IT1174767B - Procedimento per al produzione di piastrine di semiconduttori con lato dorsale di piastrina getterizzante - Google Patents
Procedimento per al produzione di piastrine di semiconduttori con lato dorsale di piastrina getterizzanteInfo
- Publication number
- IT1174767B IT1174767B IT48772/83A IT4877283A IT1174767B IT 1174767 B IT1174767 B IT 1174767B IT 48772/83 A IT48772/83 A IT 48772/83A IT 4877283 A IT4877283 A IT 4877283A IT 1174767 B IT1174767 B IT 1174767B
- Authority
- IT
- Italy
- Prior art keywords
- gorsterising
- procedure
- production
- plate back
- semiconductor plates
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/06—Gettering
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- High Energy & Nuclear Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Electromagnetism (AREA)
- Weting (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Bipolar Transistors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19823246480 DE3246480A1 (de) | 1982-12-15 | 1982-12-15 | Verfahren zur herstellung von halbleiterscheiben mit getternder scheibenrueckseite |
Publications (2)
Publication Number | Publication Date |
---|---|
IT8348772A0 IT8348772A0 (it) | 1983-07-28 |
IT1174767B true IT1174767B (it) | 1987-07-01 |
Family
ID=6180769
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT48772/83A IT1174767B (it) | 1982-12-15 | 1983-07-28 | Procedimento per al produzione di piastrine di semiconduttori con lato dorsale di piastrina getterizzante |
Country Status (4)
Country | Link |
---|---|
US (1) | US4539050A (it) |
JP (1) | JPS59115530A (it) |
DE (1) | DE3246480A1 (it) |
IT (1) | IT1174767B (it) |
Families Citing this family (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4659400A (en) * | 1985-06-27 | 1987-04-21 | General Instrument Corp. | Method for forming high yield epitaxial wafers |
EP0251280A3 (en) * | 1986-06-30 | 1989-11-23 | Nec Corporation | Method of gettering semiconductor wafers with a laser beam |
DE3934140A1 (de) * | 1989-10-12 | 1991-04-18 | Wacker Chemitronic | Verfahren zur die ausbildung von getterfaehigen zentren induzierenden oberflaechenbehandlung von halbleiterscheiben und dadurch erhaeltliche beidseitig polierte scheiben |
JPH0472735A (ja) * | 1990-07-13 | 1992-03-06 | Mitsubishi Materials Corp | 半導体ウエーハのゲッタリング方法 |
JPH06103714B2 (ja) * | 1990-11-22 | 1994-12-14 | 信越半導体株式会社 | シリコン単結晶の電気特性検査方法 |
FR2681472B1 (fr) | 1991-09-18 | 1993-10-29 | Commissariat Energie Atomique | Procede de fabrication de films minces de materiau semiconducteur. |
JP2910507B2 (ja) * | 1993-06-08 | 1999-06-23 | 信越半導体株式会社 | 半導体ウエーハの製造方法 |
US5426061A (en) * | 1994-09-06 | 1995-06-20 | Midwest Research Institute | Impurity gettering in semiconductors |
FR2748851B1 (fr) | 1996-05-15 | 1998-08-07 | Commissariat Energie Atomique | Procede de realisation d'une couche mince de materiau semiconducteur |
US6146979A (en) * | 1997-05-12 | 2000-11-14 | Silicon Genesis Corporation | Pressurized microbubble thin film separation process using a reusable substrate |
US20070122997A1 (en) | 1998-02-19 | 2007-05-31 | Silicon Genesis Corporation | Controlled process and resulting device |
US6291313B1 (en) | 1997-05-12 | 2001-09-18 | Silicon Genesis Corporation | Method and device for controlled cleaving process |
US6033974A (en) | 1997-05-12 | 2000-03-07 | Silicon Genesis Corporation | Method for controlled cleaving process |
US6548382B1 (en) | 1997-07-18 | 2003-04-15 | Silicon Genesis Corporation | Gettering technique for wafers made using a controlled cleaving process |
FR2773261B1 (fr) | 1997-12-30 | 2000-01-28 | Commissariat Energie Atomique | Procede pour le transfert d'un film mince comportant une etape de creation d'inclusions |
US6033489A (en) * | 1998-05-29 | 2000-03-07 | Fairchild Semiconductor Corp. | Semiconductor substrate and method of making same |
US6291326B1 (en) | 1998-06-23 | 2001-09-18 | Silicon Genesis Corporation | Pre-semiconductor process implant and post-process film separation |
US6221740B1 (en) | 1999-08-10 | 2001-04-24 | Silicon Genesis Corporation | Substrate cleaving tool and method |
EP1212787B1 (en) | 1999-08-10 | 2014-10-08 | Silicon Genesis Corporation | A cleaving process to fabricate multilayered substrates using low implantation doses |
US6263941B1 (en) | 1999-08-10 | 2001-07-24 | Silicon Genesis Corporation | Nozzle for cleaving substrates |
US6544862B1 (en) | 2000-01-14 | 2003-04-08 | Silicon Genesis Corporation | Particle distribution method and resulting structure for a layer transfer process |
FR2823599B1 (fr) | 2001-04-13 | 2004-12-17 | Commissariat Energie Atomique | Substrat demomtable a tenue mecanique controlee et procede de realisation |
US8187377B2 (en) | 2002-10-04 | 2012-05-29 | Silicon Genesis Corporation | Non-contact etch annealing of strained layers |
FR2848336B1 (fr) | 2002-12-09 | 2005-10-28 | Commissariat Energie Atomique | Procede de realisation d'une structure contrainte destinee a etre dissociee |
FR2856844B1 (fr) | 2003-06-24 | 2006-02-17 | Commissariat Energie Atomique | Circuit integre sur puce de hautes performances |
FR2857953B1 (fr) | 2003-07-21 | 2006-01-13 | Commissariat Energie Atomique | Structure empilee, et procede pour la fabriquer |
FR2861497B1 (fr) | 2003-10-28 | 2006-02-10 | Soitec Silicon On Insulator | Procede de transfert catastrophique d'une couche fine apres co-implantation |
FR2889887B1 (fr) | 2005-08-16 | 2007-11-09 | Commissariat Energie Atomique | Procede de report d'une couche mince sur un support |
US9362439B2 (en) | 2008-05-07 | 2016-06-07 | Silicon Genesis Corporation | Layer transfer of films utilizing controlled shear region |
US8993410B2 (en) | 2006-09-08 | 2015-03-31 | Silicon Genesis Corporation | Substrate cleaving under controlled stress conditions |
US7811900B2 (en) | 2006-09-08 | 2010-10-12 | Silicon Genesis Corporation | Method and structure for fabricating solar cells using a thick layer transfer process |
US8293619B2 (en) | 2008-08-28 | 2012-10-23 | Silicon Genesis Corporation | Layer transfer of films utilizing controlled propagation |
FR2910179B1 (fr) | 2006-12-19 | 2009-03-13 | Commissariat Energie Atomique | PROCEDE DE FABRICATION DE COUCHES MINCES DE GaN PAR IMPLANTATION ET RECYCLAGE D'UN SUBSTRAT DE DEPART |
FR2925221B1 (fr) | 2007-12-17 | 2010-02-19 | Commissariat Energie Atomique | Procede de transfert d'une couche mince |
US8330126B2 (en) | 2008-08-25 | 2012-12-11 | Silicon Genesis Corporation | Race track configuration and method for wafering silicon solar substrates |
US8329557B2 (en) | 2009-05-13 | 2012-12-11 | Silicon Genesis Corporation | Techniques for forming thin films by implantation with reduced channeling |
FR2947098A1 (fr) | 2009-06-18 | 2010-12-24 | Commissariat Energie Atomique | Procede de transfert d'une couche mince sur un substrat cible ayant un coefficient de dilatation thermique different de celui de la couche mince |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3905162A (en) * | 1974-07-23 | 1975-09-16 | Silicon Material Inc | Method of preparing high yield semiconductor wafer |
US4131487A (en) * | 1977-10-26 | 1978-12-26 | Western Electric Company, Inc. | Gettering semiconductor wafers with a high energy laser beam |
US4144099A (en) * | 1977-10-31 | 1979-03-13 | International Business Machines Corporation | High performance silicon wafer and fabrication process |
GB1602782A (en) * | 1978-01-24 | 1981-11-18 | Plessey Co Ltd | Surface acoustic wave filter arrangement |
JPS54110783A (en) * | 1978-02-20 | 1979-08-30 | Hitachi Ltd | Semiconductor substrate and its manufacture |
DE2829983A1 (de) * | 1978-07-07 | 1980-01-24 | Siemens Ag | Verfahren zum gettern von halbleiterbauelementen und integrierten halbleiterschaltkreisen |
JPS567439A (en) * | 1979-06-29 | 1981-01-26 | Sony Corp | Treating method for semiconductor substrate |
DE2927220A1 (de) * | 1979-07-05 | 1981-01-15 | Wacker Chemitronic | Verfahren zur stapelfehlerinduzierenden oberflaechenzerstoerung von halbleiterscheiben |
US4257827A (en) * | 1979-11-13 | 1981-03-24 | International Business Machines Corporation | High efficiency gettering in silicon through localized superheated melt formation |
JPS57100724A (en) * | 1980-12-15 | 1982-06-23 | Toshiba Corp | Manufacture of semiconductor device |
-
1982
- 1982-12-15 DE DE19823246480 patent/DE3246480A1/de active Granted
-
1983
- 1983-07-28 IT IT48772/83A patent/IT1174767B/it active
- 1983-10-19 US US06/543,411 patent/US4539050A/en not_active Expired - Fee Related
- 1983-12-07 JP JP58229994A patent/JPS59115530A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
DE3246480A1 (de) | 1984-06-20 |
JPS59115530A (ja) | 1984-07-04 |
US4539050A (en) | 1985-09-03 |
IT8348772A0 (it) | 1983-07-28 |
DE3246480C2 (it) | 1989-05-24 |
JPH0334852B2 (it) | 1991-05-24 |
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