IT7824492A0 - Resistore diffuso in un corpo semiconduttore. - Google Patents

Resistore diffuso in un corpo semiconduttore.

Info

Publication number
IT7824492A0
IT7824492A0 IT7824492A IT2449278A IT7824492A0 IT 7824492 A0 IT7824492 A0 IT 7824492A0 IT 7824492 A IT7824492 A IT 7824492A IT 2449278 A IT2449278 A IT 2449278A IT 7824492 A0 IT7824492 A0 IT 7824492A0
Authority
IT
Italy
Prior art keywords
semiconductor body
diffused resistor
diffused
resistor
semiconductor
Prior art date
Application number
IT7824492A
Other languages
English (en)
Other versions
IT1096633B (it
Inventor
Bertotti Franco
Catellani Fausto
Gavioli Giuseppe
Original Assignee
Ates Componenti Elettron
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ates Componenti Elettron filed Critical Ates Componenti Elettron
Priority to IT24492/78A priority Critical patent/IT1096633B/it
Publication of IT7824492A0 publication Critical patent/IT7824492A0/it
Priority to US06/046,602 priority patent/US4245209A/en
Priority to FR7914957A priority patent/FR2428917A1/fr
Priority to DE2923799A priority patent/DE2923799C2/de
Priority to GB7920554A priority patent/GB2025128B/en
Application granted granted Critical
Publication of IT1096633B publication Critical patent/IT1096633B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/101—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including resistors or capacitors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/8605—Resistors with PN junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
IT24492/78A 1978-06-13 1978-06-13 Resistore diffuso in un corpo semiconduttore IT1096633B (it)

Priority Applications (5)

Application Number Priority Date Filing Date Title
IT24492/78A IT1096633B (it) 1978-06-13 1978-06-13 Resistore diffuso in un corpo semiconduttore
US06/046,602 US4245209A (en) 1978-06-13 1979-06-08 Voltage divider including a tapped resistor diffused in semiconductor substrate
FR7914957A FR2428917A1 (fr) 1978-06-13 1979-06-12 Resistance diffuse dans un semi-conducteur
DE2923799A DE2923799C2 (de) 1978-06-13 1979-06-12 Diffundierter Halbleiterwiderstand
GB7920554A GB2025128B (en) 1978-06-13 1979-06-13 Diffused resistor in a semiconductor body

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT24492/78A IT1096633B (it) 1978-06-13 1978-06-13 Resistore diffuso in un corpo semiconduttore

Publications (2)

Publication Number Publication Date
IT7824492A0 true IT7824492A0 (it) 1978-06-13
IT1096633B IT1096633B (it) 1985-08-26

Family

ID=11213740

Family Applications (1)

Application Number Title Priority Date Filing Date
IT24492/78A IT1096633B (it) 1978-06-13 1978-06-13 Resistore diffuso in un corpo semiconduttore

Country Status (5)

Country Link
US (1) US4245209A (it)
DE (1) DE2923799C2 (it)
FR (1) FR2428917A1 (it)
GB (1) GB2025128B (it)
IT (1) IT1096633B (it)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57100755A (en) * 1980-12-15 1982-06-23 Fujitsu Ltd Semiconductor device
US4578772A (en) * 1981-09-18 1986-03-25 Fujitsu Limited Voltage dividing circuit
IT1213214B (it) * 1984-09-05 1989-12-14 Ates Componenti Elettron Partitore di tensione resistivo per circuiti integrati.
US5268651A (en) * 1991-09-23 1993-12-07 Crystal Semiconductor Corporation Low drift resistor structure
US5339067A (en) * 1993-05-07 1994-08-16 Crystal Semiconductor Corporation Integrated voltage divider and circuit employing an integrated voltage divider
US5610079A (en) * 1995-06-19 1997-03-11 Reliance Electric Industrial Company Self-biased moat for parasitic current suppression in integrated circuits
JP3171240B2 (ja) * 1998-01-13 2001-05-28 日本電気株式会社 抵抗素子、それを用いた半導体装置およびこれらの製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE760029C (de) * 1940-04-27 1954-06-21 Siemens Schuckertwerke A G Widerstandskoerper fuer Schalt- oder Regelzwecke
GB1001908A (en) * 1962-08-31 1965-08-18 Texas Instruments Inc Semiconductor devices
GB1236580A (en) * 1967-12-20 1971-06-23 Sangamo Weston Improvements in or relating to electrical resistors
NL6907227A (it) * 1969-05-10 1970-11-12
IT1115654B (it) * 1977-05-04 1986-02-03 Ates Componenti Elettron Partitore di tensione diffuso per circuito integrato monolitico

Also Published As

Publication number Publication date
US4245209A (en) 1981-01-13
GB2025128A (en) 1980-01-16
FR2428917B1 (it) 1982-08-13
IT1096633B (it) 1985-08-26
DE2923799C2 (de) 1986-09-25
GB2025128B (en) 1982-10-20
DE2923799A1 (de) 1979-12-20
FR2428917A1 (fr) 1980-01-11

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Legal Events

Date Code Title Description
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19970628