IT1073394B - Dispositivo monoblocco con transistori formanti il circuito di darlington - Google Patents
Dispositivo monoblocco con transistori formanti il circuito di darlingtonInfo
- Publication number
- IT1073394B IT1073394B IT67288/77A IT6728877A IT1073394B IT 1073394 B IT1073394 B IT 1073394B IT 67288/77 A IT67288/77 A IT 67288/77A IT 6728877 A IT6728877 A IT 6728877A IT 1073394 B IT1073394 B IT 1073394B
- Authority
- IT
- Italy
- Prior art keywords
- darlington circuit
- forming transistors
- monoblock device
- monoblock
- transistors
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
- H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
- H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
- H01L27/0772—Vertical bipolar transistor in combination with resistors only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
- H01L27/0825—Combination of vertical direct transistors of the same conductivity type having different characteristics,(e.g. Darlington transistors)
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1345176A JPS5296870A (en) | 1976-02-10 | 1976-02-10 | Darlington transistor |
JP51096527A JPS5925390B2 (ja) | 1976-08-11 | 1976-08-11 | ダ−リントントランジスタ |
JP13193176A JPS5356976A (en) | 1976-11-02 | 1976-11-02 | Darlington transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
IT1073394B true IT1073394B (it) | 1985-04-17 |
Family
ID=27280256
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT67288/77A IT1073394B (it) | 1976-02-10 | 1977-02-09 | Dispositivo monoblocco con transistori formanti il circuito di darlington |
Country Status (7)
Country | Link |
---|---|
US (1) | US4136355A (it) |
AU (1) | AU506127B2 (it) |
CA (1) | CA1081367A (it) |
DE (1) | DE2705183C2 (it) |
FR (1) | FR2341203A1 (it) |
GB (1) | GB1549144A (it) |
IT (1) | IT1073394B (it) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5658261A (en) * | 1979-10-18 | 1981-05-21 | Toshiba Corp | Semiconductor device |
JPS5947467B2 (ja) * | 1981-09-01 | 1984-11-19 | セイコーインスツルメンツ株式会社 | 温度センサ−用半導体素子 |
JPS59104165A (ja) * | 1982-12-06 | 1984-06-15 | Mitsubishi Electric Corp | 電力用トランジスタ |
IT1221867B (it) * | 1983-05-16 | 1990-07-12 | Ates Componenti Elettron | Struttura di transistore bipolare di potenza con resistenza di bilanciamento di base incroporata by-passable |
JPH03288469A (ja) * | 1990-04-04 | 1991-12-18 | Toshiba Corp | 半導体装置 |
US9478537B2 (en) * | 2009-07-15 | 2016-10-25 | Cree, Inc. | High-gain wide bandgap darlington transistors and related methods of fabrication |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3510735A (en) * | 1967-04-13 | 1970-05-05 | Scient Data Systems Inc | Transistor with integral pinch resistor |
DE1574651C3 (de) * | 1968-03-01 | 1976-01-02 | Ibm Deutschland Gmbh, 7000 Stuttgart | Monolithisch integrierte Flip-Flop-Speicherzelle |
GB1263817A (en) * | 1969-11-10 | 1972-02-16 | Marconi Co Ltd | Improvements in or relating to integrated circuits |
US3836995A (en) * | 1973-05-25 | 1974-09-17 | Rca Corp | Semiconductor darlington circuit |
US3836996A (en) * | 1973-09-26 | 1974-09-17 | Rca Corp | Semiconductor darlington circuit |
US3836997A (en) * | 1973-09-26 | 1974-09-17 | Rca Corp | Semiconductor darlington circuit |
US3913213A (en) * | 1974-08-02 | 1975-10-21 | Trw Inc | Integrated circuit transistor switch |
-
1977
- 1977-02-03 US US05/765,426 patent/US4136355A/en not_active Expired - Lifetime
- 1977-02-08 DE DE2705183A patent/DE2705183C2/de not_active Expired
- 1977-02-09 FR FR7703671A patent/FR2341203A1/fr active Granted
- 1977-02-09 IT IT67288/77A patent/IT1073394B/it active
- 1977-02-09 CA CA271,388A patent/CA1081367A/en not_active Expired
- 1977-02-10 GB GB5513/77A patent/GB1549144A/en not_active Expired
- 1977-02-10 AU AU22179/77A patent/AU506127B2/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
CA1081367A (en) | 1980-07-08 |
AU506127B2 (en) | 1979-12-13 |
FR2341203A1 (fr) | 1977-09-09 |
AU2217977A (en) | 1978-08-17 |
DE2705183C2 (de) | 1982-05-27 |
US4136355A (en) | 1979-01-23 |
GB1549144A (en) | 1979-08-01 |
DE2705183A1 (de) | 1977-08-25 |
FR2341203B1 (it) | 1979-10-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
TA | Fee payment date (situation as of event date), data collected since 19931001 |
Effective date: 19950227 |