IT1115304B - Procedimento per la correzione del coefficiente di tensione di resistenze semiconduttrici realizazte mediante impiantamento o mediante diffusione - Google Patents

Procedimento per la correzione del coefficiente di tensione di resistenze semiconduttrici realizazte mediante impiantamento o mediante diffusione

Info

Publication number
IT1115304B
IT1115304B IT2341877A IT2341877A IT1115304B IT 1115304 B IT1115304 B IT 1115304B IT 2341877 A IT2341877 A IT 2341877A IT 2341877 A IT2341877 A IT 2341877A IT 1115304 B IT1115304 B IT 1115304B
Authority
IT
Italy
Prior art keywords
semiconductive
implantation
diffusion
correction
procedure
Prior art date
Application number
IT2341877A
Other languages
English (en)
Italian (it)
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of IT1115304B publication Critical patent/IT1115304B/it

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/8605Resistors with PN junctions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/326Application of electric currents or fields, e.g. for electroforming
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0802Resistors only

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Analogue/Digital Conversion (AREA)
IT2341877A 1976-05-13 1977-05-11 Procedimento per la correzione del coefficiente di tensione di resistenze semiconduttrici realizazte mediante impiantamento o mediante diffusione IT1115304B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7615001A FR2351505A1 (fr) 1976-05-13 1976-05-13 Procede de correction du coefficient en tension de resistances semi-conductrices, implantees ou diffusees

Publications (1)

Publication Number Publication Date
IT1115304B true IT1115304B (it) 1986-02-03

Family

ID=9173307

Family Applications (1)

Application Number Title Priority Date Filing Date
IT2341877A IT1115304B (it) 1976-05-13 1977-05-11 Procedimento per la correzione del coefficiente di tensione di resistenze semiconduttrici realizazte mediante impiantamento o mediante diffusione

Country Status (5)

Country Link
JP (1) JPS52137988A (US06811534-20041102-M00003.png)
DE (1) DE2720653A1 (US06811534-20041102-M00003.png)
FR (1) FR2351505A1 (US06811534-20041102-M00003.png)
GB (1) GB1517266A (US06811534-20041102-M00003.png)
IT (1) IT1115304B (US06811534-20041102-M00003.png)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4229753A (en) * 1977-08-18 1980-10-21 International Business Machines Corporation Voltage compensation of temperature coefficient of resistance in an integrated circuit resistor
SE7900379L (sv) * 1978-01-25 1979-07-26 Western Electric Co Halvledare-integrerad-krets
JPS5516489A (en) * 1978-07-24 1980-02-05 Nippon Telegr & Teleph Corp <Ntt> Semiconductor resistance device
DE3009042A1 (de) * 1979-03-19 1980-10-02 Trw Inc Halbleiterwiderstand
JPS55140260A (en) * 1979-04-16 1980-11-01 Fujitsu Ltd Semiconductor device
NL8203323A (nl) * 1982-08-25 1984-03-16 Philips Nv Geintegreerde weerstand.
EP0109996B1 (fr) * 1982-11-26 1987-06-03 International Business Machines Corporation Structure de résistance autopolarisée et application à la réalisation de circuits d'interface
EP0139027B1 (de) * 1983-10-19 1988-03-16 Deutsche ITT Industries GmbH Monolithisch integrierte Schaltung mit mindestens einem integrierten Widerstand
JPS63244765A (ja) * 1987-03-31 1988-10-12 Toshiba Corp 拡散抵抗を有する集積回路
JPH0423355A (ja) * 1990-05-15 1992-01-27 Hitachi Ltd 半導体装置
DE4329639A1 (de) * 1993-09-02 1995-03-09 Telefunken Microelectron Schaltungsanordnung mit gesteuerten Pinch-Widerständen
DE10135169B4 (de) * 2001-07-19 2004-02-19 Robert Bosch Gmbh Widerstandsanordnung und Strommesser
US8384157B2 (en) 2006-05-10 2013-02-26 International Rectifier Corporation High ohmic integrated resistor with improved linearity
JP2012109535A (ja) 2010-10-20 2012-06-07 Asahi Kasei Electronics Co Ltd 抵抗素子及び反転バッファ回路
JP6269936B2 (ja) * 2013-12-26 2018-01-31 横河電機株式会社 集積回路

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3270258A (en) * 1963-07-05 1966-08-30 Int Rectifier Corp Field effect transistor
JPS515759A (ja) * 1974-07-03 1976-01-17 Hitachi Ltd Sokoki
JPS515277A (US06811534-20041102-M00003.png) * 1974-07-04 1976-01-16 Tatsuo Okazaki
DE2435606C3 (de) * 1974-07-24 1979-03-01 Siemens Ag, 1000 Berlin Und 8000 Muenchen Reihenschaltung aus Feldeffekttransistoren zur Realisierung eines hxxochohmigen linearen Widerstandes

Also Published As

Publication number Publication date
FR2351505A1 (fr) 1977-12-09
GB1517266A (en) 1978-07-12
DE2720653C2 (US06811534-20041102-M00003.png) 1989-03-16
FR2351505B1 (US06811534-20041102-M00003.png) 1979-10-12
JPS52137988A (en) 1977-11-17
DE2720653A1 (de) 1977-12-01
JPS575059B2 (US06811534-20041102-M00003.png) 1982-01-28

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