IN2014DN03024A - - Google Patents

Info

Publication number
IN2014DN03024A
IN2014DN03024A IN3024DEN2014A IN2014DN03024A IN 2014DN03024 A IN2014DN03024 A IN 2014DN03024A IN 3024DEN2014 A IN3024DEN2014 A IN 3024DEN2014A IN 2014DN03024 A IN2014DN03024 A IN 2014DN03024A
Authority
IN
India
Prior art keywords
overvoltage
igbt
turn
slope
techniques
Prior art date
Application number
Other languages
English (en)
Inventor
Jean Marc Cyr
Yacoubi Maalainine El
Mohammed Amar
Pascal Fleury
Original Assignee
Tm4 Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tm4 Inc filed Critical Tm4 Inc
Publication of IN2014DN03024A publication Critical patent/IN2014DN03024A/en

Links

Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/42—Conversion of DC power input into AC power output without possibility of reversal
    • H02M7/44—Conversion of DC power input into AC power output without possibility of reversal by static converters
    • H02M7/48—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/53—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/537—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/32—Means for protecting converters other than automatic disconnection
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0828—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in composite switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/165—Modifications for eliminating interference voltages or currents in field-effect transistor switches by feedback from the output circuit to the control circuit
    • H03K17/166—Soft switching
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/0003—Details of control, feedback or regulation circuits
    • H02M1/0029—Circuits or arrangements for limiting the slope of switching signals, e.g. slew rate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires
    • H10W72/5475—Dispositions of multiple bond wires multiple bond wires connected to common bond pads at both ends of the wires

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Power Conversion In General (AREA)
  • Electronic Switches (AREA)
  • Inverter Devices (AREA)
IN3024DEN2014 2011-12-07 2012-12-05 IN2014DN03024A (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161567800P 2011-12-07 2011-12-07
PCT/CA2012/001125 WO2013082705A1 (en) 2011-12-07 2012-12-05 Turn-off overvoltage limiting for igbt

Publications (1)

Publication Number Publication Date
IN2014DN03024A true IN2014DN03024A (https=) 2015-05-08

Family

ID=48573450

Family Applications (1)

Application Number Title Priority Date Filing Date
IN3024DEN2014 IN2014DN03024A (https=) 2011-12-07 2012-12-05

Country Status (8)

Country Link
US (2) US9608543B2 (https=)
EP (1) EP2789092B1 (https=)
JP (1) JP6239525B2 (https=)
CN (1) CN103988410B (https=)
BR (1) BR112014012206A2 (https=)
CA (1) CA2851376C (https=)
IN (1) IN2014DN03024A (https=)
WO (1) WO2013082705A1 (https=)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IN2014DN03024A (https=) * 2011-12-07 2015-05-08 Tm4 Inc
US9112501B2 (en) 2012-09-29 2015-08-18 Infineon Technologies Ag Electronic circuit with an electronic switch and a monitoring circuit
CA2907472C (en) 2013-04-04 2017-05-02 Tm4 Inc. Commutation cell and compensation circuit therefor
KR20160079807A (ko) * 2013-11-01 2016-07-06 티엠4 인코포레이티드 스위칭 과전압을 제한하는 구성의 전력 변환기
CN105814780B (zh) * 2013-11-14 2019-03-12 Tm4股份有限公司 控制功率电子开关的接通和关断的补偿电路、整流单元和功率转换器
US9882465B2 (en) * 2013-11-14 2018-01-30 Tm4 Inc. Commutation cell, power converter and compensation circuit having dynamically controlled voltage gains
US10277112B2 (en) * 2015-06-23 2019-04-30 Tm4, Inc. Physical topology for a power converter
US9812941B2 (en) 2015-09-11 2017-11-07 Nxp Usa, Inc. High power driver having multiple turn off modes
WO2017045071A1 (en) * 2015-09-14 2017-03-23 Tm4 Inc. Power converter configured for limiting switching overvoltage
CN107154791A (zh) * 2016-03-02 2017-09-12 国网辽宁省电力有限公司电力科学研究院 高压大功率igbt模块的电流上升斜率检测电路及其检测方法
US10122294B2 (en) 2016-12-01 2018-11-06 Ford Global Technologies, Llc Active gate clamping for inverter switching devices with enhanced common source inductance
US9866099B1 (en) * 2016-12-30 2018-01-09 Texas Instruments Incorporated Adaptive high-side gate drive for ringing mitigation in switching power converters
JP7341885B2 (ja) * 2019-12-27 2023-09-11 川崎重工業株式会社 スイッチング回路
JP7471509B2 (ja) * 2021-03-19 2024-04-19 三菱電機株式会社 直流電源装置、冷凍サイクル装置、空気調和機および冷蔵庫
WO2023001995A1 (fr) * 2021-07-21 2023-01-26 Valeo Systemes De Controle Moteur Systeme de commutation et convertisseur de tension ou engin de mobilite comprenant un tel systeme de commutation
US12531554B2 (en) 2023-02-27 2026-01-20 Rtx Corporation Enhanced solid state circuit breaker structure

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3379556B2 (ja) * 1993-12-30 2003-02-24 サンケン電気株式会社 スイッチング素子を有する回路装置
KR100337035B1 (ko) * 1999-11-26 2002-05-16 권영한 전력용 반도체 스위칭 소자의 직렬구동을 위한 수동형보조회로
JP3598933B2 (ja) 2000-02-28 2004-12-08 株式会社日立製作所 電力変換装置
JP3932841B2 (ja) * 2001-08-29 2007-06-20 株式会社日立製作所 半導体電力変換装置
JP3731562B2 (ja) * 2002-05-22 2006-01-05 日産自動車株式会社 電流制御型素子用駆動回路
DE10231198A1 (de) * 2002-07-10 2004-01-29 eupec Europäische Gesellschaft für Leistungshalbleiter mbH Verfahren und Schaltungsanordnung zum Begrenzen einer Überspannung
JP3975162B2 (ja) * 2002-12-20 2007-09-12 トヨタ自動車株式会社 インバータ装置およびそれを用いた電動機一体インバータ装置
JP4739059B2 (ja) 2006-02-23 2011-08-03 ルネサスエレクトロニクス株式会社 Ｄｃ／ｄｃコンバータ用半導体装置
JP4432953B2 (ja) 2006-09-27 2010-03-17 株式会社日立製作所 半導体電力変換装置
WO2010134276A1 (ja) * 2009-05-19 2010-11-25 三菱電機株式会社 ゲート駆動回路
US8149600B2 (en) 2009-05-22 2012-04-03 Infineon Technologies Ag System and method for ringing suppression in a switched mode power supply
JP5315155B2 (ja) * 2009-07-23 2013-10-16 日立オートモティブシステムズ株式会社 半導体素子制御装置、車載用電機システム
EP2526616A2 (en) 2010-01-22 2012-11-28 Massachusetts Institute of Technology Grid-tied power conversion circuits and related techniques
KR101449083B1 (ko) * 2010-05-06 2014-10-13 엘에스산전 주식회사 스위칭 게이트 드라이브
US9793889B2 (en) * 2011-03-15 2017-10-17 Infineon Technologies Ag Semiconductor device including a circuit to compensate for parasitic inductance
IN2014DN03024A (https=) * 2011-12-07 2015-05-08 Tm4 Inc
US9438228B2 (en) * 2012-03-12 2016-09-06 Board Of Trustees Of Michigan State University High efficiency gate drive circuit for power transistors
CN104756390B (zh) * 2012-09-24 2018-03-16 Tm4股份有限公司 用于受控电源开关模块的拓扑
CA2907472C (en) * 2013-04-04 2017-05-02 Tm4 Inc. Commutation cell and compensation circuit therefor
KR20160079807A (ko) * 2013-11-01 2016-07-06 티엠4 인코포레이티드 스위칭 과전압을 제한하는 구성의 전력 변환기
US9882465B2 (en) * 2013-11-14 2018-01-30 Tm4 Inc. Commutation cell, power converter and compensation circuit having dynamically controlled voltage gains
CN105814780B (zh) * 2013-11-14 2019-03-12 Tm4股份有限公司 控制功率电子开关的接通和关断的补偿电路、整流单元和功率转换器
AU2013407019B2 (en) * 2013-12-03 2018-01-04 Ingeteam Power Technology, S.A. Control system and control method for controlling a switching device integrated in an electronic converter and switching cell comprising said system

Also Published As

Publication number Publication date
EP2789092A1 (en) 2014-10-15
US20140321178A1 (en) 2014-10-30
EP2789092A4 (en) 2016-05-04
US9608543B2 (en) 2017-03-28
JP2015503319A (ja) 2015-01-29
BR112014012206A2 (pt) 2017-05-30
WO2013082705A1 (en) 2013-06-13
EP2789092B1 (en) 2020-02-05
US10205405B2 (en) 2019-02-12
JP6239525B2 (ja) 2017-11-29
CA2851376C (en) 2021-02-16
US20170163172A1 (en) 2017-06-08
CN103988410A (zh) 2014-08-13
CA2851376A1 (en) 2013-06-13
CN103988410B (zh) 2017-10-13

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