IT1231424B - Dispositivo elettronico a semiconduttore, in particolare un transistore ad effetto di campo mos silicon-gate, per alte tensioni di alimentazione - Google Patents

Dispositivo elettronico a semiconduttore, in particolare un transistore ad effetto di campo mos silicon-gate, per alte tensioni di alimentazione

Info

Publication number
IT1231424B
IT1231424B IT8722130A IT2213087A IT1231424B IT 1231424 B IT1231424 B IT 1231424B IT 8722130 A IT8722130 A IT 8722130A IT 2213087 A IT2213087 A IT 2213087A IT 1231424 B IT1231424 B IT 1231424B
Authority
IT
Italy
Prior art keywords
electronic device
effect transistor
high power
gate field
semiconductor electronic
Prior art date
Application number
IT8722130A
Other languages
English (en)
Other versions
IT8722130A0 (it
Inventor
Giuseppe Paolo Crisenza
Gabriella Fontana
Paolo Picco
Original Assignee
Sgs Microelettronica Spa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Microelettronica Spa filed Critical Sgs Microelettronica Spa
Priority to IT8722130A priority Critical patent/IT1231424B/it
Publication of IT8722130A0 publication Critical patent/IT8722130A0/it
Priority to EP88115209A priority patent/EP0309828A3/en
Priority to JP63247572A priority patent/JPH01166563A/ja
Application granted granted Critical
Publication of IT1231424B publication Critical patent/IT1231424B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
    • H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
    • H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
IT8722130A 1987-10-02 1987-10-02 Dispositivo elettronico a semiconduttore, in particolare un transistore ad effetto di campo mos silicon-gate, per alte tensioni di alimentazione IT1231424B (it)

Priority Applications (3)

Application Number Priority Date Filing Date Title
IT8722130A IT1231424B (it) 1987-10-02 1987-10-02 Dispositivo elettronico a semiconduttore, in particolare un transistore ad effetto di campo mos silicon-gate, per alte tensioni di alimentazione
EP88115209A EP0309828A3 (en) 1987-10-02 1988-09-16 An electronic semiconductor device, in particular a silicon-gate field-effect mos transistor, for high input voltages
JP63247572A JPH01166563A (ja) 1987-10-02 1988-10-03 半導体デバイス

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT8722130A IT1231424B (it) 1987-10-02 1987-10-02 Dispositivo elettronico a semiconduttore, in particolare un transistore ad effetto di campo mos silicon-gate, per alte tensioni di alimentazione

Publications (2)

Publication Number Publication Date
IT8722130A0 IT8722130A0 (it) 1987-10-02
IT1231424B true IT1231424B (it) 1991-12-04

Family

ID=11191942

Family Applications (1)

Application Number Title Priority Date Filing Date
IT8722130A IT1231424B (it) 1987-10-02 1987-10-02 Dispositivo elettronico a semiconduttore, in particolare un transistore ad effetto di campo mos silicon-gate, per alte tensioni di alimentazione

Country Status (3)

Country Link
EP (1) EP0309828A3 (it)
JP (1) JPH01166563A (it)
IT (1) IT1231424B (it)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6822292B2 (en) 2001-11-21 2004-11-23 Intersil Americas Inc. Lateral MOSFET structure of an integrated circuit having separated device regions

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52131483A (en) * 1976-04-28 1977-11-04 Hitachi Ltd Mis-type semiconductor device
JPS61171165A (ja) * 1985-01-25 1986-08-01 Nissan Motor Co Ltd Ｍｏｓトランジスタ

Also Published As

Publication number Publication date
EP0309828A2 (en) 1989-04-05
IT8722130A0 (it) 1987-10-02
JPH01166563A (ja) 1989-06-30
EP0309828A3 (en) 1989-12-27

Similar Documents

Publication Publication Date Title
HU9402061D0 (en) Semiconductor device with mos transistor provided with an extended drain region for high voltages
DE69521579D1 (de) Herstellungsverfahren für MOS-Halbleiterbauelement
DE69101386D1 (de) Strommess-Schaltung in einem MOS-Leistungstransistor.
DE3782367D1 (de) Mos-halbleiterschaltung.
DE69024007D1 (de) Halbleiteranordnung aus amorphem Silizium.
IT8125123A0 (it) Dispositivo semiconduttore astruttura planare per alte tensioni.
DE3885263D1 (de) Eingangsschutzschaltung für eine MOS-Halbleitervorrichtung.
DE3866016D1 (de) Mos-transistor-brueckenschaltung.
IT8424126A0 (it) Circuito a ponte di transistori mos di potenza a canale n integrato eprocedimento per la sua fabbricazione.
KR890012388A (ko) Mis형 반도체 집적회로장치
IT1188309B (it) Procedimento per la fabbricazione di dispositivi elettronici integrati,in particolare transistori mos a canale p ad alta tensione
DE69504215D1 (de) Halbleiterbauelement vom MOS-Typ
DE69019438D1 (de) MOS-Typ-Halbleiterspeicheranordnung.
ES557586A0 (es) Perfeccionamientos en un dispositivo transistor mos
DE69105621D1 (de) Herstellungsverfahren eines Kanals in MOS-Halbleiteranordnung.
DE69025278D1 (de) Stromdetektionsschaltung für MOS-Leistungstransistor
IT8125510A0 (it) Dispositivo a semiconduttore, in particolare transistor di potenza.
DE69131235D1 (de) Halbleitende Hochleistungsverstärkervorrichtung
IT1214606B (it) Dispositivo integrato di protezione dinamica, in particolare per circuiti integrati con ingresso in tecnologia mos.
DE3886490D1 (de) Halbleitende Hochleistungsverstärker-Vorrichtung.
DE58905356D1 (de) MOS-Halbleiterbauelement für hohe Sperrspannung.
KR880002275A (ko) 종형 mos 반도체장치
DE69022164D1 (de) Tragbare Halbleiterspeicheranordnung.
FR2770030B1 (fr) Dispositif a semiconducteur comprenant un transistor mos et procede de fabrication
KR900010780A (ko) Mos형 반도체기억장치

Legal Events

Date Code Title Description
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19971030