IT1068569B - Diodo zener del tipo integrato - Google Patents
Diodo zener del tipo integratoInfo
- Publication number
- IT1068569B IT1068569B IT25243/76A IT2524376A IT1068569B IT 1068569 B IT1068569 B IT 1068569B IT 25243/76 A IT25243/76 A IT 25243/76A IT 2524376 A IT2524376 A IT 2524376A IT 1068569 B IT1068569 B IT 1068569B
- Authority
- IT
- Italy
- Prior art keywords
- zener diode
- integrated type
- type zener
- integrated
- diode
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/22—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
- H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
- H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
- H01L27/0772—Vertical bipolar transistor in combination with resistors only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0814—Diodes only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0804—Emitter regions of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/866—Zener diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Nonlinear Science (AREA)
- Automation & Control Theory (AREA)
- Radar, Positioning & Navigation (AREA)
- Electromagnetism (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2532847A DE2532847C2 (de) | 1975-07-23 | 1975-07-23 | Integrierte Schaltung mit Zenerdiodenkennlinie |
Publications (1)
Publication Number | Publication Date |
---|---|
IT1068569B true IT1068569B (it) | 1985-03-21 |
Family
ID=5952201
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT25243/76A IT1068569B (it) | 1975-07-23 | 1976-07-13 | Diodo zener del tipo integrato |
Country Status (4)
Country | Link |
---|---|
US (1) | US4028563A (de) |
DE (1) | DE2532847C2 (de) |
FR (1) | FR2319200A1 (de) |
IT (1) | IT1068569B (de) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4646427A (en) * | 1984-06-28 | 1987-03-03 | Motorola, Inc. | Method of electrically adjusting the zener knee of a lateral polysilicon zener diode |
US4775643A (en) * | 1987-06-01 | 1988-10-04 | Motorola Inc. | Mesa zener diode and method of manufacture thereof |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3482111A (en) * | 1966-03-04 | 1969-12-02 | Ncr Co | High speed logical circuit |
DE1538440B2 (de) * | 1966-11-23 | 1972-03-16 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Schaltungsanordnung zur gleichspannungsstabilisierung nach art einer z diode |
DE1614799A1 (de) * | 1967-04-08 | 1970-12-23 | Telefunken Patent | Halbleiteranordnung |
DE1589707B2 (de) * | 1967-12-09 | 1971-02-04 | Deutsche ITT Industries GmbH 7800 Freiburg | Temperaturkompensierte Z Diodenanord nung |
DE1638144A1 (de) * | 1968-01-18 | 1971-06-16 | Heinz Guenther | Schaltungsanordnung zur Nachbildung der Strom-Spannungscharakteristik einer Zenerdiode |
US3633052A (en) * | 1970-05-13 | 1972-01-04 | Nat Semiconductor Corp | Low-noise integrated circuit zener voltage reference device including a multiple collector lateral transistor |
DE2038983A1 (de) * | 1970-08-05 | 1972-02-10 | Siemens Ag | Elektrischer Zweipol |
DE2325552C3 (de) * | 1973-05-19 | 1979-08-16 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Zweipolige monolithisch integrierte Schaltung mit Z-Diodenkennlinie |
US3996115A (en) * | 1975-08-25 | 1976-12-07 | Joseph W. Aidlin | Process for forming an anodic oxide coating on metals |
-
1975
- 1975-07-23 DE DE2532847A patent/DE2532847C2/de not_active Expired
-
1976
- 1976-06-25 US US05/699,751 patent/US4028563A/en not_active Expired - Lifetime
- 1976-07-13 IT IT25243/76A patent/IT1068569B/it active
- 1976-07-16 FR FR7621826A patent/FR2319200A1/fr active Granted
Also Published As
Publication number | Publication date |
---|---|
US4028563A (en) | 1977-06-07 |
DE2532847A1 (de) | 1977-01-27 |
DE2532847C2 (de) | 1982-08-19 |
FR2319200A1 (fr) | 1977-02-18 |
FR2319200B1 (de) | 1983-06-17 |
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