IT7925899A0 - Struttura a circuito integrato. - Google Patents

Struttura a circuito integrato.

Info

Publication number
IT7925899A0
IT7925899A0 IT7925899A IT2589979A IT7925899A0 IT 7925899 A0 IT7925899 A0 IT 7925899A0 IT 7925899 A IT7925899 A IT 7925899A IT 2589979 A IT2589979 A IT 2589979A IT 7925899 A0 IT7925899 A0 IT 7925899A0
Authority
IT
Italy
Prior art keywords
integrated circuit
circuit structure
integrated
circuit
Prior art date
Application number
IT7925899A
Other languages
English (en)
Other versions
IT1123267B (it
Inventor
Andrew Gordon Francis Dingwall
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of IT7925899A0 publication Critical patent/IT7925899A0/it
Application granted granted Critical
Publication of IT1123267B publication Critical patent/IT1123267B/it

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • H01L21/86Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body the insulating body being sapphire, e.g. silicon on sapphire structure, i.e. SOS
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/903FET configuration adapted for use as static memory cell

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
IT25899/79A 1978-10-03 1979-09-20 Struttura a circuito integrato IT1123267B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/948,103 US4724530A (en) 1978-10-03 1978-10-03 Five transistor CMOS memory cell including diodes

Publications (2)

Publication Number Publication Date
IT7925899A0 true IT7925899A0 (it) 1979-09-20
IT1123267B IT1123267B (it) 1986-04-30

Family

ID=25487263

Family Applications (1)

Application Number Title Priority Date Filing Date
IT25899/79A IT1123267B (it) 1978-10-03 1979-09-20 Struttura a circuito integrato

Country Status (6)

Country Link
US (1) US4724530A (it)
JP (1) JPS5550654A (it)
DE (1) DE2939290A1 (it)
FR (1) FR2438340A1 (it)
GB (1) GB2034517B (it)
IT (1) IT1123267B (it)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0040436B1 (en) * 1980-05-20 1986-04-30 Kabushiki Kaisha Toshiba Semiconductor device
JPS5721838A (en) * 1980-07-15 1982-02-04 Toshiba Corp Semiconductor device
JPS59130459A (ja) * 1983-01-17 1984-07-27 Hitachi Ltd 半導体メモリ集積回路装置
JPS6065547A (ja) * 1983-09-20 1985-04-15 Sharp Corp 半導体装置
DE3435752A1 (de) * 1984-09-28 1986-04-10 Siemens AG, 1000 Berlin und 8000 München Schaltung zur zwischenspeicherung digitaler signale
US5046044A (en) * 1988-12-21 1991-09-03 Texas Instruments Incorporated SEU hardened memory cell
US5016070A (en) * 1989-06-30 1991-05-14 Texas Instruments Incorporated Stacked CMOS sRAM with vertical transistors and cross-coupled capacitors
US5066613A (en) * 1989-07-13 1991-11-19 The United States Of America As Represented By The Secretary Of The Navy Process for making semiconductor-on-insulator device interconnects
JP2927463B2 (ja) * 1989-09-28 1999-07-28 株式会社日立製作所 半導体記憶装置
US5452247A (en) * 1989-12-20 1995-09-19 Fujitsu Limited Three-dimensional static random access memory device for avoiding disconnection among transistors of each memory cell
US5350933A (en) * 1990-02-21 1994-09-27 Sony Corporation Semiconductor CMOS static RAM with overlapping thin film transistors
US5206533A (en) * 1991-06-24 1993-04-27 Texas Instruments Incorporated Transistor device with resistive coupling
US5173754A (en) * 1992-02-03 1992-12-22 Micron Technology, Inc. Integrated circuit device with gate in sidewall
JPH06103781A (ja) * 1992-09-21 1994-04-15 Sharp Corp メモリセル回路
US5689471A (en) * 1995-01-24 1997-11-18 Cypress Semiconductor Corp. Dummy cell for providing a reference voltage in a memory array
US5453950A (en) * 1995-01-24 1995-09-26 Cypress Semiconductor Corp. Five transistor memory cell with shared power line
JP2748885B2 (ja) * 1995-03-06 1998-05-13 日本電気株式会社 半導体集積回路装置
US6667506B1 (en) 1999-04-06 2003-12-23 Peregrine Semiconductor Corporation Variable capacitor with programmability
US6690056B1 (en) 1999-04-06 2004-02-10 Peregrine Semiconductor Corporation EEPROM cell on SOI
US6205049B1 (en) 1999-08-26 2001-03-20 Integrated Device Technology, Inc. Five-transistor SRAM cell
WO2005059955A2 (en) * 2003-11-18 2005-06-30 Halliburton Energy Services A high temperature memory device
CA2543909C (en) * 2003-11-18 2012-01-31 Halliburton Energy Services, Inc. High temperature electronic devices
US7442932B2 (en) * 2003-11-18 2008-10-28 Halliburton Energy Services, Inc. High temperature imaging device
KR100746220B1 (ko) * 2004-01-12 2007-08-03 삼성전자주식회사 적층된 노드 콘택 구조체들과 적층된 박막 트랜지스터들을채택하는 반도체 집적회로들 및 그 제조방법들
JP4805655B2 (ja) * 2005-10-28 2011-11-02 株式会社東芝 半導体記憶装置
US20090251960A1 (en) * 2008-04-07 2009-10-08 Halliburton Energy Services, Inc. High temperature memory device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3521242A (en) * 1967-05-02 1970-07-21 Rca Corp Complementary transistor write and ndro for memory cell
CH581904A5 (it) * 1974-08-29 1976-11-15 Centre Electron Horloger
US3990056A (en) * 1974-10-09 1976-11-02 Rockwell International Corporation High speed memory cell
US4189782A (en) * 1978-08-07 1980-02-19 Rca Corporation Memory organization
US4196443A (en) * 1978-08-25 1980-04-01 Rca Corporation Buried contact configuration for CMOS/SOS integrated circuits

Also Published As

Publication number Publication date
GB2034517B (en) 1983-05-11
FR2438340A1 (fr) 1980-04-30
GB2034517A (en) 1980-06-04
FR2438340B1 (it) 1984-12-07
IT1123267B (it) 1986-04-30
JPS616549B2 (it) 1986-02-27
DE2939290A1 (de) 1980-04-10
DE2939290C2 (it) 1989-03-23
US4724530A (en) 1988-02-09
JPS5550654A (en) 1980-04-12

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