IT1150096B - Metodo per fabbricare un transistor con un profilo ideale delle impurita della base - Google Patents
Metodo per fabbricare un transistor con un profilo ideale delle impurita della baseInfo
- Publication number
- IT1150096B IT1150096B IT26721/80A IT2672180A IT1150096B IT 1150096 B IT1150096 B IT 1150096B IT 26721/80 A IT26721/80 A IT 26721/80A IT 2672180 A IT2672180 A IT 2672180A IT 1150096 B IT1150096 B IT 1150096B
- Authority
- IT
- Italy
- Prior art keywords
- transistor
- manufacturing
- ideal profile
- base impurities
- impurities
- Prior art date
Links
- 239000012535 impurity Substances 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1004—Base region of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/US1979/001137 WO1981001911A1 (en) | 1979-12-28 | 1979-12-28 | Method for achieving ideal impurity base profile in a transistor |
Publications (2)
Publication Number | Publication Date |
---|---|
IT8026721A0 IT8026721A0 (it) | 1980-12-18 |
IT1150096B true IT1150096B (it) | 1986-12-10 |
Family
ID=22147840
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT26721/80A IT1150096B (it) | 1979-12-28 | 1980-12-18 | Metodo per fabbricare un transistor con un profilo ideale delle impurita della base |
Country Status (6)
Country | Link |
---|---|
EP (1) | EP0042380B1 (it) |
JP (1) | JPS6410951B2 (it) |
CA (1) | CA1160363A (it) |
DE (1) | DE2967588D1 (it) |
IT (1) | IT1150096B (it) |
WO (1) | WO1981001911A1 (it) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4536950A (en) * | 1983-02-10 | 1985-08-27 | Matsushita Electric Industrial Co., Ltd. | Method for making semiconductor device |
US4912053A (en) * | 1988-02-01 | 1990-03-27 | Harris Corporation | Ion implanted JFET with self-aligned source and drain |
JPH02153534A (ja) * | 1988-12-06 | 1990-06-13 | Toshiba Corp | 半導体装置の製造方法 |
US5204276A (en) * | 1988-12-06 | 1993-04-20 | Kabushiki Kaisha Toshiba | Method of manufacturing semiconductor device |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3083441A (en) * | 1959-04-13 | 1963-04-02 | Texas Instruments Inc | Method for fabricating transistors |
US3389023A (en) * | 1966-01-14 | 1968-06-18 | Ibm | Methods of making a narrow emitter transistor by masking and diffusion |
US3432920A (en) * | 1966-12-01 | 1969-03-18 | Rca Corp | Semiconductor devices and methods of making them |
US3489622A (en) * | 1967-05-18 | 1970-01-13 | Ibm | Method of making high frequency transistors |
FR1569872A (it) * | 1968-04-10 | 1969-06-06 | ||
US3717507A (en) * | 1969-06-19 | 1973-02-20 | Shibaura Electric Co Ltd | Method of manufacturing semiconductor devices utilizing ion-implantation and arsenic diffusion |
US3886569A (en) * | 1970-01-22 | 1975-05-27 | Ibm | Simultaneous double diffusion into a semiconductor substrate |
NL7116688A (it) * | 1970-12-09 | 1972-06-13 | ||
US3753807A (en) * | 1972-02-24 | 1973-08-21 | Bell Canada Northern Electric | Manufacture of bipolar semiconductor devices |
US3856578A (en) * | 1972-03-13 | 1974-12-24 | Bell Telephone Labor Inc | Bipolar transistors and method of manufacture |
US3940288A (en) * | 1973-05-16 | 1976-02-24 | Fujitsu Limited | Method of making a semiconductor device |
US3880676A (en) * | 1973-10-29 | 1975-04-29 | Rca Corp | Method of making a semiconductor device |
US4066473A (en) * | 1976-07-15 | 1978-01-03 | Fairchild Camera And Instrument Corporation | Method of fabricating high-gain transistors |
US4115797A (en) * | 1976-10-04 | 1978-09-19 | Fairchild Camera And Instrument Corporation | Integrated injection logic with heavily doped injector base self-aligned with injector emitter and collector |
US4157269A (en) * | 1978-06-06 | 1979-06-05 | International Business Machines Corporation | Utilizing polysilicon diffusion sources and special masking techniques |
US4168999A (en) * | 1978-12-26 | 1979-09-25 | Fairchild Camera And Instrument Corporation | Method for forming oxide isolated integrated injection logic semiconductor structures having minimal encroachment utilizing special masking techniques |
-
1979
- 1979-12-28 JP JP55501220A patent/JPS6410951B2/ja not_active Expired
- 1979-12-28 WO PCT/US1979/001137 patent/WO1981001911A1/en active IP Right Grant
- 1979-12-28 DE DE8080901014T patent/DE2967588D1/de not_active Expired
- 1979-12-28 EP EP80901014A patent/EP0042380B1/en not_active Expired
-
1980
- 1980-12-17 CA CA000367000A patent/CA1160363A/en not_active Expired
- 1980-12-18 IT IT26721/80A patent/IT1150096B/it active
Also Published As
Publication number | Publication date |
---|---|
EP0042380A4 (en) | 1983-04-18 |
JPS6410951B2 (it) | 1989-02-22 |
DE2967588D1 (en) | 1986-04-24 |
EP0042380A1 (en) | 1981-12-30 |
WO1981001911A1 (en) | 1981-07-09 |
EP0042380B1 (en) | 1986-03-19 |
CA1160363A (en) | 1984-01-10 |
JPS56501585A (it) | 1981-10-29 |
IT8026721A0 (it) | 1980-12-18 |
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