H0582758A
Authority
JP
Japan
Prior art keywords
region
cell structure
cell
rom circuit
program
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8596791A
Other languages
English (en)
Japanese (ja)
Inventor
Giancarlo Ginami
ジナミ ジアンカルロ
Enrico Laurin
ラウリン エンリコ
Silvia Lucherini
ルツチエリーニ シルヴイア
Bruno Vajana
ヴアヤーナ ブルーノ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
STMicroelectronics lnc USA
Original Assignee
SGS Thomson Microelectronics SRL
SGS Thomson Microelectronics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SGS Thomson Microelectronics SRL, SGS Thomson Microelectronics Inc filed Critical SGS Thomson Microelectronics SRL
Publication of JPH0582758A publication Critical patent/JPH0582758A/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
    • G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices

Landscapes

  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)
JP8596791A 1990-03-30 1991-03-27 Ｒｏｍ回路用プログラムセル構造 Pending JPH0582758A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
IT19903A/90 1990-03-30
IT19903A IT1239989B (it) 1990-03-30 1990-03-30 Struttura di cella programmata,a bassa capacita' e ad elevata tensione di rottura, per circuiti di memoria a sola lettura

Publications (1)

Publication Number Publication Date
JPH0582758A true JPH0582758A (ja) 1993-04-02

Family

ID=11162207

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8596791A Pending JPH0582758A (ja) 1990-03-30 1991-03-27 Ｒｏｍ回路用プログラムセル構造

Country Status (4)

Country Link
EP (1) EP0450389B1 (OSRAM)
JP (1) JPH0582758A (OSRAM)
DE (1) DE69112882T2 (OSRAM)
IT (1) IT1239989B (OSRAM)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5291435A (en) * 1993-01-07 1994-03-01 Yu Shih Chiang Read-only memory cell

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4268950A (en) * 1978-06-05 1981-05-26 Texas Instruments Incorporated Post-metal ion implant programmable MOS read only memory
US4359817A (en) * 1981-05-28 1982-11-23 General Motors Corporation Method for making late programmable read-only memory devices
JPS5830154A (ja) * 1981-08-17 1983-02-22 Toshiba Corp 固定記憶半導体装置およびその製造方法

Also Published As

Publication number Publication date
DE69112882T2 (de) 1996-02-15
DE69112882D1 (de) 1995-10-19
EP0450389A3 (OSRAM) 1994-02-23
EP0450389B1 (en) 1995-09-13
IT1239989B (it) 1993-11-27
IT9019903A1 (it) 1991-09-30
EP0450389A2 (en) 1991-10-09
IT9019903A0 (it) 1990-03-30

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