IN2014MU01589A - - Google Patents

Info

Publication number
IN2014MU01589A
IN2014MU01589A IN1589MU2014A IN2014MU01589A IN 2014MU01589 A IN2014MU01589 A IN 2014MU01589A IN 1589MU2014 A IN1589MU2014 A IN 1589MU2014A IN 2014MU01589 A IN2014MU01589 A IN 2014MU01589A
Authority
IN
India
Application number
Other languages
English (en)
Inventor
Goebl Christian
Original Assignee
Semikron Elektronik Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semikron Elektronik Gmbh filed Critical Semikron Elektronik Gmbh
Publication of IN2014MU01589A publication Critical patent/IN2014MU01589A/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367Cooling facilitated by shape of device
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/71Means for bonding not being attached to, or not being formed on, the surface to be connected
    • H01L24/72Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • H01L23/433Auxiliary members in containers characterised by their shape, e.g. pistons
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/71Means for bonding not being attached to, or not being formed on, the surface to be connected
    • H01L2224/72Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/4985Flexible insulating substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1305Bipolar Junction Transistor [BJT]
    • H01L2924/13055Insulated gate bipolar transistor [IGBT]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1306Field-effect transistor [FET]
    • H01L2924/13091Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Inverter Devices (AREA)
  • Dc-Dc Converters (AREA)
IN1589MU2014 2013-05-14 2014-05-07 IN2014MU01589A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102013104949.4A DE102013104949B3 (de) 2013-05-14 2013-05-14 Leistungselektronische Schalteinrichtung und Anordnung hiermit

Publications (1)

Publication Number Publication Date
IN2014MU01589A true IN2014MU01589A (zh) 2015-09-04

Family

ID=50382203

Family Applications (1)

Application Number Title Priority Date Filing Date
IN1589MU2014 IN2014MU01589A (zh) 2013-05-14 2014-05-07

Country Status (7)

Country Link
US (1) US9530712B2 (zh)
EP (1) EP2804210A1 (zh)
JP (1) JP6326280B2 (zh)
KR (1) KR102214418B1 (zh)
CN (1) CN104157622B (zh)
DE (1) DE102013104949B3 (zh)
IN (1) IN2014MU01589A (zh)

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DE102013104949B3 (de) * 2013-05-14 2014-04-24 Semikron Elektronik Gmbh & Co. Kg Leistungselektronische Schalteinrichtung und Anordnung hiermit
US9437589B2 (en) * 2014-03-25 2016-09-06 Infineon Technologies Ag Protection devices
DE102014106570B4 (de) 2014-05-09 2016-03-31 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitermodul mit Schalteinrichtung und Anordnung hiermit
DE102014115565B3 (de) * 2014-10-27 2015-10-22 Semikron Elektronik Gmbh & Co. Kg Verfahren zur Herstellung einer Schalteinrichtung mit einer feuchtigkeitsdichten und elektrisch isolierenden Abdeckung und zur Herstellung einer Anordnung hiermit
DE102015111204B4 (de) * 2015-07-10 2019-03-07 Semikron Elektronik Gmbh & Co. Kg Leistungselektronisches Modul mit Lastanschlusselementen
DE102015114188B4 (de) 2015-08-26 2019-03-07 Semikron Elektronik Gmbh & Co. Kg Leistungselektronisches Submodul mit einem zweiteiligen Gehäuse
DE102015114191B3 (de) * 2015-08-26 2016-11-03 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitermodul mit einer Mehrzahl von Submodulen und mit einer Druckeinrichtung und Anordnung hiermit
DE102015115611A1 (de) * 2015-09-16 2017-03-16 Karlsruher Institut für Technologie Verfahren zum Herstellen von elektronischen Modulen
DE102015116165A1 (de) * 2015-09-24 2017-03-30 Semikron Elektronik Gmbh & Co. Kg Verfahren zur Herstellung einer leistungselektronischen Schalteinrichtung und leistungselektronische Schalteinrichtung
DE102015120157A1 (de) * 2015-11-20 2017-05-24 Semikron Elektronik Gmbh & Co. Kg Leistungselektronische Schalteinrichtung mit einer Mehrzahl von Potentialflächen
DE102016119631B4 (de) * 2016-02-01 2021-11-18 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitermodul mit einem Druckeinleitkörper und Anordnung hiermit
DE102016110912B4 (de) * 2016-06-14 2018-03-08 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitermodul mit einer Schalteinrichtung
DE102016112777B4 (de) * 2016-07-12 2021-03-18 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitereinrichtung
EP3273470A1 (de) 2016-07-22 2018-01-24 SEMIKRON Elektronik GmbH & Co. KG Leistungselektronische schalteinrichtung, anordnung hiermit und verfahren zur herstellung der schalteinrichtung
EP3273473B1 (de) 2016-07-22 2020-09-09 SEMIKRON Elektronik GmbH & Co. KG Leistungselektronische schalteinrichtung, anordnung hiermit und verfahren zur herstellung der schalteinrichtung
EP3273474A1 (de) 2016-07-22 2018-01-24 SEMIKRON Elektronik GmbH & Co. KG Leistungselektronische schalteinrichtung, anordnung hiermit und verfahren zur herstellung der schalteinrichtung
DE102016123113B3 (de) * 2016-11-30 2017-11-09 Semikron Elektronik Gmbh & Co. Kg Druckeinrichtung für eine leistungselektronische Schalteinrichtung, Schalteinrichtung und Anordnung hiermit
DE102016123697B4 (de) * 2016-12-07 2021-06-24 Semikron Elektronik Gmbh & Co. Kg Druckeinrichtung für eine leistungselektronische Schalteinrichtung, Schalteinrichtung und Anordnung hiermit
DE102017100328B4 (de) * 2017-01-10 2020-03-19 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitermodul mit einem Leistungshalbleiterbauelement
DE102017117667B4 (de) * 2017-08-03 2021-11-18 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitermodul mit einer auf eine Schalteinrichtung einwirkenden Druckeinrichtung
FR3091013B1 (fr) * 2018-12-21 2021-01-15 Valeo Siemens Eautomotive France Sas Organe de plaquage, ensemble et équipement électrique
JP7099385B2 (ja) * 2019-03-28 2022-07-12 株式会社デンソー 加圧部材
DE102019113762B4 (de) * 2019-05-23 2022-04-14 Semikron Elektronik Gmbh & Co. Kg Verfahren zur Herstellung eines Leistungshalbleitermoduls
DE102019209069A1 (de) * 2019-06-24 2020-12-24 Siemens Aktiengesellschaft Befestigung von Leistungshalbleiterbauelementen auf gekrümmten Oberflächen
DE102019126623B4 (de) 2019-10-02 2024-03-14 Semikron Elektronik Gmbh & Co. Kg Patentabteilung Leistungselektronische Schalteinrichtung mit einer Vergussmasse
GB2579467B (en) * 2020-01-24 2021-01-13 First Light Fusion Ltd Electrical switching arrangement
DE102020121033A1 (de) * 2020-08-10 2022-02-10 Semikron Elektronik Gmbh & Co. Kg Leistungselektronische Schalteinrichtung, Leistungshalbleitermodul damit und Verfahren zur Herstellung
DE102022101511A1 (de) 2022-01-24 2023-07-27 Semikron Elektronik Gmbh & Co. Kg Leistung-Schalteinrichtung mit optimierter Druckplatte

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DE102014106570B4 (de) * 2014-05-09 2016-03-31 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitermodul mit Schalteinrichtung und Anordnung hiermit

Also Published As

Publication number Publication date
DE102013104949B3 (de) 2014-04-24
JP6326280B2 (ja) 2018-05-16
CN104157622B (zh) 2018-04-13
US9530712B2 (en) 2016-12-27
EP2804210A1 (de) 2014-11-19
KR20140134628A (ko) 2014-11-24
JP2014225664A (ja) 2014-12-04
CN104157622A (zh) 2014-11-19
KR102214418B1 (ko) 2021-02-08
US20150069599A1 (en) 2015-03-12

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