IT1096633B - Resistore diffuso in un corpo semiconduttore - Google Patents

Resistore diffuso in un corpo semiconduttore

Info

Publication number
IT1096633B
IT1096633B IT24492/78A IT2449278A IT1096633B IT 1096633 B IT1096633 B IT 1096633B IT 24492/78 A IT24492/78 A IT 24492/78A IT 2449278 A IT2449278 A IT 2449278A IT 1096633 B IT1096633 B IT 1096633B
Authority
IT
Italy
Prior art keywords
diffused resistor
semiconductive body
semiconductive
diffused
resistor
Prior art date
Application number
IT24492/78A
Other languages
English (en)
Other versions
IT7824492A0 (it
Inventor
Franco Bertotti
Fausto Catellani
Giuseppe Gavioli
Original Assignee
Ates Componenti Elettron
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ates Componenti Elettron filed Critical Ates Componenti Elettron
Priority to IT24492/78A priority Critical patent/IT1096633B/it
Publication of IT7824492A0 publication Critical patent/IT7824492A0/it
Priority to US06/046,602 priority patent/US4245209A/en
Priority to DE2923799A priority patent/DE2923799C2/de
Priority to FR7914957A priority patent/FR2428917A1/fr
Priority to GB7920554A priority patent/GB2025128B/en
Application granted granted Critical
Publication of IT1096633B publication Critical patent/IT1096633B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/43—Resistors having PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/206—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of combinations of capacitors and resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/209—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only resistors
IT24492/78A 1978-06-13 1978-06-13 Resistore diffuso in un corpo semiconduttore IT1096633B (it)

Priority Applications (5)

Application Number Priority Date Filing Date Title
IT24492/78A IT1096633B (it) 1978-06-13 1978-06-13 Resistore diffuso in un corpo semiconduttore
US06/046,602 US4245209A (en) 1978-06-13 1979-06-08 Voltage divider including a tapped resistor diffused in semiconductor substrate
DE2923799A DE2923799C2 (de) 1978-06-13 1979-06-12 Diffundierter Halbleiterwiderstand
FR7914957A FR2428917A1 (fr) 1978-06-13 1979-06-12 Resistance diffuse dans un semi-conducteur
GB7920554A GB2025128B (en) 1978-06-13 1979-06-13 Diffused resistor in a semiconductor body

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT24492/78A IT1096633B (it) 1978-06-13 1978-06-13 Resistore diffuso in un corpo semiconduttore

Publications (2)

Publication Number Publication Date
IT7824492A0 IT7824492A0 (it) 1978-06-13
IT1096633B true IT1096633B (it) 1985-08-26

Family

ID=11213740

Family Applications (1)

Application Number Title Priority Date Filing Date
IT24492/78A IT1096633B (it) 1978-06-13 1978-06-13 Resistore diffuso in un corpo semiconduttore

Country Status (5)

Country Link
US (1) US4245209A (it)
DE (1) DE2923799C2 (it)
FR (1) FR2428917A1 (it)
GB (1) GB2025128B (it)
IT (1) IT1096633B (it)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57100755A (en) * 1980-12-15 1982-06-23 Fujitsu Ltd Semiconductor device
US4578772A (en) * 1981-09-18 1986-03-25 Fujitsu Limited Voltage dividing circuit
IT1213214B (it) * 1984-09-05 1989-12-14 Ates Componenti Elettron Partitore di tensione resistivo per circuiti integrati.
US5268651A (en) * 1991-09-23 1993-12-07 Crystal Semiconductor Corporation Low drift resistor structure
US5339067A (en) * 1993-05-07 1994-08-16 Crystal Semiconductor Corporation Integrated voltage divider and circuit employing an integrated voltage divider
US5610079A (en) * 1995-06-19 1997-03-11 Reliance Electric Industrial Company Self-biased moat for parasitic current suppression in integrated circuits
JP3171240B2 (ja) * 1998-01-13 2001-05-28 日本電気株式会社 抵抗素子、それを用いた半導体装置およびこれらの製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE760029C (de) * 1940-04-27 1954-06-21 Siemens Schuckertwerke A G Widerstandskoerper fuer Schalt- oder Regelzwecke
GB1001908A (en) * 1962-08-31 1965-08-18 Texas Instruments Inc Semiconductor devices
GB1236580A (en) * 1967-12-20 1971-06-23 Sangamo Weston Improvements in or relating to electrical resistors
NL6907227A (it) * 1969-05-10 1970-11-12
IT1115654B (it) * 1977-05-04 1986-02-03 Ates Componenti Elettron Partitore di tensione diffuso per circuito integrato monolitico

Also Published As

Publication number Publication date
DE2923799C2 (de) 1986-09-25
IT7824492A0 (it) 1978-06-13
DE2923799A1 (de) 1979-12-20
GB2025128B (en) 1982-10-20
FR2428917B1 (it) 1982-08-13
FR2428917A1 (fr) 1980-01-11
GB2025128A (en) 1980-01-16
US4245209A (en) 1981-01-13

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Legal Events

Date Code Title Description
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19970628