IT1101412B - Metodo per la preparazione di pellicole sottili - Google Patents
Metodo per la preparazione di pellicole sottiliInfo
- Publication number
- IT1101412B IT1101412B IT29765/78A IT2976578A IT1101412B IT 1101412 B IT1101412 B IT 1101412B IT 29765/78 A IT29765/78 A IT 29765/78A IT 2976578 A IT2976578 A IT 2976578A IT 1101412 B IT1101412 B IT 1101412B
- Authority
- IT
- Italy
- Prior art keywords
- preparation
- thin films
- films
- thin
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02491—Conductive materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/02557—Sulfides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/0256—Selenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
- H01L21/42—Bombardment with radiation
- H01L21/423—Bombardment with radiation with high-energy radiation
- H01L21/428—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/477—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
- H10F10/169—Photovoltaic cells having only PN heterojunction potential barriers comprising Cu2X/CdX heterojunctions, wherein X is a Group VI element, e.g. Cu2O/CdO PN heterojunction photovoltaic cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2004—Light-sensitive devices characterised by the electrolyte, e.g. comprising an organic electrolyte
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Photovoltaic Devices (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Chemically Coating (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB4744377 | 1977-11-15 |
Publications (2)
Publication Number | Publication Date |
---|---|
IT7829765A0 IT7829765A0 (it) | 1978-11-14 |
IT1101412B true IT1101412B (it) | 1985-09-28 |
Family
ID=10444991
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT29765/78A IT1101412B (it) | 1977-11-15 | 1978-11-14 | Metodo per la preparazione di pellicole sottili |
Country Status (6)
Country | Link |
---|---|
US (1) | US4204933A (it) |
EP (1) | EP0002109B1 (it) |
JP (1) | JPS5485670A (it) |
AU (1) | AU526454B2 (it) |
DE (1) | DE2861418D1 (it) |
IT (1) | IT1101412B (it) |
Families Citing this family (46)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55500237A (it) * | 1978-04-27 | 1980-04-24 | ||
GB2033355B (en) * | 1978-09-07 | 1982-05-06 | Standard Telephones Cables Ltd | Semiconductor processing |
IL57908A0 (en) * | 1979-07-07 | 1979-11-30 | Yeda Res & Dev | Photovoltaic materials |
US4345967A (en) * | 1980-03-04 | 1982-08-24 | Cook Melvin S | Method of producing thin single-crystal sheets |
US4261802A (en) * | 1980-02-21 | 1981-04-14 | Ametek, Inc. | Method of making a photovoltaic cell |
US4354198A (en) * | 1980-05-30 | 1982-10-12 | International Business Machines Corporation | Zinc-sulphide capping layer for gallium-arsenide device |
US4419278A (en) * | 1981-05-04 | 1983-12-06 | Diamond Shamrock Corporation | Photoactive semiconductor material using true solid/solid solution mixed metal oxide |
US4396485A (en) * | 1981-05-04 | 1983-08-02 | Diamond Shamrock Corporation | Film photoelectrodes |
US4500397A (en) * | 1981-07-27 | 1985-02-19 | Sony Corporation | Method for the preparation of a pyroelectric material |
US4493886A (en) * | 1982-05-11 | 1985-01-15 | University Patents, Inc. | Composition and method for forming amorphous chalcogenide films from solution |
US4439464A (en) * | 1982-05-11 | 1984-03-27 | University Patents, Inc. | Composition and method for forming amorphous chalcogenide films from solution |
JPH0699808B2 (ja) * | 1985-12-19 | 1994-12-07 | 松下電器産業株式会社 | 硫化カドミウム薄膜の形成方法 |
US4801476A (en) * | 1986-09-24 | 1989-01-31 | Exxon Research And Engineering Company | Method for production of large area 2-dimensional arrays of close packed colloidal particles |
US5270229A (en) * | 1989-03-07 | 1993-12-14 | Matsushita Electric Industrial Co., Ltd. | Thin film semiconductor device and process for producing thereof |
US5128064A (en) * | 1989-04-18 | 1992-07-07 | Wisconsin Alumni Research Foundation | Cadmium sulfide membranes |
US5059346A (en) * | 1989-04-18 | 1991-10-22 | Wisconsin Alumni Research Foundation | Cadmium sulfide membranes |
FR2682401B1 (fr) * | 1991-10-09 | 1993-11-26 | Sochata | Procede de depot electrophoretique de poudre metallique pour rechargement de pieces par brasage-diffusion et bain utilise. |
JP2967908B2 (ja) * | 1994-09-21 | 1999-10-25 | 矢崎総業株式会社 | 分散めっき法と太陽電池の製造方法 |
JP2003265962A (ja) * | 2002-03-18 | 2003-09-24 | Nittetsu Mining Co Ltd | 光触媒およびその製造方法 |
JP4357801B2 (ja) * | 2002-06-25 | 2009-11-04 | 日鉄鉱業株式会社 | 高活性光触媒およびその製造方法 |
DE10228937A1 (de) * | 2002-06-28 | 2004-01-15 | Philips Intellectual Property & Standards Gmbh | Elektrolumineszierende Vorrichtung mit verbesserter Lichtauskopplung |
US7247222B2 (en) * | 2002-07-24 | 2007-07-24 | Applied Materials, Inc. | Electrochemical processing cell |
US7128823B2 (en) | 2002-07-24 | 2006-10-31 | Applied Materials, Inc. | Anolyte for copper plating |
US7422709B2 (en) * | 2004-05-21 | 2008-09-09 | Crosby Gernon | Electromagnetic rheological (EMR) fluid and method for using the EMR fluid |
WO2006122774A1 (en) * | 2005-05-17 | 2006-11-23 | Interuniversitair Microelektronica Centrum Vzw | Method for the production of photovoltaic cells |
KR100651919B1 (ko) * | 2005-09-29 | 2006-12-01 | 엘지전자 주식회사 | 녹화 속도 조절 기능을 갖는 이동통신단말기 및 이를이용한 방법 |
US8071179B2 (en) | 2007-06-29 | 2011-12-06 | Stion Corporation | Methods for infusing one or more materials into nano-voids if nanoporous or nanostructured materials |
WO2009111054A1 (en) * | 2008-03-05 | 2009-09-11 | Global Solar Energy, Inc. | Solution containment during buffer layer deposition |
US9252318B2 (en) | 2008-03-05 | 2016-02-02 | Hanergy Hi-Tech Power (Hk) Limited | Solution containment during buffer layer deposition |
JP5738601B2 (ja) | 2008-03-05 | 2015-06-24 | ハナジー・ハイ−テク・パワー・(エイチケー)・リミテッド | 薄膜太陽電池セルのための緩衝層蒸着 |
US20100087015A1 (en) * | 2008-03-05 | 2010-04-08 | Global Solar Energy, Inc. | Feedback for buffer layer deposition |
DE112009000532T5 (de) * | 2008-03-05 | 2011-03-10 | Global Solar Energy, Inc., Tuscon | Heizgerät für Pufferschichtaufbringung |
US7947524B2 (en) | 2008-09-30 | 2011-05-24 | Stion Corporation | Humidity control and method for thin film photovoltaic materials |
US8383450B2 (en) * | 2008-09-30 | 2013-02-26 | Stion Corporation | Large scale chemical bath system and method for cadmium sulfide processing of thin film photovoltaic materials |
US20110018103A1 (en) * | 2008-10-02 | 2011-01-27 | Stion Corporation | System and method for transferring substrates in large scale processing of cigs and/or cis devices |
US8241943B1 (en) | 2009-05-08 | 2012-08-14 | Stion Corporation | Sodium doping method and system for shaped CIGS/CIS based thin film solar cells |
US8372684B1 (en) | 2009-05-14 | 2013-02-12 | Stion Corporation | Method and system for selenization in fabricating CIGS/CIS solar cells |
US8507786B1 (en) | 2009-06-27 | 2013-08-13 | Stion Corporation | Manufacturing method for patterning CIGS/CIS solar cells |
US8398772B1 (en) | 2009-08-18 | 2013-03-19 | Stion Corporation | Method and structure for processing thin film PV cells with improved temperature uniformity |
US8859880B2 (en) * | 2010-01-22 | 2014-10-14 | Stion Corporation | Method and structure for tiling industrial thin-film solar devices |
US9096930B2 (en) | 2010-03-29 | 2015-08-04 | Stion Corporation | Apparatus for manufacturing thin film photovoltaic devices |
US8142521B2 (en) * | 2010-03-29 | 2012-03-27 | Stion Corporation | Large scale MOCVD system for thin film photovoltaic devices |
US9136406B2 (en) * | 2010-07-07 | 2015-09-15 | Toyota Motor Engineering & Manufacturing North America, Inc. | Solar cell assembly with diffraction gratings |
US8461061B2 (en) | 2010-07-23 | 2013-06-11 | Stion Corporation | Quartz boat method and apparatus for thin film thermal treatment |
US8409906B2 (en) | 2010-10-25 | 2013-04-02 | Imra America, Inc. | Non-vacuum method for fabrication of a photovoltaic absorber layer |
US8748216B2 (en) | 2010-10-25 | 2014-06-10 | Imra America, Inc. | Non-vacuum method for fabrication of a photovoltaic absorber layer |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2851408A (en) * | 1954-10-01 | 1958-09-09 | Westinghouse Electric Corp | Method of electrophoretic deposition of luminescent materials and product resulting therefrom |
BE621339A (it) * | 1961-08-30 | 1900-01-01 | ||
DE1171995B (de) * | 1962-02-08 | 1964-06-11 | Ibm Deutschland | Verfahren zum Aufbringen von Fotoelementen auf nichtleitende Traeger |
US3480535A (en) * | 1966-07-07 | 1969-11-25 | Trw Inc | Sputter depositing semiconductor material and forming semiconductor junctions through a molten layer |
US3585088A (en) * | 1968-10-18 | 1971-06-15 | Ibm | Methods of producing single crystals on supporting substrates |
DE1928817C2 (de) * | 1969-06-06 | 1982-07-01 | Naamloze Vennootschap Philips' Gloeilampenfabrieken, 5621 Eindhoven | Verwendung einer Dispersion feinteiliger Stoffe in einem apolaren Dispersionsmittel |
US3761308A (en) * | 1971-11-22 | 1973-09-25 | Ibm | Preparation of photoconductive films |
US3879276A (en) * | 1974-04-10 | 1975-04-22 | Int Standard Electric Corp | Electrophoretic deposition of selenium |
US4034127A (en) * | 1975-03-31 | 1977-07-05 | Rca Corporation | Method of forming and treating cadmium selenide photoconductive bodies |
US4098617A (en) * | 1975-09-23 | 1978-07-04 | Lidorenko Nikolai S | Method of manufacturing film thermopile |
US4011149A (en) * | 1975-11-17 | 1977-03-08 | Allied Chemical Corporation | Photoelectrolysis of water by solar radiation |
US4059461A (en) * | 1975-12-10 | 1977-11-22 | Massachusetts Institute Of Technology | Method for improving the crystallinity of semiconductor films by laser beam scanning and the products thereof |
GB1573320A (en) * | 1976-05-17 | 1980-08-20 | Ici Ltd | Electrophopretic deposition of inorganic films |
US4087293A (en) * | 1977-01-06 | 1978-05-02 | Honeywell Inc. | Silicon as donor dopant in Hg1-x Cdx Te |
US4101341A (en) * | 1977-05-04 | 1978-07-18 | Battelle Development Corporation | CdSe-SnSe photovoltaic cell |
-
1978
- 1978-10-23 EP EP78300527A patent/EP0002109B1/en not_active Expired
- 1978-10-23 DE DE7878300527T patent/DE2861418D1/de not_active Expired
- 1978-10-27 US US05/955,244 patent/US4204933A/en not_active Expired - Lifetime
- 1978-11-01 AU AU41226/78A patent/AU526454B2/en not_active Expired
- 1978-11-14 JP JP14040378A patent/JPS5485670A/ja active Pending
- 1978-11-14 IT IT29765/78A patent/IT1101412B/it active
Also Published As
Publication number | Publication date |
---|---|
AU526454B2 (en) | 1983-01-13 |
JPS5485670A (en) | 1979-07-07 |
IT7829765A0 (it) | 1978-11-14 |
AU4122678A (en) | 1979-05-24 |
US4204933A (en) | 1980-05-27 |
EP0002109A1 (en) | 1979-05-30 |
DE2861418D1 (en) | 1982-01-28 |
EP0002109B1 (en) | 1981-12-02 |
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