IT1150836B - Dispositivo semiconduttore ad effetto di campo - Google Patents
Dispositivo semiconduttore ad effetto di campoInfo
- Publication number
- IT1150836B IT1150836B IT20692/82A IT2069282A IT1150836B IT 1150836 B IT1150836 B IT 1150836B IT 20692/82 A IT20692/82 A IT 20692/82A IT 2069282 A IT2069282 A IT 2069282A IT 1150836 B IT1150836 B IT 1150836B
- Authority
- IT
- Italy
- Prior art keywords
- field
- semiconductive device
- effect
- effect semiconductive
- semiconductive
- Prior art date
Links
- 230000005669 field effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/7722—Field effect transistors using static field induced regions, e.g. SIT, PBT
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
- Weting (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US25508381A | 1981-04-17 | 1981-04-17 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IT8220692A0 IT8220692A0 (it) | 1982-04-13 |
| IT1150836B true IT1150836B (it) | 1986-12-17 |
Family
ID=22966761
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT20692/82A IT1150836B (it) | 1981-04-17 | 1982-04-13 | Dispositivo semiconduttore ad effetto di campo |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS57181171A (ja) |
| DE (1) | DE3213772A1 (ja) |
| GB (1) | GB2097188A (ja) |
| IT (1) | IT1150836B (ja) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0264564B1 (de) * | 1986-09-30 | 1992-11-11 | Siemens Aktiengesellschaft | Silizium-Temperatursensor |
| JPS6453476A (en) * | 1987-08-24 | 1989-03-01 | Nippon Telegraph & Telephone | Superconducting three-terminal element and manufacture thereof |
| EP0435541A3 (en) * | 1989-12-26 | 1991-07-31 | Motorola Inc. | Semiconductor device having internal current limit overvoltage protection |
| US5309007A (en) * | 1991-09-30 | 1994-05-03 | The United States Of America As Represented By The Secretary Of The Navy | Junction field effect transistor with lateral gate voltage swing (GVS-JFET) |
| US7026669B2 (en) * | 2004-06-03 | 2006-04-11 | Ranbir Singh | Lateral channel transistor |
-
1982
- 1982-04-13 IT IT20692/82A patent/IT1150836B/it active
- 1982-04-14 DE DE19823213772 patent/DE3213772A1/de not_active Withdrawn
- 1982-04-15 GB GB8211030A patent/GB2097188A/en not_active Withdrawn
- 1982-04-16 JP JP57062643A patent/JPS57181171A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| GB2097188A (en) | 1982-10-27 |
| JPS57181171A (en) | 1982-11-08 |
| IT8220692A0 (it) | 1982-04-13 |
| DE3213772A1 (de) | 1982-11-25 |
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