IT1007011B - Circuito integrato con transistori a effetto di campo - Google Patents

Circuito integrato con transistori a effetto di campo

Info

Publication number
IT1007011B
IT1007011B IT1964874A IT1964874A IT1007011B IT 1007011 B IT1007011 B IT 1007011B IT 1964874 A IT1964874 A IT 1964874A IT 1964874 A IT1964874 A IT 1964874A IT 1007011 B IT1007011 B IT 1007011B
Authority
IT
Italy
Prior art keywords
integrated circuit
field effect
effect transistors
transistors
field
Prior art date
Application number
IT1964874A
Other languages
English (en)
Italian (it)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of IT1007011B publication Critical patent/IT1007011B/it

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
IT1964874A 1973-01-26 1974-01-21 Circuito integrato con transistori a effetto di campo IT1007011B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19732303916 DE2303916A1 (de) 1973-01-26 1973-01-26 Integrierte schaltung mit feldeffekttransistoren

Publications (1)

Publication Number Publication Date
IT1007011B true IT1007011B (it) 1976-10-30

Family

ID=5870074

Family Applications (1)

Application Number Title Priority Date Filing Date
IT1964874A IT1007011B (it) 1973-01-26 1974-01-21 Circuito integrato con transistori a effetto di campo

Country Status (12)

Country Link
JP (1) JPS49110281A (un)
AT (1) AT339375B (un)
BE (1) BE810156A (un)
CA (1) CA1013482A (un)
CH (1) CH564850A5 (un)
DE (1) DE2303916A1 (un)
FR (1) FR2215704B1 (un)
GB (1) GB1413900A (un)
IT (1) IT1007011B (un)
LU (1) LU69236A1 (un)
NL (1) NL7400934A (un)
SE (1) SE385752B (un)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5080783A (un) * 1973-11-14 1975-07-01
JPS5810118B2 (ja) * 1974-08-28 1983-02-24 株式会社東芝 カイヘイブタ ノ アンゼンソウチ
US4016016A (en) * 1975-05-22 1977-04-05 Rca Corporation Method of simultaneously forming a polycrystalline silicon gate and a single crystal extension of said gate in silicon on sapphire MOS devices
JPS5610958A (en) * 1979-07-10 1981-02-03 Toshiba Corp Semiconductor circuit

Also Published As

Publication number Publication date
CA1013482A (en) 1977-07-05
LU69236A1 (un) 1974-04-10
NL7400934A (un) 1974-07-30
CH564850A5 (un) 1975-07-31
GB1413900A (en) 1975-11-12
DE2303916A1 (de) 1974-08-01
BE810156A (fr) 1974-05-16
JPS49110281A (un) 1974-10-21
FR2215704A1 (un) 1974-08-23
FR2215704B1 (un) 1977-08-26
AT339375B (de) 1977-10-10
ATA1051373A (de) 1977-02-15
SE385752B (sv) 1976-07-19

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