IT1039434B - Recipiente di reazione per depositare un materiale semiconduttore su supporti riscaldati - Google Patents
Recipiente di reazione per depositare un materiale semiconduttore su supporti riscaldatiInfo
- Publication number
- IT1039434B IT1039434B IT2485675A IT2485675A IT1039434B IT 1039434 B IT1039434 B IT 1039434B IT 2485675 A IT2485675 A IT 2485675A IT 2485675 A IT2485675 A IT 2485675A IT 1039434 B IT1039434 B IT 1039434B
- Authority
- IT
- Italy
- Prior art keywords
- gas
- reaction
- electrodes
- semiconductor
- deposn
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Vapour Deposition (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2432383A DE2432383C2 (de) | 1973-11-22 | 1974-07-05 | Reaktionsgefäß zum Abscheiden von Halbleitermaterial auf erhitzte Trägerkörper |
Publications (1)
Publication Number | Publication Date |
---|---|
IT1039434B true IT1039434B (it) | 1979-12-10 |
Family
ID=5919817
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT2485675A IT1039434B (it) | 1974-07-05 | 1975-06-27 | Recipiente di reazione per depositare un materiale semiconduttore su supporti riscaldati |
Country Status (3)
Country | Link |
---|---|
BE (1) | BE826870A (fr) |
IT (1) | IT1039434B (fr) |
PL (1) | PL99018B1 (fr) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5338574B2 (ja) * | 2008-09-09 | 2013-11-13 | 三菱マテリアル株式会社 | 多結晶シリコン製造装置 |
-
1975
- 1975-03-19 BE BE154492A patent/BE826870A/fr unknown
- 1975-06-27 IT IT2485675A patent/IT1039434B/it active
- 1975-07-04 PL PL18182675A patent/PL99018B1/pl unknown
Also Published As
Publication number | Publication date |
---|---|
BE826870A (fr) | 1975-07-16 |
PL99018B1 (pl) | 1978-06-30 |
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