IT1115304B - Procedimento per la correzione del coefficiente di tensione di resistenze semiconduttrici realizazte mediante impiantamento o mediante diffusione - Google Patents
Procedimento per la correzione del coefficiente di tensione di resistenze semiconduttrici realizazte mediante impiantamento o mediante diffusioneInfo
- Publication number
- IT1115304B IT1115304B IT2341877A IT2341877A IT1115304B IT 1115304 B IT1115304 B IT 1115304B IT 2341877 A IT2341877 A IT 2341877A IT 2341877 A IT2341877 A IT 2341877A IT 1115304 B IT1115304 B IT 1115304B
- Authority
- IT
- Italy
- Prior art keywords
- semiconductive
- implantation
- diffusion
- correction
- procedure
- Prior art date
Links
- 238000009792 diffusion process Methods 0.000 title 1
- 238000002513 implantation Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/8605—Resistors with PN junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/326—Application of electric currents or fields, e.g. for electroforming
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0802—Resistors only
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Analogue/Digital Conversion (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7615001A FR2351505A1 (fr) | 1976-05-13 | 1976-05-13 | Procede de correction du coefficient en tension de resistances semi-conductrices, implantees ou diffusees |
Publications (1)
Publication Number | Publication Date |
---|---|
IT1115304B true IT1115304B (it) | 1986-02-03 |
Family
ID=9173307
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT2341877A IT1115304B (it) | 1976-05-13 | 1977-05-11 | Procedimento per la correzione del coefficiente di tensione di resistenze semiconduttrici realizazte mediante impiantamento o mediante diffusione |
Country Status (5)
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4229753A (en) * | 1977-08-18 | 1980-10-21 | International Business Machines Corporation | Voltage compensation of temperature coefficient of resistance in an integrated circuit resistor |
SE7900379L (sv) * | 1978-01-25 | 1979-07-26 | Western Electric Co | Halvledare-integrerad-krets |
JPS5516489A (en) * | 1978-07-24 | 1980-02-05 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor resistance device |
DE3009042A1 (de) * | 1979-03-19 | 1980-10-02 | Trw Inc | Halbleiterwiderstand |
JPS55140260A (en) * | 1979-04-16 | 1980-11-01 | Fujitsu Ltd | Semiconductor device |
NL8203323A (nl) * | 1982-08-25 | 1984-03-16 | Philips Nv | Geintegreerde weerstand. |
EP0109996B1 (fr) * | 1982-11-26 | 1987-06-03 | International Business Machines Corporation | Structure de résistance autopolarisée et application à la réalisation de circuits d'interface |
EP0139027B1 (de) * | 1983-10-19 | 1988-03-16 | Deutsche ITT Industries GmbH | Monolithisch integrierte Schaltung mit mindestens einem integrierten Widerstand |
JPS63244765A (ja) * | 1987-03-31 | 1988-10-12 | Toshiba Corp | 拡散抵抗を有する集積回路 |
JPH0423355A (ja) * | 1990-05-15 | 1992-01-27 | Hitachi Ltd | 半導体装置 |
DE4329639A1 (de) * | 1993-09-02 | 1995-03-09 | Telefunken Microelectron | Schaltungsanordnung mit gesteuerten Pinch-Widerständen |
DE10135169B4 (de) * | 2001-07-19 | 2004-02-19 | Robert Bosch Gmbh | Widerstandsanordnung und Strommesser |
US8384157B2 (en) | 2006-05-10 | 2013-02-26 | International Rectifier Corporation | High ohmic integrated resistor with improved linearity |
JP2012109535A (ja) | 2010-10-20 | 2012-06-07 | Asahi Kasei Electronics Co Ltd | 抵抗素子及び反転バッファ回路 |
JP6269936B2 (ja) * | 2013-12-26 | 2018-01-31 | 横河電機株式会社 | 集積回路 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3270258A (en) * | 1963-07-05 | 1966-08-30 | Int Rectifier Corp | Field effect transistor |
JPS515759A (ja) * | 1974-07-03 | 1976-01-17 | Hitachi Ltd | Sokoki |
JPS515277A (US06811534-20041102-M00003.png) * | 1974-07-04 | 1976-01-16 | Tatsuo Okazaki | |
DE2435606C3 (de) * | 1974-07-24 | 1979-03-01 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Reihenschaltung aus Feldeffekttransistoren zur Realisierung eines hxxochohmigen linearen Widerstandes |
-
1976
- 1976-05-13 FR FR7615001A patent/FR2351505A1/fr active Granted
-
1977
- 1977-04-25 GB GB1702477A patent/GB1517266A/en not_active Expired
- 1977-05-07 DE DE19772720653 patent/DE2720653A1/de active Granted
- 1977-05-10 JP JP5274977A patent/JPS52137988A/ja active Granted
- 1977-05-11 IT IT2341877A patent/IT1115304B/it active
Also Published As
Publication number | Publication date |
---|---|
FR2351505A1 (fr) | 1977-12-09 |
GB1517266A (en) | 1978-07-12 |
DE2720653C2 (US06811534-20041102-M00003.png) | 1989-03-16 |
FR2351505B1 (US06811534-20041102-M00003.png) | 1979-10-12 |
JPS52137988A (en) | 1977-11-17 |
DE2720653A1 (de) | 1977-12-01 |
JPS575059B2 (US06811534-20041102-M00003.png) | 1982-01-28 |
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