IT1025714B - ZENER DIODE WITH IMPROVED THRESHOLD VOLTAGE AND REDUCED ELECTRICAL NOISE AND PROCEDURE FOR ITS FABERICAATION - Google Patents

ZENER DIODE WITH IMPROVED THRESHOLD VOLTAGE AND REDUCED ELECTRICAL NOISE AND PROCEDURE FOR ITS FABERICAATION

Info

Publication number
IT1025714B
IT1025714B IT2945374A IT2945374A IT1025714B IT 1025714 B IT1025714 B IT 1025714B IT 2945374 A IT2945374 A IT 2945374A IT 2945374 A IT2945374 A IT 2945374A IT 1025714 B IT1025714 B IT 1025714B
Authority
IT
Italy
Prior art keywords
wafers
layer
semi
molybdenum
layers
Prior art date
Application number
IT2945374A
Other languages
Italian (it)
Original Assignee
Silec Semi Conducteurs
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Silec Semi Conducteurs filed Critical Silec Semi Conducteurs
Application granted granted Critical
Publication of IT1025714B publication Critical patent/IT1025714B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02658—Pretreatments
    • H01L21/02661—In-situ cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

1494905 Semi-conductor device manufacture SILEC-SEMI-CONDUCTEURS 28 Nov 1974 [28 Nov 1973] 51683/74 Heading H1K In the manufacture of a Zener or avalanche breakdown diode involving sequentially coating a semi-conductor substrate with a layer of heavily doped semi-conductor material and at least one layer of metallization all the layers are deposited by ionic sputtering of target materials in a vacuum which is maintained during and between formation of the individual layers. As described 200 ohm cm. P-type silicon wafers are cleared as by etching followed by washing in aqueous and organic solvents and introduced into a sputtering apparatus the details of which are described with reference to Figs. 3 and 4 (not shown). Then with the wafers heated to above 400‹ C. adsorbed impurities are removed by bombardment with an argon ion beam first from the targets and then from the wafers to provide a dislocation free surface. The wafers are then raised to 900‹ C. and an N + layer 1000-1500 Š thick deposited thereon by directing the beam on an arsenic or antimony-doped silicon target. With the wafers at room temperature the beam is directed successively on molybdenum and nickel targets to form layers of molybdenum and nickel respectively 1000 A and 2 Á thick and optionally an intermediate layer of graded composition. After inverting the wafers automatically, or after breaking the vacuum, manually a P + layer of boron-doped silicon and contact layers of molybdenum and nickel are deposited similarly on their back faces.
IT2945374A 1973-11-28 1974-11-14 ZENER DIODE WITH IMPROVED THRESHOLD VOLTAGE AND REDUCED ELECTRICAL NOISE AND PROCEDURE FOR ITS FABERICAATION IT1025714B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7342381A FR2252652B1 (en) 1973-11-28 1973-11-28

Publications (1)

Publication Number Publication Date
IT1025714B true IT1025714B (en) 1978-08-30

Family

ID=9128391

Family Applications (1)

Application Number Title Priority Date Filing Date
IT2945374A IT1025714B (en) 1973-11-28 1974-11-14 ZENER DIODE WITH IMPROVED THRESHOLD VOLTAGE AND REDUCED ELECTRICAL NOISE AND PROCEDURE FOR ITS FABERICAATION

Country Status (5)

Country Link
BE (1) BE821877A (en)
DE (1) DE2456129A1 (en)
FR (1) FR2252652B1 (en)
GB (1) GB1494905A (en)
IT (1) IT1025714B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3310044A1 (en) * 1983-03-19 1984-09-20 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt METHOD AND ARRANGEMENT FOR COATING A SUBSTRATE
JP4129106B2 (en) * 1999-10-27 2008-08-06 三菱電機株式会社 Semiconductor device

Also Published As

Publication number Publication date
DE2456129A1 (en) 1975-06-05
BE821877A (en) 1975-05-05
GB1494905A (en) 1977-12-14
FR2252652A1 (en) 1975-06-20
FR2252652B1 (en) 1977-06-10

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