IN2014DN03024A - - Google Patents

Info

Publication number
IN2014DN03024A
IN2014DN03024A IN3024DEN2014A IN2014DN03024A IN 2014DN03024 A IN2014DN03024 A IN 2014DN03024A IN 3024DEN2014 A IN3024DEN2014 A IN 3024DEN2014A IN 2014DN03024 A IN2014DN03024 A IN 2014DN03024A
Authority
IN
India
Prior art keywords
overvoltage
igbt
turn
slope
techniques
Prior art date
Application number
Other languages
English (en)
Inventor
Jean Marc Cyr
Yacoubi Maalainine El
Mohammed Amar
Pascal Fleury
Original Assignee
Tm4 Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tm4 Inc filed Critical Tm4 Inc
Publication of IN2014DN03024A publication Critical patent/IN2014DN03024A/en

Links

Classifications

    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/42Conversion of DC power input into AC power output without possibility of reversal
    • H02M7/44Conversion of DC power input into AC power output without possibility of reversal by static converters
    • H02M7/48Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/53Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/537Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00Details of apparatus for conversion
    • H02M1/08Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00Details of apparatus for conversion
    • H02M1/32Means for protecting converters other than automatic disconnection
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0828Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in composite switches
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16Modifications for eliminating interference voltages or currents
    • H03K17/161Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/165Modifications for eliminating interference voltages or currents in field-effect transistor switches by feedback from the output circuit to the control circuit
    • H03K17/166Soft switching
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00Details of apparatus for conversion
    • H02M1/0003Details of control, feedback or regulation circuits
    • H02M1/0029Circuits or arrangements for limiting the slope of switching signals, e.g. slew rate
    • H10W72/5475

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Power Conversion In General (AREA)
  • Electronic Switches (AREA)
  • Inverter Devices (AREA)
IN3024DEN2014 2011-12-07 2012-12-05 IN2014DN03024A (cg-RX-API-DMAC10.html)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161567800P 2011-12-07 2011-12-07
PCT/CA2012/001125 WO2013082705A1 (en) 2011-12-07 2012-12-05 Turn-off overvoltage limiting for igbt

Publications (1)

Publication Number Publication Date
IN2014DN03024A true IN2014DN03024A (cg-RX-API-DMAC10.html) 2015-05-08

Family

ID=48573450

Family Applications (1)

Application Number Title Priority Date Filing Date
IN3024DEN2014 IN2014DN03024A (cg-RX-API-DMAC10.html) 2011-12-07 2012-12-05

Country Status (8)

Country Link
US (2) US9608543B2 (cg-RX-API-DMAC10.html)
EP (1) EP2789092B1 (cg-RX-API-DMAC10.html)
JP (1) JP6239525B2 (cg-RX-API-DMAC10.html)
CN (1) CN103988410B (cg-RX-API-DMAC10.html)
BR (1) BR112014012206A2 (cg-RX-API-DMAC10.html)
CA (1) CA2851376C (cg-RX-API-DMAC10.html)
IN (1) IN2014DN03024A (cg-RX-API-DMAC10.html)
WO (1) WO2013082705A1 (cg-RX-API-DMAC10.html)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9608543B2 (en) * 2011-12-07 2017-03-28 Tm4 Inc. Turn-off overvoltage limiting for IGBT
US9112501B2 (en) 2012-09-29 2015-08-18 Infineon Technologies Ag Electronic circuit with an electronic switch and a monitoring circuit
CN105308864B (zh) 2013-04-04 2020-10-16 Tm4股份有限公司 整流单元及其补偿电路
KR20160079807A (ko) * 2013-11-01 2016-07-06 티엠4 인코포레이티드 스위칭 과전압을 제한하는 구성의 전력 변환기
CA2930188A1 (en) 2013-11-14 2015-05-21 Tm4 Inc. Compensation circuit, commutation cell and power converter controlling turn-on and turn-off of a power electronic switch
CA2930187A1 (en) * 2013-11-14 2015-05-21 Tm4 Inc. Commutation cell, power converter and compensation circuit having dynamically controlled voltage gains
HK1252919A1 (zh) * 2015-06-23 2019-06-06 Tm4股份有限公司 功率转换器的物理拓扑结构
US9812941B2 (en) 2015-09-11 2017-11-07 Nxp Usa, Inc. High power driver having multiple turn off modes
CN108141129B (zh) * 2015-09-14 2020-07-14 Tm4股份有限公司 配置为限制开关过电压的电力转换器
CN107154791A (zh) * 2016-03-02 2017-09-12 国网辽宁省电力有限公司电力科学研究院 高压大功率igbt模块的电流上升斜率检测电路及其检测方法
US10122294B2 (en) 2016-12-01 2018-11-06 Ford Global Technologies, Llc Active gate clamping for inverter switching devices with enhanced common source inductance
US9866099B1 (en) * 2016-12-30 2018-01-09 Texas Instruments Incorporated Adaptive high-side gate drive for ringing mitigation in switching power converters
JP7341885B2 (ja) * 2019-12-27 2023-09-11 川崎重工業株式会社 スイッチング回路
DE112021007336T5 (de) * 2021-03-19 2023-12-28 Mitsubishi Electric Corporation Gleichstromversorgung, Kältekreislaufvorrichtung, Klimatisierungsvorrichtung und Kühlvorrichtung
WO2023001995A1 (fr) * 2021-07-21 2023-01-26 Valeo Systemes De Controle Moteur Systeme de commutation et convertisseur de tension ou engin de mobilite comprenant un tel systeme de commutation
US12531554B2 (en) 2023-02-27 2026-01-20 Rtx Corporation Enhanced solid state circuit breaker structure

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3379556B2 (ja) * 1993-12-30 2003-02-24 サンケン電気株式会社 スイッチング素子を有する回路装置
KR100337035B1 (ko) 1999-11-26 2002-05-16 권영한 전력용 반도체 스위칭 소자의 직렬구동을 위한 수동형보조회로
JP3598933B2 (ja) 2000-02-28 2004-12-08 株式会社日立製作所 電力変換装置
JP3932841B2 (ja) * 2001-08-29 2007-06-20 株式会社日立製作所 半導体電力変換装置
JP3731562B2 (ja) * 2002-05-22 2006-01-05 日産自動車株式会社 電流制御型素子用駆動回路
DE10231198A1 (de) * 2002-07-10 2004-01-29 eupec Europäische Gesellschaft für Leistungshalbleiter mbH Verfahren und Schaltungsanordnung zum Begrenzen einer Überspannung
JP3975162B2 (ja) * 2002-12-20 2007-09-12 トヨタ自動車株式会社 インバータ装置およびそれを用いた電動機一体インバータ装置
JP4739059B2 (ja) 2006-02-23 2011-08-03 ルネサスエレクトロニクス株式会社 Dc/dcコンバータ用半導体装置
JP4432953B2 (ja) 2006-09-27 2010-03-17 株式会社日立製作所 半導体電力変換装置
CN102428634B (zh) * 2009-05-19 2014-09-17 三菱电机株式会社 栅极驱动电路
US8149600B2 (en) 2009-05-22 2012-04-03 Infineon Technologies Ag System and method for ringing suppression in a switched mode power supply
JP5315155B2 (ja) * 2009-07-23 2013-10-16 日立オートモティブシステムズ株式会社 半導体素子制御装置、車載用電機システム
US8670254B2 (en) 2010-01-22 2014-03-11 Massachusetts Institute Of Technology Grid-tied power conversion circuits and related techniques
KR101449083B1 (ko) * 2010-05-06 2014-10-13 엘에스산전 주식회사 스위칭 게이트 드라이브
US9793889B2 (en) * 2011-03-15 2017-10-17 Infineon Technologies Ag Semiconductor device including a circuit to compensate for parasitic inductance
US9608543B2 (en) * 2011-12-07 2017-03-28 Tm4 Inc. Turn-off overvoltage limiting for IGBT
US9438228B2 (en) * 2012-03-12 2016-09-06 Board Of Trustees Of Michigan State University High efficiency gate drive circuit for power transistors
WO2014043795A1 (en) * 2012-09-24 2014-03-27 Tm4 Inc. Topology for controlled power switch module
CN105308864B (zh) * 2013-04-04 2020-10-16 Tm4股份有限公司 整流单元及其补偿电路
KR20160079807A (ko) * 2013-11-01 2016-07-06 티엠4 인코포레이티드 스위칭 과전압을 제한하는 구성의 전력 변환기
CA2930187A1 (en) * 2013-11-14 2015-05-21 Tm4 Inc. Commutation cell, power converter and compensation circuit having dynamically controlled voltage gains
CA2930188A1 (en) * 2013-11-14 2015-05-21 Tm4 Inc. Compensation circuit, commutation cell and power converter controlling turn-on and turn-off of a power electronic switch
BR112016012503B1 (pt) * 2013-12-03 2021-10-19 Ingeteam Power Technology, S.A. Sistema de controle de um dispositivo de comutação integrado em um conversor eletrônico, célula de comutação para um conversor eletrônico, instalação fotovoltaica, e método de controle de um dispositivo de comutação integrado em um conversor eletrônico

Also Published As

Publication number Publication date
US20170163172A1 (en) 2017-06-08
EP2789092A4 (en) 2016-05-04
WO2013082705A1 (en) 2013-06-13
CN103988410A (zh) 2014-08-13
CA2851376C (en) 2021-02-16
US20140321178A1 (en) 2014-10-30
EP2789092A1 (en) 2014-10-15
US10205405B2 (en) 2019-02-12
BR112014012206A2 (pt) 2017-05-30
CA2851376A1 (en) 2013-06-13
JP2015503319A (ja) 2015-01-29
EP2789092B1 (en) 2020-02-05
US9608543B2 (en) 2017-03-28
JP6239525B2 (ja) 2017-11-29
CN103988410B (zh) 2017-10-13

Similar Documents

Publication Publication Date Title
IN2014DN03024A (cg-RX-API-DMAC10.html)
GB2505854B (en) Insulated gate bipolar transistor
WO2012171938A3 (en) Power transistor gate driver
GB2506075B (en) Insulated gate bipolar transistor
GB2505282A (en) Mosfet switch gate driver, mosfet switch system and method
EP3084835A4 (en) Techniques for improving gate control over transistor channel by increasing effective gate length
EP3051108A4 (en) Drive device for fuel injection device
IT1400266B1 (it) Circuito integrato di controllo per un transistor di potenza di un regolatore di corrente a commutazione.
IN2015MN00129A (cg-RX-API-DMAC10.html)
GB2513748B (en) Power conservation by way of memory channel shutdown
EP2751635A4 (en) DELAY BLOCK FOR CONTROLLING DEAD TIME OF A CONTACTED VOLTAGE REGULATOR
EP3055885A4 (en) Normally-off iii-nitride transistors with high threshold-voltage and low on-resistance
WO2012118899A3 (en) Offset electrode tft structure
EP2613044A4 (en) Drive device for fuel injection device
EP2525410A4 (en) ISOLATED GRID BIPOLAR TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
EP3017542A4 (en) A gate drive circuit and a method for controlling a power transistor
GB201109348D0 (en) Motor control with voltage harmonic shaping
EP3002781A4 (en) Manufacturing method for reverse conducting insulated gate bipolar transistor
EP3082168A4 (en) Insulated gate bipolar transistor and production method therefor
EP3049887A4 (en) Improved power control techniques for integrated pcie controllers
GB2505599A (en) Magnetic tunnel junction transistor devices
EP3026695A4 (en) Method for manufacturing injection-enhanced insulated-gate bipolar transistor
TWI560537B (en) Controller for adjusting an output voltage of a power converter
EP2475099A3 (en) Limiting current circuit that has output short circuit protection
WO2012149184A3 (en) Dmos transistor with cavity below drift region