IT1217372B - Procedimento per la programmazione di memorie rom in tecnologia mos ecmos - Google Patents

Procedimento per la programmazione di memorie rom in tecnologia mos ecmos

Info

Publication number
IT1217372B
IT1217372B IT19989/88A IT1998988A IT1217372B IT 1217372 B IT1217372 B IT 1217372B IT 19989/88 A IT19989/88 A IT 19989/88A IT 1998988 A IT1998988 A IT 1998988A IT 1217372 B IT1217372 B IT 1217372B
Authority
IT
Italy
Prior art keywords
ecmos
mos
programming
procedure
technology
Prior art date
Application number
IT19989/88A
Other languages
English (en)
Other versions
IT8819989A0 (it
Inventor
Roland Quirinus Bekkering
Manlio Sergio Cereda
Original Assignee
Sgs Thomson Microelectronics
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Thomson Microelectronics filed Critical Sgs Thomson Microelectronics
Priority to IT19989/88A priority Critical patent/IT1217372B/it
Publication of IT8819989A0 publication Critical patent/IT8819989A0/it
Priority to EP89104165A priority patent/EP0335148A3/en
Priority to US07/322,132 priority patent/US5091329A/en
Priority to JP1076386A priority patent/JPH0210766A/ja
Application granted granted Critical
Publication of IT1217372B publication Critical patent/IT1217372B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H10B20/27—ROM only
    • H10B20/30—ROM only having the source region and the drain region on the same level, e.g. lateral transistors
    • H10B20/38—Doping programmed, e.g. mask ROM
    • H10B20/387—Source region or drain region doping programmed
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
IT19989/88A 1988-03-28 1988-03-28 Procedimento per la programmazione di memorie rom in tecnologia mos ecmos IT1217372B (it)

Priority Applications (4)

Application Number Priority Date Filing Date Title
IT19989/88A IT1217372B (it) 1988-03-28 1988-03-28 Procedimento per la programmazione di memorie rom in tecnologia mos ecmos
EP89104165A EP0335148A3 (en) 1988-03-28 1989-03-09 Method for programming mos and cmos rom memories
US07/322,132 US5091329A (en) 1988-03-28 1989-03-13 Method for programming mos and cmos rom memories
JP1076386A JPH0210766A (ja) 1988-03-28 1989-03-27 Ｍｏｓおよびｃｍｏｓｒｏｍメモリをプログラミングする方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT19989/88A IT1217372B (it) 1988-03-28 1988-03-28 Procedimento per la programmazione di memorie rom in tecnologia mos ecmos

Publications (2)

Publication Number Publication Date
IT8819989A0 IT8819989A0 (it) 1988-03-28
IT1217372B true IT1217372B (it) 1990-03-22

Family

ID=11162894

Family Applications (1)

Application Number Title Priority Date Filing Date
IT19989/88A IT1217372B (it) 1988-03-28 1988-03-28 Procedimento per la programmazione di memorie rom in tecnologia mos ecmos

Country Status (4)

Country Link
US (1) US5091329A (it)
EP (1) EP0335148A3 (it)
JP (1) JPH0210766A (it)
IT (1) IT1217372B (it)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1239707B (it) * 1990-03-15 1993-11-15 St Microelectrics Srl Processo per la realizzazione di una cella di memoria rom a bassa capacita' di drain
US5200355A (en) * 1990-12-10 1993-04-06 Samsung Electronics Co., Ltd. Method for manufacturing a mask read only memory device
EP0575688B1 (en) * 1992-06-26 1998-05-27 STMicroelectronics S.r.l. Programming of LDD-ROM cells
US5380676A (en) * 1994-05-23 1995-01-10 United Microelectronics Corporation Method of manufacturing a high density ROM
JPH08139208A (ja) * 1994-11-04 1996-05-31 Toyota Motor Corp 不揮発性メモリの製造システム及びその製造方法
US5538914A (en) * 1995-08-03 1996-07-23 Taiwan Semiconductor Manufacturing Company LDD method of coding mask ROM device and LDD coded mask ROM device produced thereby
TW335537B (en) * 1996-11-25 1998-07-01 United Microelectronics Corp The ROM unit and manufacture method
US6380016B2 (en) * 1998-06-23 2002-04-30 Ross Alan Kohler Method for forming programmable CMOS ROM devices
KR100546360B1 (ko) 2003-08-06 2006-01-26 삼성전자주식회사 Ｎｏｒ형 마스크 ｒｏｍ 소자 및 이를 포함하는 반도체소자의 제조 방법

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5529116A (en) * 1978-08-23 1980-03-01 Hitachi Ltd Manufacture of complementary misic
EP0054102A3 (en) * 1980-12-11 1983-07-27 Rockwell International Corporation Very high density cells comprising a rom and method of manufacturing same
US4406049A (en) * 1980-12-11 1983-09-27 Rockwell International Corporation Very high density cells comprising a ROM and method of manufacturing same
US4359817A (en) * 1981-05-28 1982-11-23 General Motors Corporation Method for making late programmable read-only memory devices
GB2102623B (en) * 1981-06-30 1985-04-11 Tokyo Shibaura Electric Co Method of manufacturing a semiconductors memory device
US4536944A (en) * 1982-12-29 1985-08-27 International Business Machines Corporation Method of making ROM/PLA semiconductor device by late stage personalization
US4536947A (en) * 1983-07-14 1985-08-27 Intel Corporation CMOS process for fabricating integrated circuits, particularly dynamic memory cells with storage capacitors
US4683641A (en) * 1983-08-01 1987-08-04 Gte Communication Systems Corp. Method of coding a MOS ROM array
US4598460A (en) * 1984-12-10 1986-07-08 Solid State Scientific, Inc. Method of making a CMOS EPROM with independently selectable thresholds
US4642877A (en) * 1985-07-01 1987-02-17 Texas Instruments Incorporated Method for making charge coupled device (CCD)-complementary metal oxide semiconductor (CMOS) devices
US4826779A (en) * 1986-10-24 1989-05-02 Teledyne Industries, Inc. Integrated capacitor and method of fabricating same

Also Published As

Publication number Publication date
IT8819989A0 (it) 1988-03-28
EP0335148A3 (en) 1990-01-24
US5091329A (en) 1992-02-25
JPH0210766A (ja) 1990-01-16
EP0335148A2 (en) 1989-10-04

Similar Documents

Publication Publication Date Title
EP0419663A4 (en) Nonvolatile semiconductor memory and method of producing the same
EP0341647A3 (en) Non-volatile memory cell and method of producing the same
EP0550751A4 (en) Nonvolatile semiconductor memory
DE69121483D1 (de) Dynamische Halbleiterspeicherzelle
KR860001484A (ko) 반도체 기억장치
DE69024173D1 (de) Nur-Lese-Speicheranordnung
KR860005370A (ko) 반도체 기억장치
SG8292G (en) Nonvolatile semiconductor memory
HK5095A (en) Floating gate memories
EP0453959A3 (en) Semiconductor memory cell
KR900015160A (ko) 반도체 기억장치
ITRM930155A0 (it) Metodo e circuiteria per l'uso di memorie aventi locazioni difettose erelativa apparecchiatura di produzione.
KR860005369A (ko) 반도체 기억장치
EP0280883A3 (en) Nonvolatile semiconductor memory
DE69120301D1 (de) Speicherprüfgerät
DE69020764D1 (de) Speicheradressierung.
IT1217372B (it) Procedimento per la programmazione di memorie rom in tecnologia mos ecmos
DE68927723D1 (de) Adressgenerator
EP0437218A3 (en) Semiconductor memory tester
DE69121775D1 (de) Auslöschbare programmierbare Speicheranordnung
DE69124010D1 (de) Halbleiterspeicherzelle
DE3855148D1 (de) Speicheradressengenerator
DE69119287D1 (de) Halbleiterspeicher
KR860004414A (ko) 판독전용 반도체 기억장치
EP0436323A3 (en) Semiconductor memories

Legal Events

Date Code Title Description
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19970329