IT1041882B - Memoria dinamica a semiconduttori e relativo sistema di recarica - Google Patents

Memoria dinamica a semiconduttori e relativo sistema di recarica

Info

Publication number
IT1041882B
IT1041882B IT26447/75A IT2644775A IT1041882B IT 1041882 B IT1041882 B IT 1041882B IT 26447/75 A IT26447/75 A IT 26447/75A IT 2644775 A IT2644775 A IT 2644775A IT 1041882 B IT1041882 B IT 1041882B
Authority
IT
Italy
Prior art keywords
relative
dynamic memory
semiconductor dynamic
recharge system
recharge
Prior art date
Application number
IT26447/75A
Other languages
English (en)
Italian (it)
Inventor
E Cislaghi
R Pederzini
A Scotti
Original Assignee
Honeywell Inf Systems
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell Inf Systems filed Critical Honeywell Inf Systems
Priority to IT26447/75A priority Critical patent/IT1041882B/it
Priority to FR7624024A priority patent/FR2334169A1/fr
Priority to US05/714,177 priority patent/US4106108A/en
Priority to DE2637004A priority patent/DE2637004C2/de
Priority to GB34569/76A priority patent/GB1510948A/en
Application granted granted Critical
Publication of IT1041882B publication Critical patent/IT1041882B/it
Priority to MY126/82A priority patent/MY8200126A/xx

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G11C11/40603—Arbitration, priority and concurrent access to memory cells for read/write or refresh operations
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
IT26447/75A 1975-08-20 1975-08-20 Memoria dinamica a semiconduttori e relativo sistema di recarica IT1041882B (it)

Priority Applications (6)

Application Number Priority Date Filing Date Title
IT26447/75A IT1041882B (it) 1975-08-20 1975-08-20 Memoria dinamica a semiconduttori e relativo sistema di recarica
FR7624024A FR2334169A1 (fr) 1975-08-20 1976-08-06 Memoire dynamique a semi-conducteur munie d'un circuit de regeneration perfectionne
US05/714,177 US4106108A (en) 1975-08-20 1976-08-13 Semiconductor dynamic memory and related refreshing system
DE2637004A DE2637004C2 (de) 1975-08-20 1976-08-17 Dynamischer Halbleiterspeicher
GB34569/76A GB1510948A (en) 1975-08-20 1976-08-19 Refreshing semiconductor memories
MY126/82A MY8200126A (en) 1975-08-20 1982-12-30 Refreshing semiconductor memories

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT26447/75A IT1041882B (it) 1975-08-20 1975-08-20 Memoria dinamica a semiconduttori e relativo sistema di recarica

Publications (1)

Publication Number Publication Date
IT1041882B true IT1041882B (it) 1980-01-10

Family

ID=11219525

Family Applications (1)

Application Number Title Priority Date Filing Date
IT26447/75A IT1041882B (it) 1975-08-20 1975-08-20 Memoria dinamica a semiconduttori e relativo sistema di recarica

Country Status (6)

Country Link
US (1) US4106108A (US06256357-20010703-M00001.png)
DE (1) DE2637004C2 (US06256357-20010703-M00001.png)
FR (1) FR2334169A1 (US06256357-20010703-M00001.png)
GB (1) GB1510948A (US06256357-20010703-M00001.png)
IT (1) IT1041882B (US06256357-20010703-M00001.png)
MY (1) MY8200126A (US06256357-20010703-M00001.png)

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4218753A (en) * 1977-02-28 1980-08-19 Data General Corporation Microcode-controlled memory refresh apparatus for a data processing system
IT1117301B (it) * 1977-05-25 1986-02-17 Olivetti & Co Spa Calcotore elettronico con dispositivo di rinfresco di una memoria operativa dinamica
US4185323A (en) * 1978-07-20 1980-01-22 Honeywell Information Systems Inc. Dynamic memory system which includes apparatus for performing refresh operations in parallel with normal memory operations
US4249247A (en) * 1979-01-08 1981-02-03 Ncr Corporation Refresh system for dynamic RAM memory
US4241425A (en) * 1979-02-09 1980-12-23 Bell Telephone Laboratories, Incorporated Organization for dynamic random access memory
US4317169A (en) * 1979-02-14 1982-02-23 Honeywell Information Systems Inc. Data processing system having centralized memory refresh
US4387423A (en) * 1979-02-16 1983-06-07 Honeywell Information Systems Inc. Microprogrammed system having single microstep apparatus
JPS55132593A (en) * 1979-04-02 1980-10-15 Fujitsu Ltd Refresh control method for memory unit
US4449183A (en) * 1979-07-09 1984-05-15 Digital Equipment Corporation Arbitration scheme for a multiported shared functional device for use in multiprocessing systems
US4310880A (en) * 1979-09-10 1982-01-12 Nixdorf Computer Corporation High-speed synchronous computer using pipelined registers and a two-level fixed priority circuit
FR2474227A1 (fr) * 1980-01-17 1981-07-24 Cii Honeywell Bull Procede de rafraichissement pour banc de memoire a circuit " mos " et sequenceur correspondant
US4328566A (en) * 1980-06-24 1982-05-04 Pitney Bowes Inc. Dynamic memory refresh system with additional refresh cycles
DE3133838C2 (de) * 1981-08-27 1986-11-13 Otto 7750 Konstanz Müller Schaltungsanordnung zur Übergabe des Refresh-Signals an einem Halbleiterspeicher
US4567571A (en) * 1982-09-07 1986-01-28 Honeywell Information Systems, Inc. Memory control for refreshing in a step mode
US4546273A (en) * 1983-01-11 1985-10-08 Burroughs Corporation Dynamic re-programmable PLA
US4625301A (en) * 1983-11-30 1986-11-25 Tandy Corporation Dynamic memory refresh circuit
US4625296A (en) * 1984-01-17 1986-11-25 The Perkin-Elmer Corporation Memory refresh circuit with varying system transparency
JPS6142795A (ja) * 1984-08-03 1986-03-01 Toshiba Corp 半導体記憶装置の行デコ−ダ系
US4758993A (en) * 1984-11-19 1988-07-19 Fujitsu Limited Random access memory device formed on a semiconductor substrate having an array of memory cells divided into sub-arrays
US4701843A (en) * 1985-04-01 1987-10-20 Ncr Corporation Refresh system for a page addressable memory
JPH0612613B2 (ja) * 1986-03-18 1994-02-16 富士通株式会社 半導体記憶装置
US4831594A (en) * 1986-09-25 1989-05-16 Texas Instrument, Inc. Process and device for refreshing an array of dynamic memory cells during precharge of the column lines
EP0310712B1 (en) * 1987-10-05 1993-09-01 Océ-Nederland B.V. Front-end system for a raster output scanner
US5193165A (en) * 1989-12-13 1993-03-09 International Business Machines Corporation Memory card refresh buffer
US5265231A (en) * 1991-02-08 1993-11-23 Thinking Machines Corporation Refresh control arrangement and a method for refreshing a plurality of random access memory banks in a memory system
US5465339A (en) * 1991-02-27 1995-11-07 Vlsi Technology, Inc. Decoupled refresh on local and system busses in a PC/at or similar microprocessor environment
JPH04372790A (ja) * 1991-06-21 1992-12-25 Sharp Corp 半導体記憶装置
US5291443A (en) * 1991-06-26 1994-03-01 Micron Technology, Inc. Simultaneous read and refresh of different rows in a dram
KR950014089B1 (ko) * 1993-11-08 1995-11-21 현대전자산업주식회사 동기식 디램의 히든 셀프 리프레쉬 방법 및 장치
US5748547A (en) * 1996-05-24 1998-05-05 Shau; Jeng-Jye High performance semiconductor memory devices having multiple dimension bit lines
EP0811984B1 (de) * 1996-06-04 2001-05-02 Infineon Technologies AG Verfahren zum Lesen und Auffrischen eines dynamischen Halbleiterspeichers
US5991851A (en) * 1997-05-02 1999-11-23 Enhanced Memory Systems, Inc. Enhanced signal processing random access memory device utilizing a DRAM memory array integrated with an associated SRAM cache and internal refresh control
JPH11353872A (ja) * 1998-06-04 1999-12-24 Oki Electric Ind Co Ltd メモリインタフェース回路
JP4768163B2 (ja) * 2001-08-03 2011-09-07 富士通セミコンダクター株式会社 半導体メモリ
US7330391B2 (en) * 2005-10-17 2008-02-12 Infineon Technologies Ag Memory having directed auto-refresh
JP4816911B2 (ja) * 2006-02-07 2011-11-16 日本電気株式会社 メモリの同期化方法及びリフレッシュ制御回路
JP4912718B2 (ja) * 2006-03-30 2012-04-11 富士通セミコンダクター株式会社 ダイナミック型半導体メモリ
JP5018074B2 (ja) * 2006-12-22 2012-09-05 富士通セミコンダクター株式会社 メモリ装置，メモリコントローラ及びメモリシステム
JP5157207B2 (ja) * 2007-03-16 2013-03-06 富士通セミコンダクター株式会社 半導体メモリ、メモリコントローラ、システムおよび半導体メモリの動作方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3800295A (en) * 1971-12-30 1974-03-26 Ibm Asynchronously operated memory system
US3786437A (en) * 1972-01-03 1974-01-15 Honeywell Inf Systems Random access memory system utilizing an inverting cell concept
US3737879A (en) * 1972-01-05 1973-06-05 Mos Technology Inc Self-refreshing memory
US3748651A (en) * 1972-02-16 1973-07-24 Cogar Corp Refresh control for add-on semiconductor memory
DE2247835C3 (de) * 1972-09-29 1978-10-05 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Regenerieren der Speicherinhalte von MOS-Speichern und MOS-Speicher zur Durchführung dieses Verfahrens

Also Published As

Publication number Publication date
US4106108A (en) 1978-08-08
FR2334169A1 (fr) 1977-07-01
FR2334169B1 (US06256357-20010703-M00001.png) 1981-12-18
DE2637004C2 (de) 1986-10-09
DE2637004A1 (de) 1977-03-03
MY8200126A (en) 1982-12-31
GB1510948A (en) 1978-05-17

Similar Documents

Publication Publication Date Title
IT1041882B (it) Memoria dinamica a semiconduttori e relativo sistema di recarica
NL7500550A (nl) Halfgeleider-geheugeninrichting.
IT1038938B (it) Sistema di memoria perfezionato
NL7614537A (nl) Halfgeleidergeheugeninrichting.
JPS5269240A (en) Semiconductor memory system
SE7610137L (sv) Minnessystem
AR205155A1 (es) Dispositivo de memoria magnetica
NL178729C (nl) Halfgeleidergeheugen.
NL7704864A (nl) Halfgeleidergeheugen.
IT1004290B (it) Dispositivo a circuito integrato e relativo metodo di integrazione
IT1055161B (it) Memoria a sola lettura a semiconduttore
NL190211C (nl) Dynamische halfgeleidergeheugeninrichting.
NL7709931A (nl) Halfgeleider-geheugeninrichting.
IT1038051B (it) Sistema di memoria perfezionato
NL179244C (nl) Halfgeleidergeheugen.
NL7514642A (nl) Halfgeleidergeheugeninrichting.
NL7607984A (nl) Halfgeleidergeheugen.
NL7613470A (nl) Geintegreerd permanent geheugen.
FR2306506A1 (fr) Memoire dynamique a semi-conducteur
NL7712819A (nl) Dynamische geheugeninrichting.
IT1002272B (it) Sistema di ricarica in memoria a semiconduttori
DD130698A5 (de) Halbleiterspeicher
AT334662B (de) Hochintegrierter halbleiterspeicher
NL7710360A (nl) Halfgeleidergeheugen.
IT1004654B (it) Apparecchio di magnetizzazione multipolare