BE821877A - NEW ZENER DIODES WITH IMPROVED THRESHOLD VOLTAGE AND REDUCED ELECTRICAL NOISE AND MANUFACTURING PROCESS - Google Patents

NEW ZENER DIODES WITH IMPROVED THRESHOLD VOLTAGE AND REDUCED ELECTRICAL NOISE AND MANUFACTURING PROCESS

Info

Publication number
BE821877A
BE821877A BE150231A BE150231A BE821877A BE 821877 A BE821877 A BE 821877A BE 150231 A BE150231 A BE 150231A BE 150231 A BE150231 A BE 150231A BE 821877 A BE821877 A BE 821877A
Authority
BE
Belgium
Prior art keywords
manufacturing process
threshold voltage
zener diodes
electrical noise
reduced electrical
Prior art date
Application number
BE150231A
Other languages
French (fr)
Inventor
G Dumas
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE821877A publication Critical patent/BE821877A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02658—Pretreatments
    • H01L21/02661—In-situ cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
BE150231A 1973-11-28 1974-11-05 NEW ZENER DIODES WITH IMPROVED THRESHOLD VOLTAGE AND REDUCED ELECTRICAL NOISE AND MANUFACTURING PROCESS BE821877A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7342381A FR2252652B1 (en) 1973-11-28 1973-11-28

Publications (1)

Publication Number Publication Date
BE821877A true BE821877A (en) 1975-05-05

Family

ID=9128391

Family Applications (1)

Application Number Title Priority Date Filing Date
BE150231A BE821877A (en) 1973-11-28 1974-11-05 NEW ZENER DIODES WITH IMPROVED THRESHOLD VOLTAGE AND REDUCED ELECTRICAL NOISE AND MANUFACTURING PROCESS

Country Status (5)

Country Link
BE (1) BE821877A (en)
DE (1) DE2456129A1 (en)
FR (1) FR2252652B1 (en)
GB (1) GB1494905A (en)
IT (1) IT1025714B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3310044A1 (en) * 1983-03-19 1984-09-20 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt METHOD AND ARRANGEMENT FOR COATING A SUBSTRATE
JP4129106B2 (en) * 1999-10-27 2008-08-06 三菱電機株式会社 Semiconductor device

Also Published As

Publication number Publication date
DE2456129A1 (en) 1975-06-05
GB1494905A (en) 1977-12-14
IT1025714B (en) 1978-08-30
FR2252652A1 (en) 1975-06-20
FR2252652B1 (en) 1977-06-10

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