JPS4998187A - - Google Patents
Info
- Publication number
- JPS4998187A JPS4998187A JP48142965A JP14296573A JPS4998187A JP S4998187 A JPS4998187 A JP S4998187A JP 48142965 A JP48142965 A JP 48142965A JP 14296573 A JP14296573 A JP 14296573A JP S4998187 A JPS4998187 A JP S4998187A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/18—Controlling or regulating
- C30B31/185—Pattern diffusion, e.g. by using masks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S252/00—Compositions
- Y10S252/95—Doping agent source material
- Y10S252/951—Doping agent source material for vapor transport
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/914—Doping
- Y10S438/923—Diffusion through a layer
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Thyristors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US31687072A | 1972-12-20 | 1972-12-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS4998187A true JPS4998187A (en, 2012) | 1974-09-17 |
Family
ID=23231064
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP48142965A Pending JPS4998187A (en, 2012) | 1972-12-20 | 1973-12-18 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3795554A (en, 2012) |
| JP (1) | JPS4998187A (en, 2012) |
| DE (1) | DE2363269A1 (en, 2012) |
| FR (1) | FR2211758B1 (en, 2012) |
| IT (1) | IT1000547B (en, 2012) |
| NL (1) | NL7317507A (en, 2012) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5299081A (en) * | 1976-02-16 | 1977-08-19 | Hitachi Ltd | Production of semiconductor device |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3909321A (en) * | 1973-11-05 | 1975-09-30 | Int Rectifier Corp | Control of diffusion profiles in a thyristor by a grown oxide layer |
| FR2514558A1 (fr) * | 1981-10-13 | 1983-04-15 | Silicium Semiconducteur Ssc | Procede de fabrication de thyristor asymetrique a diode de conduction inverse par diffusion au phosphure de gallium |
| FR2516704B1 (fr) * | 1981-11-13 | 1985-09-06 | Thomson Csf | Thyristor a faible courant de gachette immunise par rapport aux declenchements |
| US5225235A (en) * | 1987-05-18 | 1993-07-06 | Osaka Titanium Co., Ltd. | Semiconductor wafer and manufacturing method therefor |
| US4925809A (en) * | 1987-05-23 | 1990-05-15 | Osaka Titanium Co., Ltd. | Semiconductor wafer and epitaxial growth on the semiconductor wafer with autodoping control and manufacturing method therefor |
-
1972
- 1972-12-20 US US00316870A patent/US3795554A/en not_active Expired - Lifetime
-
1973
- 1973-12-18 IT IT70740/73A patent/IT1000547B/it active
- 1973-12-18 JP JP48142965A patent/JPS4998187A/ja active Pending
- 1973-12-19 FR FR7345554A patent/FR2211758B1/fr not_active Expired
- 1973-12-19 DE DE19732363269 patent/DE2363269A1/de active Pending
- 1973-12-20 NL NL7317507A patent/NL7317507A/xx unknown
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5299081A (en) * | 1976-02-16 | 1977-08-19 | Hitachi Ltd | Production of semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| IT1000547B (it) | 1976-04-10 |
| FR2211758A1 (en, 2012) | 1974-07-19 |
| US3795554A (en) | 1974-03-05 |
| FR2211758B1 (en, 2012) | 1977-08-12 |
| NL7317507A (en, 2012) | 1974-06-24 |
| DE2363269A1 (de) | 1974-06-27 |