IN2014CN04758A - - Google Patents
Info
- Publication number
- IN2014CN04758A IN2014CN04758A IN4758CHN2014A IN2014CN04758A IN 2014CN04758 A IN2014CN04758 A IN 2014CN04758A IN 4758CHN2014 A IN4758CHN2014 A IN 4758CHN2014A IN 2014CN04758 A IN2014CN04758 A IN 2014CN04758A
- Authority
- IN
- India
- Prior art keywords
- segments
- anode
- cathode
- radiation
- electrode
- Prior art date
Links
- 230000005855 radiation Effects 0.000 abstract 5
- 239000004065 semiconductor Substances 0.000 abstract 3
- 230000008878 coupling Effects 0.000 abstract 1
- 238000010168 coupling process Methods 0.000 abstract 1
- 238000005859 coupling reaction Methods 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
- G01T1/241—Electrode arrangements, e.g. continuous or parallel strips or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
- H01L27/14605—Structural or functional details relating to the position of the pixel elements, e.g. smaller pixel elements in the center of the imager compared to pixel elements at the periphery
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
- H01L27/14659—Direct radiation imagers structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14638—Structures specially adapted for transferring the charges across the imager perpendicular to the imaging plane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
- H01L27/14676—X-ray, gamma-ray or corpuscular radiation imagers
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- High Energy & Nuclear Physics (AREA)
- Molecular Biology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Toxicology (AREA)
- Measurement Of Radiation (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201161569833P | 2011-12-13 | 2011-12-13 | |
| PCT/IB2012/057212 WO2013088352A2 (en) | 2011-12-13 | 2012-12-12 | Radiation detector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IN2014CN04758A true IN2014CN04758A (ja) | 2015-09-18 |
Family
ID=47624380
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IN4758CHN2014 IN2014CN04758A (ja) | 2011-12-13 | 2012-12-12 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US20140319363A1 (ja) |
| EP (1) | EP2748639B1 (ja) |
| JP (1) | JP6235480B2 (ja) |
| CN (1) | CN104024889A (ja) |
| BR (1) | BR112014014064A2 (ja) |
| IN (1) | IN2014CN04758A (ja) |
| RU (1) | RU2014128555A (ja) |
| WO (1) | WO2013088352A2 (ja) |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6186205B2 (ja) * | 2013-08-15 | 2017-08-23 | ソニーセミコンダクタソリューションズ株式会社 | 撮像素子および撮像装置 |
| EP2876465A1 (en) * | 2013-11-26 | 2015-05-27 | Danmarks Tekniske Universitet (DTU) | X-ray and gamma-ray radiation detector |
| AT515501B1 (de) * | 2014-02-18 | 2016-01-15 | Griesmayer Erich Dr | Verfahren und Vorrichtung zum Erfassen und zum Unterscheiden von Elementarteilchen |
| DE102014207324A1 (de) * | 2014-04-16 | 2015-10-22 | Siemens Aktiengesellschaft | Direktkonvertierender Röntgenstrahlungsdetektor und CT-System |
| WO2016087423A1 (en) * | 2014-12-05 | 2016-06-09 | Koninklijke Philips N.V. | X-ray detector device for inclined angle x-ray radiation |
| JP6505228B2 (ja) * | 2014-12-17 | 2019-04-24 | コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． | 電離放射線を検出する検出器、撮像装置、非一時的コンピュータ可読媒体、及び方法 |
| KR20170097748A (ko) * | 2014-12-19 | 2017-08-28 | 쥐-레이 스위츨란드 에스에이 | 모놀리식 cmos 통합된 픽셀 검출기와, 다양한 적용예를 포함하는 입자 검출 및 이미지화를 위한 시스템 및 방법 |
| US9482764B1 (en) * | 2015-05-28 | 2016-11-01 | General Electric Company | Systems and methods for charge-sharing identification and correction using a single pixel |
| JP6808317B2 (ja) * | 2015-12-04 | 2021-01-06 | キヤノン株式会社 | 撮像装置、および、撮像システム |
| JP6808316B2 (ja) * | 2015-12-04 | 2021-01-06 | キヤノン株式会社 | 撮像装置、および、撮像システム |
| CN105540526B (zh) * | 2015-12-29 | 2017-03-15 | 中国科学院电子学研究所 | 单片复合敏感电极的制造方法、基于其的敏感器件 |
| US10877168B2 (en) * | 2016-03-23 | 2020-12-29 | Koninklijke Philips N.V. | Nano-material imaging detector with an integral pixel border |
| CN105974460B (zh) * | 2016-05-11 | 2018-12-07 | 天津大学 | 可重构型x射线能谱探测方法及探测器像素单元结构 |
| CN106324649B (zh) * | 2016-08-31 | 2023-09-15 | 同方威视技术股份有限公司 | 半导体探测器 |
| EP3306353A1 (en) * | 2016-10-07 | 2018-04-11 | Danmarks Tekniske Universitet | Radiation detector |
| GB201703196D0 (en) | 2017-02-28 | 2017-04-12 | Univ Of Sussex | X-ray and gammay-ray photodiode |
| EP3422051A1 (en) * | 2017-06-28 | 2019-01-02 | Koninklijke Philips N.V. | Direct conversion radiation detection |
| EP3658960B1 (en) * | 2017-07-26 | 2022-09-07 | Shenzhen Xpectvision Technology Co., Ltd. | X-ray detector capable of managing charge sharing at its periphery |
| EP3658959A4 (en) * | 2017-07-26 | 2020-12-23 | Shenzhen Xpectvision Technology Co., Ltd. | RADIATION DETECTOR WITH INTEGRATED DEPOLARIZATION DEVICE |
| CN108267777B (zh) * | 2018-02-26 | 2023-07-07 | 张岚 | 面阵列像素探测器及中低能射线源的定向方法 |
| EP4111238A4 (en) * | 2020-02-26 | 2023-12-06 | Shenzhen Xpectvision Technology Co., Ltd. | RADIATION DETECTOR |
| US11835666B1 (en) * | 2020-07-31 | 2023-12-05 | Redlen Technologies, Inc. | Photon counting computed tomography detector with improved count rate stability and method of operating same |
| US11953452B2 (en) * | 2021-03-01 | 2024-04-09 | Redlen Technologies, Inc. | Ionizing radiation detector with reduced street width and improved count rate stability |
| JP2023055071A (ja) * | 2021-10-05 | 2023-04-17 | キヤノンメディカルシステムズ株式会社 | 検出器モジュール、ｘ線コンピュータ断層撮影装置及びｘ線検出装置 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6046454A (en) | 1995-10-13 | 2000-04-04 | Digirad Corporation | Semiconductor radiation detector with enhanced charge collection |
| US5677539A (en) * | 1995-10-13 | 1997-10-14 | Digirad | Semiconductor radiation detector with enhanced charge collection |
| DE19616545B4 (de) * | 1996-04-25 | 2006-05-11 | Siemens Ag | Schneller Strahlungsdetektor |
| SE514472C2 (sv) * | 1999-04-14 | 2001-02-26 | Xcounter Ab | Strålningsdetektor och en anordning för användning vid radiografi |
| JP3900992B2 (ja) * | 2002-04-02 | 2007-04-04 | 株式会社日立製作所 | 放射線検出器及び放射線検査装置 |
| US7145986B2 (en) * | 2004-05-04 | 2006-12-05 | General Electric Company | Solid state X-ray detector with improved spatial resolution |
| JP4881071B2 (ja) * | 2006-05-30 | 2012-02-22 | 株式会社日立製作所 | 放射線検出器、及びこれを搭載した放射線撮像装置 |
| DE102007055676A1 (de) * | 2007-11-21 | 2009-06-04 | Siemens Ag | Strahlungswandler, Strahlungsdetektor und Strahlungserfassungseinrichtung |
| JP5155808B2 (ja) * | 2008-10-08 | 2013-03-06 | 株式会社日立製作所 | 半導体放射線検出器および核医学診断装置 |
| WO2010073189A1 (en) * | 2008-12-22 | 2010-07-01 | Koninklijke Philips Electronics N.V. | Radiation detector with improved charge collection and minimized leakage currents |
| NL1037989C2 (en) * | 2010-05-28 | 2011-11-29 | Photonis France Sas | An electron multiplying structure for use in a vacuum tube using electron multiplying as well as a vacuum tube using electron multiplying provided with such an electron multiplying structure. |
-
2012
- 2012-12-12 JP JP2014546707A patent/JP6235480B2/ja not_active Expired - Fee Related
- 2012-12-12 RU RU2014128555A patent/RU2014128555A/ru not_active Application Discontinuation
- 2012-12-12 IN IN4758CHN2014 patent/IN2014CN04758A/en unknown
- 2012-12-12 BR BR112014014064A patent/BR112014014064A2/pt not_active IP Right Cessation
- 2012-12-12 WO PCT/IB2012/057212 patent/WO2013088352A2/en active Application Filing
- 2012-12-12 CN CN201280061619.2A patent/CN104024889A/zh active Pending
- 2012-12-12 US US14/362,139 patent/US20140319363A1/en not_active Abandoned
- 2012-12-12 EP EP12819019.6A patent/EP2748639B1/en not_active Not-in-force
Also Published As
| Publication number | Publication date |
|---|---|
| JP2015507841A (ja) | 2015-03-12 |
| JP6235480B2 (ja) | 2017-11-22 |
| EP2748639B1 (en) | 2019-07-17 |
| WO2013088352A3 (en) | 2013-08-08 |
| US20140319363A1 (en) | 2014-10-30 |
| WO2013088352A2 (en) | 2013-06-20 |
| CN104024889A (zh) | 2014-09-03 |
| RU2014128555A (ru) | 2016-02-10 |
| BR112014014064A2 (pt) | 2017-06-13 |
| EP2748639A2 (en) | 2014-07-02 |
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