IN2012DN03396A - - Google Patents

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Publication number
IN2012DN03396A
IN2012DN03396A IN3396DEN2012A IN2012DN03396A IN 2012DN03396 A IN2012DN03396 A IN 2012DN03396A IN 3396DEN2012 A IN3396DEN2012 A IN 3396DEN2012A IN 2012DN03396 A IN2012DN03396 A IN 2012DN03396A
Authority
IN
India
Prior art keywords
composite material
substantially increased
material comprises
temperature end
filled skutterudite
Prior art date
Application number
Other languages
English (en)
Inventor
Chen Lidong
Chen Xihong
He Lin
Huang Xiangyang
Xiong Zhen
Original Assignee
Corning Inc
Shanghai Inst Ceramics
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Corning Inc, Shanghai Inst Ceramics filed Critical Corning Inc
Publication of IN2012DN03396A publication Critical patent/IN2012DN03396A/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G51/00—Compounds of cobalt
    • C01G51/80—Compounds containing cobalt, with or without oxygen or hydrogen, and containing one or more other elements
    • C01G51/82—Compounds containing cobalt, with or without oxygen or hydrogen, and containing two or more other elements
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G51/00—Compounds of cobalt
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G15/00—Compounds of gallium, indium or thallium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/853—Thermoelectric active materials comprising inorganic compositions comprising arsenic, antimony or bismuth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/854—Thermoelectric active materials comprising inorganic compositions comprising only metals
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/50—Solid solutions
    • C01P2002/52—Solid solutions containing elements as dopants
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/80—Particles consisting of a mixture of two or more inorganic phases
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/40—Electric properties
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/778—Nanostructure within specified host or matrix material, e.g. nanocomposite films
    • Y10S977/779—Possessing nanosized particles, powders, flakes, or clusters other than simple atomic impurity doping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/778—Nanostructure within specified host or matrix material, e.g. nanocomposite films
    • Y10S977/784—Electrically conducting, semi-conducting, or semi-insulating host material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Composite Materials (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Powder Metallurgy (AREA)
  • Compositions Of Oxide Ceramics (AREA)
IN3396DEN2012 2009-09-28 2010-09-23 IN2012DN03396A (enrdf_load_stackoverflow)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN200910196619A CN102031416B (zh) 2009-09-28 2009-09-28 一种填充方钴矿基复合材料及其制备方法
PCT/US2010/049906 WO2011038055A1 (en) 2009-09-28 2010-09-23 Gasb-filled skutterudite composite material and method of preparing the same

Publications (1)

Publication Number Publication Date
IN2012DN03396A true IN2012DN03396A (enrdf_load_stackoverflow) 2015-10-23

Family

ID=43303718

Family Applications (1)

Application Number Title Priority Date Filing Date
IN3396DEN2012 IN2012DN03396A (enrdf_load_stackoverflow) 2009-09-28 2010-09-23

Country Status (7)

Country Link
US (1) US8968589B2 (enrdf_load_stackoverflow)
EP (1) EP2483205B1 (enrdf_load_stackoverflow)
JP (1) JP5680090B2 (enrdf_load_stackoverflow)
KR (1) KR20120106730A (enrdf_load_stackoverflow)
CN (1) CN102031416B (enrdf_load_stackoverflow)
IN (1) IN2012DN03396A (enrdf_load_stackoverflow)
WO (1) WO2011038055A1 (enrdf_load_stackoverflow)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102881814B (zh) * 2011-07-12 2015-11-25 中国科学院上海硅酸盐研究所 空穴补偿型方钴矿热电材料及其制备方法
CN104211024B (zh) * 2013-06-04 2016-02-10 中国科学院上海硅酸盐研究所 P型可逆相变高性能热电材料及其制备方法
KR101560455B1 (ko) * 2013-10-29 2015-10-14 희성금속 주식회사 방전 플라즈마 소결을 이용한 LCD Glass 제조용 산화물 분산 강화형 백금­로듐 합금의 제조 방법
CN104498751B (zh) * 2014-12-25 2017-01-18 中国科学院上海硅酸盐研究所 一种方钴矿热电材料的制备方法
JP6655918B2 (ja) * 2015-09-10 2020-03-04 学校法人中部大学 熱電材料
CN105936985A (zh) * 2016-06-30 2016-09-14 东华大学 一种高性能多尺寸纳米结构方钴矿材料的制备方法
JP6862937B2 (ja) * 2017-03-08 2021-04-21 株式会社豊田中央研究所 ｐ型熱電材料
KR102122573B1 (ko) 2017-03-09 2020-06-12 주식회사 엘지화학 신규한 화합물 반도체 및 그 활용
EP3742504A4 (en) * 2018-01-15 2021-10-20 Hitachi Metals, Ltd. THERMOELECTRIC CONVERSION MATERIAL, THERMOELECTRIC CONVERSION MODULE, AND PROCESS FOR MANUFACTURING THERMOELECTRIC CONVERSION MATERIAL
TWI683910B (zh) * 2018-10-18 2020-02-01 國立中山大學 熱電合金及其製作方法與熱電合金複合物
CN114497335B (zh) * 2022-01-20 2024-12-27 济南大学 一种方钴矿热电材料电极以及方钴矿热电材料与电极的连接方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5994639A (en) 1997-03-25 1999-11-30 The State Of Oregon Acting By And Through The State Board Of Higher Education On Behalf Of The University Of Oregon Thermodynamically metastable skutterudite crystalline-structured compounds
EP0874406A3 (en) 1997-04-23 2000-12-13 Matsushita Electric Industrial Co., Ltd. A co-sb based thermoelectric material and a method of producing the same
US6207888B1 (en) * 1997-10-10 2001-03-27 Marlow Industries, Inc. Semiconductor materials with skutterudite type crystal lattice structures optimized for selected thermoelectric properties and methods of preparation
CN1943052A (zh) * 2004-04-14 2007-04-04 纳幕尔杜邦公司 高性能热电材料和它们的制备方法
CN100500900C (zh) * 2006-08-29 2009-06-17 中国科学院上海硅酸盐研究所 一种碱金属原子填充锑化钴基方钴矿热电材料及其制备方法
GB0724752D0 (en) * 2007-12-19 2008-01-30 Bari Mazhar A Method for producing a thermoelectric material

Also Published As

Publication number Publication date
EP2483205B1 (en) 2016-03-30
EP2483205A1 (en) 2012-08-08
US20130043439A1 (en) 2013-02-21
CN102031416A (zh) 2011-04-27
JP5680090B2 (ja) 2015-03-04
JP2013506312A (ja) 2013-02-21
CN102031416B (zh) 2012-08-29
WO2011038055A1 (en) 2011-03-31
KR20120106730A (ko) 2012-09-26
US8968589B2 (en) 2015-03-03

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