IT1060022B - Circuito integrato presentante uno strato conduttivo di silicio e metodo di fabbricazione dello stesso - Google Patents
Circuito integrato presentante uno strato conduttivo di silicio e metodo di fabbricazione dello stessoInfo
- Publication number
- IT1060022B IT1060022B IT22667/76A IT2266776A IT1060022B IT 1060022 B IT1060022 B IT 1060022B IT 22667/76 A IT22667/76 A IT 22667/76A IT 2266776 A IT2266776 A IT 2266776A IT 1060022 B IT1060022 B IT 1060022B
- Authority
- IT
- Italy
- Prior art keywords
- silicon
- manufacturing
- integrated circuit
- conductive layer
- circuit presenting
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/02—Contacts, special
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/051—Etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/085—Isolated-integrated
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/122—Polycrystalline
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/15—Silicon on sapphire SOS
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/969—Simultaneous formation of monocrystalline and polycrystalline regions
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Thin Film Transistor (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/579,967 US4016016A (en) | 1975-05-22 | 1975-05-22 | Method of simultaneously forming a polycrystalline silicon gate and a single crystal extension of said gate in silicon on sapphire MOS devices |
Publications (1)
Publication Number | Publication Date |
---|---|
IT1060022B true IT1060022B (it) | 1982-07-10 |
Family
ID=24319091
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT22667/76A IT1060022B (it) | 1975-05-22 | 1976-04-26 | Circuito integrato presentante uno strato conduttivo di silicio e metodo di fabbricazione dello stesso |
Country Status (6)
Country | Link |
---|---|
US (1) | US4016016A (it) |
JP (1) | JPS51144193A (it) |
DE (1) | DE2621139A1 (it) |
FR (1) | FR2312120A1 (it) |
GB (1) | GB1543348A (it) |
IT (1) | IT1060022B (it) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4179528A (en) * | 1977-05-18 | 1979-12-18 | Eastman Kodak Company | Method of making silicon device with uniformly thick polysilicon |
US4274193A (en) * | 1979-07-05 | 1981-06-23 | Rca Corporation | Method for making a closed gate MOS transistor with self-aligned contacts |
US4272881A (en) * | 1979-07-20 | 1981-06-16 | Rca Corporation | Method for making a closed gate MOS transistor with self-aligned contacts with dual passivation layer |
FR2501912A1 (fr) * | 1981-03-13 | 1982-09-17 | Efcis | Transistor bipolaire lateral sur isolant et son procede de fabrication |
US4883986A (en) * | 1981-05-19 | 1989-11-28 | Tokyo Shibaura Denki Kabushiki Kaisha | High density semiconductor circuit using CMOS transistors |
US4751554A (en) * | 1985-09-27 | 1988-06-14 | Rca Corporation | Silicon-on-sapphire integrated circuit and method of making the same |
US4758529A (en) * | 1985-10-31 | 1988-07-19 | Rca Corporation | Method of forming an improved gate dielectric for a MOSFET on an insulating substrate |
US4722912A (en) * | 1986-04-28 | 1988-02-02 | Rca Corporation | Method of forming a semiconductor structure |
US4735917A (en) * | 1986-04-28 | 1988-04-05 | General Electric Company | Silicon-on-sapphire integrated circuits |
US4755481A (en) * | 1986-05-15 | 1988-07-05 | General Electric Company | Method of making a silicon-on-insulator transistor |
US5185283A (en) * | 1987-10-22 | 1993-02-09 | Matsushita Electronics Corporation | Method of making master slice type integrated circuit device |
US4897366A (en) * | 1989-01-18 | 1990-01-30 | Harris Corporation | Method of making silicon-on-insulator islands |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3519901A (en) * | 1968-01-29 | 1970-07-07 | Texas Instruments Inc | Bi-layer insulation structure including polycrystalline semiconductor material for integrated circuit isolation |
US3584183A (en) * | 1968-10-03 | 1971-06-08 | North American Rockwell | Laser encoding of diode arrays |
US3739238A (en) * | 1969-09-24 | 1973-06-12 | Tokyo Shibaura Electric Co | Semiconductor device with a field effect transistor |
US3749614A (en) * | 1970-09-14 | 1973-07-31 | Rca Corp | Fabrication of semiconductor devices |
US3796597A (en) * | 1970-11-02 | 1974-03-12 | Texas Instruments Inc | Method of producing semiconducting monocrystalline silicon on spinel substrates |
US3699646A (en) * | 1970-12-28 | 1972-10-24 | Intel Corp | Integrated circuit structure and method for making integrated circuit structure |
US3750268A (en) * | 1971-09-10 | 1973-08-07 | Motorola Inc | Poly-silicon electrodes for c-igfets |
US3821781A (en) * | 1972-11-01 | 1974-06-28 | Ibm | Complementary field effect transistors having p doped silicon gates |
DE2303916A1 (de) * | 1973-01-26 | 1974-08-01 | Siemens Ag | Integrierte schaltung mit feldeffekttransistoren |
US3890632A (en) * | 1973-12-03 | 1975-06-17 | Rca Corp | Stabilized semiconductor devices and method of making same |
-
1975
- 1975-05-22 US US05/579,967 patent/US4016016A/en not_active Expired - Lifetime
-
1976
- 1976-04-26 IT IT22667/76A patent/IT1060022B/it active
- 1976-05-13 GB GB19729/76A patent/GB1543348A/en not_active Expired
- 1976-05-13 DE DE19762621139 patent/DE2621139A1/de active Pending
- 1976-05-20 JP JP51058988A patent/JPS51144193A/ja active Pending
- 1976-05-21 FR FR7615466A patent/FR2312120A1/fr active Granted
Also Published As
Publication number | Publication date |
---|---|
FR2312120B1 (it) | 1979-09-07 |
FR2312120A1 (fr) | 1976-12-17 |
US4016016A (en) | 1977-04-05 |
GB1543348A (en) | 1979-04-04 |
JPS51144193A (en) | 1976-12-10 |
DE2621139A1 (de) | 1976-12-09 |
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