IT1000547B - Procedimento per la diffusione simultanea dei composti intermetal lici dei gruppi 3 e v in un wafer semiconduttore - Google Patents

Procedimento per la diffusione simultanea dei composti intermetal lici dei gruppi 3 e v in un wafer semiconduttore

Info

Publication number
IT1000547B
IT1000547B IT70740/73A IT7074073A IT1000547B IT 1000547 B IT1000547 B IT 1000547B IT 70740/73 A IT70740/73 A IT 70740/73A IT 7074073 A IT7074073 A IT 7074073A IT 1000547 B IT1000547 B IT 1000547B
Authority
IT
Italy
Prior art keywords
intermetal
procedure
groups
semiconductor wafer
simultaneous diffusion
Prior art date
Application number
IT70740/73A
Other languages
English (en)
Italian (it)
Original Assignee
Int Rectifier Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Int Rectifier Corp filed Critical Int Rectifier Corp
Application granted granted Critical
Publication of IT1000547B publication Critical patent/IT1000547B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/18—Controlling or regulating
    • C30B31/185—Pattern diffusion, e.g. by using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S252/00—Compositions
    • Y10S252/95—Doping agent source material
    • Y10S252/951—Doping agent source material for vapor transport
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/923—Diffusion through a layer

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thyristors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Bipolar Transistors (AREA)
IT70740/73A 1972-12-20 1973-12-18 Procedimento per la diffusione simultanea dei composti intermetal lici dei gruppi 3 e v in un wafer semiconduttore IT1000547B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US31687072A 1972-12-20 1972-12-20

Publications (1)

Publication Number Publication Date
IT1000547B true IT1000547B (it) 1976-04-10

Family

ID=23231064

Family Applications (1)

Application Number Title Priority Date Filing Date
IT70740/73A IT1000547B (it) 1972-12-20 1973-12-18 Procedimento per la diffusione simultanea dei composti intermetal lici dei gruppi 3 e v in un wafer semiconduttore

Country Status (6)

Country Link
US (1) US3795554A (en, 2012)
JP (1) JPS4998187A (en, 2012)
DE (1) DE2363269A1 (en, 2012)
FR (1) FR2211758B1 (en, 2012)
IT (1) IT1000547B (en, 2012)
NL (1) NL7317507A (en, 2012)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3909321A (en) * 1973-11-05 1975-09-30 Int Rectifier Corp Control of diffusion profiles in a thyristor by a grown oxide layer
JPS5299081A (en) * 1976-02-16 1977-08-19 Hitachi Ltd Production of semiconductor device
FR2514558A1 (fr) * 1981-10-13 1983-04-15 Silicium Semiconducteur Ssc Procede de fabrication de thyristor asymetrique a diode de conduction inverse par diffusion au phosphure de gallium
FR2516704B1 (fr) * 1981-11-13 1985-09-06 Thomson Csf Thyristor a faible courant de gachette immunise par rapport aux declenchements
US5225235A (en) * 1987-05-18 1993-07-06 Osaka Titanium Co., Ltd. Semiconductor wafer and manufacturing method therefor
US4925809A (en) * 1987-05-23 1990-05-15 Osaka Titanium Co., Ltd. Semiconductor wafer and epitaxial growth on the semiconductor wafer with autodoping control and manufacturing method therefor

Also Published As

Publication number Publication date
FR2211758A1 (en, 2012) 1974-07-19
US3795554A (en) 1974-03-05
FR2211758B1 (en, 2012) 1977-08-12
NL7317507A (en, 2012) 1974-06-24
DE2363269A1 (de) 1974-06-27
JPS4998187A (en, 2012) 1974-09-17

Similar Documents

Publication Publication Date Title
BE816811A (fr) Soudure amelioree entre bloc semiconducteur et substrat
CH528152A (de) Halbleiteranordnung und Verfahren zu deren Herstellung
IT950802B (it) Metodo per la formazione di un contatto intermetallico in un dispositivo semiconduttore
AU466690B2 (en) Semiconductor device and method of manufacturing the same
CA1003577A (en) Semiconductor device isolation structure and method
IT975127B (it) Procedimento per la fabbricazione di un dispositivo semiconduttore e dispositivo semiconduttore ot tenuto col procedimento
IT1020224B (it) Metodo per la diffusione di im purezze in cristalli semicondut tori di nitruri
IT976112B (it) Procedimento per la fabbricazione di dispositivi semiconduttori
IT1004927B (it) Procedimento per la diffusione del le impurezze in un semiconduttore
IT1000547B (it) Procedimento per la diffusione simultanea dei composti intermetal lici dei gruppi 3 e v in un wafer semiconduttore
IT981579B (it) Procedimento di diffusione in composti semiconduttori iii v
IT997293B (it) Procedimento e dispositivo per produrre wafers
AU473855B2 (en) Semiconductor device and method of manufacturing the device
JPS5415667A (en) Wafer large output semiconductor having syntheric substance coating
CH541880A (de) Dünnschicht-Halbleitervorrichtung und Verfahren zu deren Herstellung
IT976262B (it) Procedimento per la fabbricazione di corpi semiconduttori
IT948817B (it) Procedimento per la diffusione di un impurezza in un corpo semicon duttore
IT994704B (it) Procedimento per la fabbricazione di un dispositivo comprendente un semiconduttore
IT966758B (it) Procedimento per la manifattura di semiconduttori con esatta so vrapposizione di successive masche re di diffusione
IT964954B (it) Procedimento per la preparazione di cialde aproteiche per wafer e simili
AU475239B2 (en) Integrated semiconductor device
AU4513372A (en) Method forthe manufacturing ofa semiconductor device
SU457695A1 (ru) Способ получени -аминопропионитрила
SU424423A1 (ru) Способ получени 2-фенол-азо- -гистидина
SU430461A1 (en, 2012)